基于宽禁带半导体氧化物微纳材料的紫外探测器研究进展 -

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基于宽禁带半导体氧化物微纳材料的紫外探测器研究进展

doi:10.37188/CO.2022-0132

陈星^{1, 2,,},
周畅^{1, 2,},
刘可为^{1, 2,,},
申德振^{1, 2,,}

1.
中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室, 吉林长春 130033
2.
中国科学院大学材料科学与光电工程研究中心, 北京 100049

基金项目:国家自然科学基金资助项目（No. 62074148，No. 61875194，No. 11727902，No. 12074372）；长春市科技计划项目（No. 21ZY05）；中科院百人计划；中科院青促会项目（No. 2020225）；吉林省自然科学基金（No. 20210101145JC）；中科院长春光机所旭光人才计划

详细信息

作者简介:
陈　星（1984—），男，湖北荆门人，博士，副研究员，博士生导师，主要从事宽禁带半导体光电材料与器件方面的研究。E-mail：chenxing@ciomp.ac.cn
周　畅（1998—），男，天津人，硕士研究生，主要从事宽禁带半导体光电材料与器件方面的研究。E-mail：zhouchang20@mails.ucas.ac.cn
刘可为（1981—），男，辽宁铁岭人，博士，研究员，博士生导师，主要从事宽禁带半导体光电材料与器件方面的研究。E-mail：liukw@ciomp.ac.cn
申德振（1959—），男，辽宁铁岭人，博士，研究员，博士生导师，主要从事宽禁带半导体光电材料与器件方面的研究。E-mail：shendz@ciomp.ac.cn

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出版历程
- 收稿日期:2022-06-15
- 修回日期:2022-07-12
- 网络出版日期:2022-08-08

Review of ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide

CHEN Xing^{1, 2,,},
ZHOU Chang^{1, 2,},
LIU Ke-wei^{1, 2,,},
SHEN De-zhen^{1, 2,,}

1.
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funds:Supported by the National Natural Science Foundation of China (No. 62074148, No. 61875194, No. 11727902, No. 12074372); the Key Research and Development Program of Changchun City (No. 21ZY05); the 100 Talents Program of the Chinese Academy of Sciences; Youth Innovation Promotion Association, CAS (No. 2020225); Natural Science Foundation of Jilin Province (No. 20210101145JC); XuGuang Talents Plan of CIOMP

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Corresponding author:chenxing@ciomp.ac.cn;liukw@ciomp.ac.cn;shendz@ciomp.ac.cn

摘要

摘要:
紫外探测技术是继红外探测与探测技术之后的又一项军民两用探测技术，有广阔的应用前景。真空光电倍增管和Si基光电二极管是常见的商品化紫外探测器，但是真空光电倍增管易受高温和电磁辐射干扰，需要在高压下工作；而Si基光电二极管需要昂贵的滤光片。宽禁带半导体紫外探测器克服了上述两种器件面临的一些问题，成为紫外探测器研究的热点。其中宽禁带氧化物材料，具有易于制备高响应高增益器件、有丰富的微纳结构、易于制备微纳器件的特点，引起了人们的广泛关注。本文对宽禁带半导体氧化物材料的微纳结构器件进行梳理，对近年来的一些相关研究进行了综述。其中涉及的氧化物材料包括ZnO，Ga₂O₃，SnO₂，TiO₂等，涉及的器件结构包括金属-半导体-金属型器件，肖特基结型器件，异质结型器件等。
- 宽禁带半导体/
- 氧化物半导体/
- 微纳结构/
- 紫外探测器
Abstract:
Ultraviolet photodetection technology is another dual-use detection technology after infrared detection and laser detection technology, which has broad application prospects. Vacuum photomultiplier tubes and Si-based photodiodes are common commercial UV detectors, but vacuum photomultiplier tubes are susceptible to high temperatures and electromagnetic radiation, and need to work under high pressure while Si-based photodiodes require expensive filters. Wide bandgap semiconductor ultraviolet photodetectors have overcome some of the problems faced by the above two devices, and are becoming the research hotspot. Among them, wide bandgap oxide materials have attracted extensive attention, due to the advantages of easy preparation for high response and high gain devices, and rich micro-structures and nano-structures. In this paper, ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide are combed, and some related researches in recent years are reviewed. The oxide materials involved include ZnO, Ga₂O₃, SnO₂and TiO₂, etc. and the device structures involved include metal-semiconductor-metal devices, Schottky junction devices and heterojunction devices, etc.
- wide bandgap semiconductor/
- oxide semiconductor/
- micro nano-structure/
- ultraviolet photodetector

HTML全文

图 1器件制备示意图^[15]

Figure 1.Schematic diagram of the photodetector fabrication^[15]

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图 2高质量ZnO微米棒的制备及表面形貌表征。(a) 硅微柱具有疏水侧壁和亲水顶部；(b) 由GaN衬底、前驱体溶液和微柱组成的三明治型组装系统；(c) 连续溶液层的烘干过程和毛细管桥的形成；(d)GaN衬底上的前体ZnO晶体阵列；(e) 以TiO₂薄膜涂层为掩模的ZnO阵列前驱体；(f) 在GaN衬底上制备了高质量的ZnO晶体微棒阵列；分别具有不同直径的ZnO微棒阵列的SEM图像(g–h) 2.2 µm和(i–j) 1.3 µm；(k-n) 为通过扫描共聚焦显微镜获得的与(g–j)对应的ZnO微棒阵列图像(所有比例尺为1 µm)^[16]

Figure 2.Fabrication of high-quality ZnO crystal microrod arrays and their morphological characterization. (a) The silicon micropillar template with lyophobic sidewalls and lyophilic tops. (b) The sandwich-type assembling system composed of the GaN substrate, precursor solution, and micropillar template. (c) The dewetting process of the continuous liquid layer and the formation of capillary bridges. (d) Precursor ZnO crystal arrays on the GaN substrate. (e) Precursor ZnO arrays with a coated TiO₂thin film as the mask. (f) As-fabricated high-quality ZnO crystal microrod arrays on the GaN substrate. SEM images of ZnO microrod arrays with different diameters of (g–h) 2.2 µm and (i–j) 1.3 µm, respectively. (k–n) Topographical images of ZnO microrod arrays corresponding to (g–j) obtained by the laser scanning confocal microscopy. (All scale bars, 1 µm)^[16].

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图 3(a) 基于PET衬底的柔性ZnO MW/聚苯胺光电探测器的光学图像；(b) 在−1 V偏置和3 mW/cm²、365 nm紫外光照下，柔性ZnO MW/聚苯胺光电探测器在各种弯曲角度下的I-t曲线；(c) 在−1 V偏置和3 mW/cm²、365 nm紫外光照下，柔性ZnO-MW/聚苯胺光电探测器反复弯曲之后的I-t曲线^[32]

Figure 3.(a) The optical image of a flexible ZnO MW/polyaniline photodetector on a PET substrate. (b)I-tcurve of the flexible ZnO MW/polyaniline photodetector under 365 nm UV switching (3mW/cm²) at −1 V bias with various bending angles. (c)I-tcurve of the flexible ZnO MW/polyaniline photodetector under 365 nm UV switching (3 mW/cm²) at −1 V bias after bending cycles^[32]

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图 4基于β-Ga₂O₃纳米线阵列薄膜的垂直肖特基结制备流程示意图^[54]

Figure 4.Schematic diagram of the fabrication of vertical Schottky photodiode ofβ-Ga₂O₃nanowires array film^[54]

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图 5基于Ga₂O₃纳米棒阵列的PEC型探测器结构示意图^[67]

Figure 5.Structural diagram of Ga₂O₃NRAs PEC photodetectors^[67]

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