Nanofluidic channel-resonant cavity structure for measuring micro-displacement of fluorescent substances
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摘要:本文提出了一种纳流通道-谐振腔耦合结构，用于实现对荧光物质微位移的检测。在本文中，首先，使用时域有限差分法，研究了量子点偏振态及结构参数对荧光与结构耦合效果的影响，进而对结构进行优化；然后，通过测量耦合结构输出光功率的变化，实现对荧光物质微位移的检测；最后，对影响传感灵敏度的因素进行研究。结果表明，相比传统方法，纳流通道-谐振腔耦合结构的折射率处于2.8~3.3之内时，该结构都可以实现对荧光物质微位移的高精度准确传感，并且通过减小纳流通道与谐振腔的间距可进一步提高传感灵敏度。Abstract:In order to measure the micro-displacement of a fluorescent substance, we propose a nanofluidic channel-resonant cavity structure. Firstly, by using the Finite-Difference Time-Domain (FDTD) method, the influences of the quantum dot’s polarization state and structural parameters on the coupling effect of fluorescence and structure are studied and the structure is optimized. Then, the micro-displacement of the fluorescent substance is detected by measuring the change in the optical power output of the coupled structure. Finally, the factors affecting the sensitivity of the sensors are studied. The results show that, compared with the traditional method, when the refractive index of the nanofluidic channel-resonant cavity coupling structure is in the 2.8~3.3 range, the structure can sense of the micro-displacement of a fluorescent substance with high accuracy. The results also show that the sensing sensitivity can be further improved by reducing the distance between the nanofluidic channel and the resonant cavity.
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Key words:
- nanofluidic channel/
- resonant cavity/
- quantum dots/
- micro-displacement
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图 1纳流通道-谐振腔耦合结构二维模型图
Figure 1.Two-dimensional model diagram of a nanofluidic channel-resonant cavity structure
图 3偶极子光源偏振方向不同时的耦合效果曲线和电场分布图
Figure 3.Coupling effect curves and electric field distributions of dipole source with different polarization directions
图 4纳流通道及下波导与谐振腔间距不同时的耦合效果曲线
Figure 4.Coupling effect curves when the distance between the microfluidic channel, the lower waveguide and the resonant cavity are different
图 6纳流通道参数不同时的耦合效果曲线
Figure 6.Coupling effect curves when the microfluidic channel parameters are different
图 7不同量子点位置时端口2的光功率曲线
Figure 7.Optical power curves at port 2 when the quantum dot position changes
图 8量子点处于不同位置时的电场分布
Figure 8.Electric field distributions when quantum dots are in different positions
图 9量子点与结构中心水平距离d4变化时端口2的峰值功率曲线
Figure 9.Peak power curve of port 2 when the horizontal distanced4between the quantum dot and the center of the structure changes
图 10结构间距不同，量子点与结构中心水平距离d4变化时端口2的峰值功率曲线
Figure 10.Peak power curves of port 2 varying withd4, the horizontal distance between the quantum dot and the center of the structure, at different structure spacing
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