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基于介电常数近零态和铟锡氧化物集成硅基波导的电光半加器

梁志勋,许川佩,朱爱军,胡聪,杜社会

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梁志勋, 许川佩, 朱爱军, 胡聪, 杜社会. 基于介电常数近零态和铟锡氧化物集成硅基波导的电光半加器[J]. , 2020, 13(5): 1001-1013. doi: 10.37188/CO.2020-0078
引用本文: 梁志勋, 许川佩, 朱爱军, 胡聪, 杜社会. 基于介电常数近零态和铟锡氧化物集成硅基波导的电光半加器[J]. , 2020, 13(5): 1001-1013.doi:10.37188/CO.2020-0078
LIANG Zhi-xun, XU Chuan-pei, ZHU Ai-jun, HU Cong, DU She-hui. Integrated silicon waveguide electro-optic half-adder based on Epsilon-Near-Zero and ITO[J]. Chinese Optics, 2020, 13(5): 1001-1013. doi: 10.37188/CO.2020-0078
Citation: LIANG Zhi-xun, XU Chuan-pei, ZHU Ai-jun, HU Cong, DU She-hui. Integrated silicon waveguide electro-optic half-adder based on Epsilon-Near-Zero and ITO[J].Chinese Optics, 2020, 13(5): 1001-1013.doi:10.37188/CO.2020-0078

基于介电常数近零态和铟锡氧化物集成硅基波导的电光半加器

doi:10.37188/CO.2020-0078
基金项目:国家自然科学基金(No. 61561012,No. 61671164,No. 61861012);广西省自然科学基金(No. 2018GXNSFAA138115,No. 2017GXNSFAA198021,No. 2020GXNSFAA159172)
详细信息
    作者简介:

    梁志勋(1986—),广西柳州人,工程师,博士研究生,2014年于华南理工大学获得硕士学位,2018年9月至今在桂林电子科技大学仪器科学与技术专业攻读博士学位,主要从事片上光网络的应用研究。E-mail:lzx478@163.com

    许川佩(1968—),广西合浦人,教授,博士生导师,1990年于桂林电子工业学院获得学士学位,2006年于西安电子科技大学获得博士学位,主要从事自动检测技术与智能仪器等方面的研究。E-mail:xcp@guet.edu.cn

  • 中图分类号:TN256, TP381

Integrated silicon waveguide electro-optic half-adder based on Epsilon-Near-Zero and ITO

Funds:Supported by National Natural Science Foundation of China (No. 61561012, No. 61671164, No. 61861012), Natural Science Foundation of Guangxi Province (No. 2018GXNSFAA138115, No. 2017GXNSFAA198021, No. 2020GXNSFAA159172)
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  • 摘要:为了解决传统电光混合运算逻辑单元速率低、功耗高、尺寸大等问题,以实现电光混合高速运算,本文设计了一种基于介电常数近零态(Epsilon-Near-Zero)和铟锡氧化物(ITO)薄膜电调控的集成硅基波导电光混合半加器。利用ITO激活材料薄膜的电调控特性实现了光路通断和交叉,从而实现了两位二进制数的半加法功能,通过3D-FDTD模拟仿真对器件模型结构参数进行了优化设计。仿真实验结果表明,当施加电压为0 V和2.35 V时,器件能够完成光信号逻辑控制。电光混合半加器工作在1550 nm波长时,其插入损耗为0.63 dB,消光比为31.73 dB,数据传输速率为61.62 GHz,每字节消耗能量为13.44 fJ,整个半加器尺寸小于21.3 μm×1.5 μm×1.2 μm。该器件具有结构紧凑、插入损耗低等特点,为高速电光混合光学逻辑器件及半加器设计提供了理论依据。

  • 图 1半加器模型及其电极示意图。(a)半加器平面俯视图(b)半加器3D模型(c)半加器器件加电极方案平面俯视图(d)半加器器件加电极方案3D模型

    Figure 1.Schematic diagram of the proposed electro-optic half-adder model and its electrode. (a) Top view of the half-adder; (b) 3D model of the half-adder; (c) top view of the half-adder with electrode; (d) 3D model of the half-adder with electrode

    图 2ITO薄膜施加电压模型简图及其特性。(a)施加电压模型;(b)模型等效电路;(c)模型等效电路简化图;(d)施加0~4 V电压时,载流子浓度的变化情况;(e)ITO的复合介电常数随电压的变化情况

    Figure 2.Schematic diagram of ITO film's applied voltage and its charateristics. (a) The model of applied voltage; (b) equivalent circuit; (c) simplification of the equivalent circuit; (d) variation of carrier concentration when applied voltage is 0~4 V; (e) relationship between the real (green line) and imaginary (red line) components of the complex permittivity ITO as a function of the gating voltage.

    图 3(a)光信号直通逻辑控制单元;(b)施加电压情况下,光信号直通逻辑控制单元ON状态下的电磁场分布情况;(c)未施加电压情况下,光信号直通逻辑控制单元OFF状态下的电磁场分布情况;(d)光信号交叉逻辑控制单元;(e)施加电压情况下,光信号交叉、直通逻辑控制单元为交叉状态;(f)未施加电压情况下,光信号交叉、直通逻辑控制单元为直通状态

    Figure 3.(a) Straight logic control unit for the optical signal; electromagnetic field distribution of straight logic control unit under ON state (b) and (c) OFF state; (d) BAR and CROSS logic control unit; (e) CROSS state of BAR and CROSS logic control unit with a voltage applied; (f) BAR state of BAR and CROSS logic control unit without a voltage applied

    图 4ON和OFF状态下的透射率和ER随ITO的变化情况

    Figure 4.Transmission andERvary with different ITO thickness in ON and OFF states

    图 5ON和OFF状态下的透射率和ER随SiO2厚度的变化情况

    Figure 5.Transmission andERvary with thickness of SiO2in ON and OFF states

    图 6ON和OFF状态下的透射率和ERLc1的变化情况

    Figure 6.Transmission andERvary withLc1in ON and OFF states

    图 7ON和OFF状态下透射率和ERLc2的变化情况

    Figure 7.Transmission andERvary withLc2in ON and OFF states

    图 8三条平行硅基波导耦合模型

    Figure 8.Coupling model of three parallel waveguides

    图 9ON和OFF状态下透射率和ER随gap的变化情况

    Figure 9.Transmission andERvary with gap in ON and OFF states

    图 10逻辑控制区域施加不同逻辑控制时半加器器件的仿真电磁场分布图。

    Figure 10.The electric field distribution of the half-adder under different biasing conditions

    图 11电光半加器的等效仿真电路

    Figure 11.Equivalent simulation circuit of electro-optic half-adder

    图 12100 Gbit/s数据传输速率下的动态响应图

    Figure 12.Dynamic response waveform when the data transmission rate is 100 Gbit/s

    表 1器件模型最优化参数

    Table 1.Optimized parameters of the device model

    Parameters Values/nm
    ITO 15
    SiO2 14
    gap 140
    Lc1 1350
    Lc2 8700
    下载: 导出CSV

    表 2两位二进制加法功能真值表

    Table 2.Truth table of the half-adder

    input sum carry
    x y
    0 0 0 0
    1 0 1 0
    0 1 1 0
    1 1 0 1
    下载: 导出CSV

    表 3电光半加器性能参数

    Table 3.The performance parameters of the electro-optical half-adder

    iput sum carry ER/(dB) IL/(dB)
    x/V y/V
    0 0 0.00035 0.00026 \ \
    2.35 0 0.54762 0.00021 34.7387 0.57609
    0 2.35 0.54081 0.00019 35.1733 0.63044
    2.35 2.35 0.00038 0.56622 31.7320 0.43103
    下载: 导出CSV
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  • 收稿日期:2020-04-28
  • 修回日期:2020-06-08
  • 网络出版日期:2020-09-16
  • 刊出日期:2020-10-01

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