高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器 -

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高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器

田慧军^{1, 2,},
刘巧莉²,
岳恒²,
胡安琪^2,,,
郭霞^2,,

1.
北京工业大学材料与制造学部，北京 100124
2.
北京邮电大学电子工程学院，北京 100876

详细信息

中图分类号:TN364
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- 被引次数:0
出版历程
- 收稿日期:2020-09-01
- 修回日期:2020-09-14
- 网络出版日期:2020-12-07
- 刊出日期:2021-01-25

Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed

doi:10.37188/CO.2020-0153

TIAN Hui-jun^{1, 2,},
LIU Qiao-li²,
YUE Heng²,
HU An-qi^2,,,
GUO Xia^2,,

1.
Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
2.
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds:Supported by the National Key Research and Development Program of China (No. 2017YFF0104801); National Natural Science Foundation of China (No. 61804012)

More Information

Author Bio:
TIAN Hui-jun (1984—), PhD student, Institute of Laser Engineering, Beijing University of Technology, China. His research interests focus on graphene-based photodetectors. E-mail:tianhj@emails.bjut.edu.cn
GUO Xia (1974—), Professor, School of Electronic Engineering, Beijing University of Posts and Telecommunications, China. Her research interests are on high-response PIN diodes, high speed VCSELs and ultrahigh-sensitive photodetectors in Graphene. E-mail:guox@bupt.edu.cn

Corresponding author:anqihu@bupt.edu.cn;guox@bupt.edu.cn

摘要

摘要:混合结构的石墨烯/半导体光电晶体管因其超高的响应度而备受关注。然而，该类光电晶体管通过源-漏电极测试得到的比探测率( D ^*)容易受到1/ f噪声的限制。本文制备了混合结构的石墨烯/GaAs光电探测器，通过源-栅电极测得 D ^*大约为1.82×10 ¹¹Jones，与通过源-漏电极测量相比， D ^*提高了约500倍。这可归因于界面上肖特基势垒对载流子俘获和释放过程的屏蔽作用。此外，探测器的上升时间和下降时间分别是4 ms和37 ms，响应速度相应地提高了2个数量级。该工作为制备高比探测率和高速的光电探测器提供了一种新的思路。
- 石墨烯/
- 光二极管/
- 比探测率/
- 响应速度
Abstract:Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity ( D ^*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/ fnoise. In this paper, D ^*of ~1.82×10 ¹¹Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D ^*was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed.
- graphene/
- photodiode/
- specific detectivity/
- response speed

HTML全文

Figure 1.(a) Schematic diagram of the graphene/n-GaAs photodetector. The optical and electrical performances were measured by source-gate electrodes. (b) Energy band diagram of the graphene/n-GaAs heterojunction with the Schottky barrier heightΦ_Bof the graphene/GaAs junction of ~0.7 eV. The interface states are depicted at the interface, illustrating that the carrier trapped photons at the graphene/GaAs interface during carrier transport through the junction. (c) Measurement result of the Raman spectrum of graphene on the GaAs substrate. (d) Spectral response of the photodiode under zero bias voltage.

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Figure 2.(a) Current versus voltage curves of the device under different light powers. (b) The relationship between photocurrent and photovoltage (V_oc) with the incident light’s power in the self-driven mode. (c) Responsivity andD^*versus illumination power under a zero bias voltage. (d) Illustration of the carrier trapping and detrapping processes at the interface of the graphene/GaAs interface, which is the main source of 1/fnoise.

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Figure 3.The response time of the photodiode at a zero bias voltage under a laser power of 136 μW whereτ_ris ~4 ms andτ_fis ~37 ms.

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