Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon
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摘要:随着光电对抗和超短脉冲 技术的发展，研究超短脉冲 与单晶硅相互作用具有非常重要的理论和实际意义。为了进一步明确532 nm皮秒脉冲 对单晶硅的损伤机理，本文开展了532 nm皮秒脉冲 辐照单晶硅的损伤效应实验研究，测定了损伤阈值，明确了损伤机理，探讨了低通量下的脉冲累积效应。首先，利用波长为532 nm、脉冲宽度为30 ps的 器和金相显微镜，基于1-on-1的 损伤测试方法，测定了单晶硅的零损伤概率阈值为0.52 J/cm 2；其次，研究了皮秒 辐照单晶硅在不同 能量密度下的损伤形貌，发现532 nm皮秒脉冲 对单晶硅的损伤表现为热影响损伤和等离子体冲击损伤，随着 能量密度的增大，按主要的损伤机制可将损伤程度分为：热影响（0.52~3 J/cm 2）、热烧蚀（3~50 J/cm 2)和等离子烧蚀（>50 J/cm 2），且不同情况下，损伤面积随 能量密度分别对应不同的增长规律；最后，研究了低通量下多脉冲的累积效应，发现在0.52 J/cm 2的 能量密度下，连续辐照16个脉冲时表面形成热影响区，验证了多脉冲的累积效应可以降低单晶硅的 损伤阈值。Abstract:With the development of optoelectronic countermeasures and ultrashort pulse laser technology, the study of the interaction between ultrashort pulse laser and monocrystalline silicon has a very important theoretical and practical significance. In order to further clarify the damage mechanism of 532 nm picosecond pulsed laser on monocrystalline silicon, we have conducted an experimental study to measure the damage threshold, clarify the damage mechanism, and discuss the pulse accumulation effect at low flux. Firstly, using a laser with a wavelength of 532 nm, a pulse width of 30 ps and a metallurgical microscope based on the 1-on-1 laser damage test method, the zero damage probability threshold is determined to be 0.52 J/cm 2. Secondly, the damage effect of a picosecond laser irradiated on monocrystalline silicon was studied under different laser fluxes, and it was found that the damage of 532 nm picosecond laser to monocrystalline silicon is manifested as heated-effect damage and plasma impact damage. The increase in energy density can be divided into three stages according to the main damage mechanism: thermal effect (0.52~3 J/cm 2), thermal ablation (3~50 J/cm 2) and plasma effect (>50 J/cm 2), and the damaged areas are corresponded to different growth laws with the laser energy density, respectively. Finally, an experiment for the multi-pulse cumulative effect was carried out at a low laser flux and it was found that at a laser energy density of 0.52 J/cm 2, the surface was irradiated continuously for 16 shots. The formation of a heat-affected zone confirms that the cumulative effect of multiple pulses can lower the laser damage threshold on monocrystalline silicon.
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图 1皮秒 诱导损伤实验装置图
Figure 1.Schematic diagram of the picosecond laser induced damage experiment setup
图 2损伤区域尺寸随 能量密度的变化规律
Figure 2.The size of the damaged area changes with the laser’s energy density
图 4302 J/cm2能量密度的损伤形貌图
Figure 4.Damage morphography at the energy density of 302 J/cm2
图 5能量密度为21.9 J/cm2的损伤形貌图
Figure 5.Damage morpography at the energy density of 21.9 J/cm2
图 6能量密度为3.04 J/cm2的损伤形貌图
Figure 6.Damage morphography at the energy density of 3.04 J/cm2
图 7能量密度为0.52、1.07 J/cm2时脉冲累积效应的损伤形貌
Figure 7.Damage morphography from the pulse accumulation effect at the energy densities of 0.52 J/cm2、1.07 J/cm2
图 8烧蚀区域尺寸随脉冲数量的变化规律
Figure 8.Variation of the ablation zone size with the number of pulses
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