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摘要: 本文采用反射式全息光栅作为外部反馈元件，设计了638 nm光栅外腔窄线宽 器。使用高分辨率的光谱分析仪检测了Littrow结构的外腔半导体 器的输出光谱，并进一步研究了该 器的阈值和波长调谐特性。实验采用了2400 l/mm和1800 l/mm两种刻线密度的反射式全息光栅进行研究，在120 mA的注入电流下，采用刻线密度为2400 l/mm的光栅外腔 器的输出功率是45.2 mW，将阈值电流由60 mA降至51 mA，下降幅度为11%；采用刻线密度为1800 l/mm的光栅外腔 器的输出功率是38.7 mW，将阈值电流由60 mA降至47 mA，下降幅度为24%，光谱线宽均压窄至3.5 pm，且分别了实现了9.4 nm和10.5 nm宽度的波长调谐。实验结果表明，采用反射式全息光栅的Littrow结构用于半导体 器，极大地改善了半导体 器的性能。Abstract: In this paper, a narrow linewidth laser with an external grating cavity of 638 nm is described, wherein a reflection holographic grating was used as its external feedback element. The spectrum of the diode lasers with the grating external cavity arranged in a Littrow configuration were measured using a high-resolution monochromator and the characteristics of the threshold and tuning properties were investigated. In the experiment, reflection holographic gratings with 2400 l/mm and 1800 l/mm groove density were studied. At 120 mA injection current, the output power of the external cavity laser was 45.2 mW when the groove density was 2400 l/mm, and the threshold current of the LD was reduced from 60 mA to 51 mA and the descent rate was 11%. When the groove density was 1800 l/mm, the output power was 38.7 mW, the threshold current of the LD was reduced from 60 mA to 47 mA, and the descent rate was 24%. Furthermore, the linewidths were suppressed to within 3.5 pm, and the tuning ranges were 9.4 nm and 10.5 nm in wavelength. The experimental results showed that the performance of semiconductor lasers was improved greatly using the Littrow configuration with a reflective holographic grating.
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Key words:
- diode laser /
- holographic grating /
- littrow configuration /
- spectral linewidth
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图 2 （a）自由运行的LD的P-I特性曲线；（b）不同注入电流下的光谱特性
Figure 2. (a) P-I characteristic curve of the free-running diode laser; (b) spectral characteristics at different currents
图 3 （a）光栅外腔半导体 器的P-I特性曲线；（b）2400 l/mm及（c） 1800 l/mm全息光栅外腔 器在不同电流下的光谱特性
Figure 3. (a) P-I characteristic curve of the grating external cavity diode laser; spectral characteristic of (b) 2400 l/mm and (c) 1800 l/mm holographic grating external cavity laser at different currents
图 4 （a）波长调谐范围随注入电流的变化情况；当注入电流为70 mA时（b）2400 l/mm及（c） 1800 l/mm全息光栅外腔 器归一化光谱图
Figure 4. (a) Wavelength tuning range versus injection current; normalized emission spectra of (b) 2400 l/mm and (c) 1800 l/mm holographic grating external cavity lasers with injection current of 70 mA
图 5 两种不同刻线密度下光栅外腔半导体 器阈值电流随激射波长的变化
Figure 5. Threshold current versus lasing wavelength for grating external cavity diode laser with different line densities
图 6 120 mA注入电流下光栅外腔半导体 器输出功率随激射波长的变化情况
Figure 6. Output power of grating external cavity diode laser versus lasing wavelength with injection current of 120 mA
图 7 光栅外腔半导体 器的输出功率稳定性测试结果
Figure 7. Output power stability of the grating external cavity diode laser
图 8 120 mA注入电流下光栅外腔半导体 器的输出光谱特性
Figure 8. Spectral characteristic of the grating external cavity diode laser with injection current of 120 mA
图 9 外腔 器的波长及线宽稳定性测试结果
Figure 9. Wavelength stability and line width stability of the external cavity laser
表 1 2400 l/mm 全息光栅外腔 器与638 nm半导体 器参数性能对比结果
Table 1. Performance comparison of 2400 l/mm holographic grating external cavity laser and 638 nm semiconductor laser
Thresholdcurrent/
mAOutput power/
mW（120mA injection current）Line
width/
nmWavelength tuning range/
nmDiode laser 60 50.6 1.8 3 Diode laser with grating external cavity 51 45.2 0.0035 10 
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