环境友好半导体Mg<sub>2</sub>Si薄膜的研究进展 -

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环境友好半导体Mg₂Si薄膜的研究进展

贵州大学理学院,新型光电子材料与技术研究所,贵州贵阳 550025

基金项目:

国家自然科学基金资助项目(No.6076602);科技部国际合作专项资助项目(No.2008DFA52210 );贵州省信息产业厅资助项目(No.0831)

详细信息

作者简介:
赵珂杰(1983—),男,河北石家庄人,硕士,主要从事新型电子功能材料的研究。E-mail:kejie8308@163.com
谢泉(1964—),男,湖南邵阳人,教授,博士生导师,主要从事新型电子功能材料的研究。 E-mail:qxie@gzu.edu.cn

中图分类号:TN304.2; TN304.055
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出版历程
- 收稿日期:2010-03-11
- 修回日期:2010-05-13
- 刊出日期:2010-10-25

Study on semiconductor Mg₂Si thin films

Institute of Advanced Optoelectronic Materials and Technology, College of Science,Guizhou University,Guiyang 550025,China

摘要

摘要:介绍了近年来Mg2Si薄膜的研究进展。从Mg2Si材料的晶体结构出发,重点对Mg2Si薄膜的基本性质、制备方法和应用前景进行了论述。研究表明,Mg2Si是一种窄带隙间接半导体材料,在光电和热电领域都具有较好的应用价值,因其兼具了组成元素地层含量丰富、无毒、无污染等优点,被视为是一种新型的环境友好半导体材料。在Mg2Si薄膜的外延生长技术方面,目前比较成熟的方法有分子束外延、脉冲沉积、反应扩散等多种,但普遍存在制备条件较苛刻,成膜质量不高等缺点。最后,对目前存在的问题及未来的研究动向做了简要讨论。
- Mg2Si/
- 半导体薄膜/
- 材料制备
Abstract:Recent developments of Mg2Si films are reviewed. On the basis of the crystal structure of Mg2Si, the basic properties, preparation methods, and application prospects of the films are presented. The researches show that Mg2Si is a kind of semiconductor with narrow-band-gap, which has good applications in photovoltaic and thermoelectric devices. Furthermore, the film is a new kind of environmental-friendly semiconductor material, and because the compositions of elements are rich in strata and non-toxic pollution, the materials attract great attention. In the technique of epitaxial growth, the relatively mature methods include molecular beam epitaxy, pulsed laser deposition, reaction-diffusion and so on. However, these methods have the problems of harsh preparation and poor quality of the thin film. Finally, current problems and future research trends of the materials are briefly discussed.
- Mg2Si/
- semiconductor thin film/
- material preparation

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参考文献 (1)

[1] MAKITA Y. Kankyo Semiconductors-why and how . Proceeding of Japan-UK joint Workshop on Kankyo-Semiconductors .Tsukuba International Congress Center,August 3-4,2000. [2] WANG Y,WANG X N,MEI Z X,et al.. Epitaxial orientation of Mg₂Si(110) thin film on Si(111) substrate[J].J. Appl. Phys.,2007,102(12):126102-126104. [3] 方容川.固体光谱学[M]. 合肥:中国科学技术大学出版社,2003:60. FANG R CH.Solid Spectroscopy[M]. Hefei:University of Science and Technology of China Press, 2003:60.(in Chinese) [4] SAMSONOV G V,DVORINA L A.Silicides[M]. Moscow:Metallurgy Publishing House,1979:447. [5] TAMURA D,NAGAI R,SUGIMOTO K,et al.. Melt growth and characterization of Mg₂Si bulk crystals[J].Thin Solid Films,2007,515:8272-8276. [6] VANTOMME A,LANGOUCHE G,MAHAN J E,et al.. Growth mechanism and optical properties of semiconducting Mg₂Si thin films[J].Microelectronic Eng.,2000,50(1-4):237-242. [7] AU-YANG M Y,COHEN M. Electronic structure and optical properties of Mg₂Si, Mg₂Ge, and Mg₂Sn[J].Physical Rev.,1969,178(3):1358-1364. [8] AYMERICH F,MULA G. Pseudopotential band structures of Mg₂Si, Mg₂Ge, Mg₂Sn, and of the solid solution Mg₂Ge, Sn[J].Physical Status Solidi,1970,42(2): 697-704. [9] CORKILL J L,COHEN M L. Structural, bonding, and electronic properties of IIA-IV antifluorite compounds[J].Physical Rev. B,1993,48(23):17138-17144. [10] IMAI Y,WATANABE A. Energetics of alkaline-earth metal silicides calculated using a first-principle pseudopotential method[J].Intermetallics,2002,10:333-341. [11] IMAI Y,WATANABE A,MUKAIDA M. Electronic structures of semiconducting alkaline-earth metal silicides[J].J. Alloy. Comp.,2003,358(1-2):257-263. [12] 陈茜,谢泉,闫万琚,等. Mg₂Si电子结构及光学性质的研究[J]. 功能材料 ,2007年增刊(38)卷:4119-4123. CHEN Q,XIE Q,YAN W J,et al.. Study on the electronic structure and optical properties for Mg₂Si[J].Functional Materials,2007 Supplement(38)Vol:4119-4123.(in Chinese) [13] SONG S W,STRIEBEL K A,SONG X Y,et al.. Amorphous and nanocrystalline Mg₂Si thin-film electrodes[J].J. Power Sources,2003,119-121:110-112. [14] SONG S W,STRIEBEL K A,et al.. Electrochemical studies of nanoncrystalline Mg₂Si thin film electrodes orepared by pulsed laser deposition[J].J. Electrochem. Soc.,2003,150(1):121-127. [15] MAHAN J E,VANTOMME A,LANGOUCHE G,et al.. Semiconducting Mg₂Si thin films prepared by molecular-beam epitaxy[J].Physical Rev. B,1996,54(23):16965-16971. [16] GORANOVA E,AMOV B,BALEVA M,et al... Ion beam synthesis of Mg₂Si[J].J. Mater. Sci.,2004,39:1857-1859. [17] KAMILOV T S,KABILOV D K,KAMILOVA R Kn,et al.. Investigation of the magnesium silicide Mg₂Si films . 2006 International Conference on Thermoelectrics,Vienna,Austria 6-10 Aug,2006:468-469. [18] CHU W K,LAU S S,MVLLER H,et al.. Implanted noble gas atoms as diffusion markers in silicide formation[J].Thin Solid Films,1975,25(2):393-402. [19] WITTMER M,LVTHY W,Von ALLMEN M. Laser induced reaction of magnesium with silicon[J].Phys. Lett. A,1979,75(1-2):127-130. [20] JANEGA P L,MCCAFFREY J,LANDHEER D,et al.. Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures[J].Appl. Phys. Lett.,1988,53(21):2056-2058. [21] BOHER P,HOUDY P,KVHNE M,et al.. Tungsten/magnesium silicide multilayers for soft X-ray optics[J].J. X-Ray Sci. Technol.,1992,3(2):118-132. [22] VANTOMME A,MAHAN J E,LANGOUCH G B,et al.. Thin film growth of semiconducting Mg₂Si by codeposition[J].Appl. Phys. Lett.,1997,70(9):1086-1088. [23] TANI J,KIDO H. Thermoelectric properties of Sb-doped Mg₂Si semiconductors[J].Intermetallics,2007,15:1202-1207. [24] TANI J,KIDO H. Thermoelectric properties of Bi-doped Mg₂Si semiconductors[J].Physical B,2005,364:218-224. [25] SONG R B,AIZAWA T,SUN J Q. Synthesis of Mg₂Si_1-xSn_xsolid solutions as thermoelectric materials by bulk mechanical alloying and hot pressing[J].Mater. Sci. Eng. B,2007,136(2-3):111-117.

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