Fabrication and optoelectronic characterization of suspended In2O3nanowire transistors
doi:10.37188/CO.2020-0062
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摘要:一维（1D）半导体纳米线在纳米电子学和纳米光子学中表现出色。然而，纳米线晶体管的电特性对纳米线与衬底之间的相互作用非常敏感，而优化器件结构可以改善纳米线晶体管的电学和光电检测性能。本文报道了通过一步式光刻技术制造的悬浮式In 2O 3纳米线晶体管，显示出54.6 cm 2V −1s −1的高迁移率和241.5 mVdec −1的低亚阈值摆幅。作为紫外光电探测器，光电晶体管显示出极低的暗电流（~10 −13A）和高响应度1.6×10 5A•W −1。悬浮晶体管的沟道材料的这种简单而有效的制备方法可广泛用于制造高性能微纳米器件。Abstract:One-dimensional (1D) semiconductor nanowires have shown outstanding performance in nano-electronics and nano-photonics. However, the electrical properties of the nanowire transistors are very sensitive to interactions between the nanowires and substrates. Optimizing the device structure can improve the electrical and photodetection performance of nanowire transistors. We report a suspended In 2O 3nanowire transistor fabricated by one-step lithography, showing a high mobility of 54.6 cm 2V −1s −1and a low subthreshold swing of 241.5 mVdec −1. As an ultraviolet photodetector, the phototransistor shows an extremely low dark current (~10 −13A) and a high responsivity of 1.6×10 5A•W −1. This simple and effective method of suspending the channel material of a transistor can be widely used in manufacturing high-performance micro-nano devices.
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Key words:
- nanowire/
- In2O3/
- suspension device/
- UV photodetector
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Figure 1.Design and characterization of the single In2O3nanowire device. (a) TEM of a single In2O3nanowire. (b) Dark-field microscopy image of an In2O3nanowire FET. (c) Three-dimensional schematic view of a suspended single In2O3nanowire photodetector. (d) SEM of the suspended single In2O3nanowire photodetector
Figure 3.Electric performance of the single In2O3nanowire devices under dark conditions. (a)I-Vcurves of the nanowire-based photodetector in different atmospheres. (b) Output characteristics of the nanowire-based photodetector under different gate voltages. Orange arrow represent thatVgis from 20 V to −50 V with −10 V steps. Transfer curve switch at different source-drain biases ranging from 0.1 V to 1 V (c) in the air and (d) in vacuum state. Black arrows represent the scanning direction of gate voltage.
Figure 4.Photoresponse properties of the single In2O3nanowire devices. (a)Ids-Vdscharacteristics of the photodetector in the dark and different wavelengths of light. (b) Photocurrent and responsivity of the photodetector under different wavelengths of light. (c)Ids-Vdscharacteristics of the photodetector in the dark and different intensities of light (450 nm). (d) Photoresponsivity and detectivity of the photodetector under the different intensities of light (450 nm).
Figure 5.Time-response characterizations of the In2O3single-nanowire photodetector. (a) Photocurrent response of the device, where the laser light is switched on/off at an interval of 20 s (520 nm, 2.6 mW·cm−2atVds= 1 V. (b) Enlargement of the curve in the 53~72 s range outlined in (a). (c) A single UV photocurrent response of the device (375 nm, 1.6 mW·cm−2). (d) Time-resolved photoresponse of the device showing the rise and fall time of the photocurrent atVds= 0.1 V.
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