-
摘要:
本文报道了一种基于双有源区的4.7 μm中波红外量子级联 器，脊宽为9.5 μm，可实现室温连续基横模工作。通过在单有源区中心插入0.8 μm InP间隔层，将原有的单有源区转变成双有源区结构，可显著降低器件有源区的峰值温度，同时抑制高阶横模的产生。在288 K温度下，腔长为5 mm的双有源区器件的阈值电流密度为1.14 kA/cm2，连续输出功率为0.71 W，快轴发散角为27.3°，慢轴发散角为18.1°。同采用常规单有源区结构器件相比，采用双有源区结构的器件，其最大光输出功率未出现退化，同时器件慢轴方向由多模变化为基横模，光束质量得到了显著改善。本工作为改善高功率中波量子级联 器的慢轴光束质量提供了一种解决思路。
-
关键词:
- 中红外 /
- 量子级联 器 /
- 双有源区 /
- 金属有机物化学气相沉积 /
- 连续输出
Abstract:This paper reports a 4.7-μm mid-wave infrared quantum cascade laser based on double active region structure with a ridge width of 9.5 μm, which can achieve continuous single transverse mode operation at room temperature. By inserting 0.8-μm InP, the original single active region is transformed into a double active region structure, which can significantly reduce the peak temperature of the device's active region and suppress the generation of higher-order transverse modes. At a temperature of 288 K, the device with a double active region structure with a cavity length of 5 mm has a threshold current density of 1.14 kA/cm2, a continuous output power of 0.706 W, a fast axis divergence angle of 27.3°, and a slow axis divergence angle of 18.1°. Compared with conventional devices with a single active region structure, the devices with a double active region structure have no degradation in their maximum optical output power and show a significant improvement in the beam quality in the slow axis direction of the device. These results provide a solution to the problem of the slow axis beam quality of high-power mid-wave quantum cascade lasers.
-
Key words:
- mid-infrared /
- quantum cascade laser /
- double active region /
- MOCVD /
- continuous-wave output
-
图 1 (a)有限元仿真结构示意图；(b) 在有源区插入不同厚度InP的横向模态的相对品质因子图
Figure 1. (a) Schematic diagram of the finite element simulation structure; (b) relative figure of merit for transverse modes when inserting different InP thicknesses in active region
图 2 (a)单有源区器件及(b)双有源区器件热学仿真结果
Figure 2. Thermal simulation results of (a) single active region device and (b) double active region device
图 3 Sample 1和Sample 2的(a)X射线双晶衍射及其(b)放大图
Figure 3. (a) X-ray double diffraction and their (b) enlarged images of Sample 1 and Sample 2
图 4 (a) Device 1和(c) Device 2的结构示意图；(b) Device 1和(d) Device 2前腔面在电镜下的横截面图
Figure 4. Schematic diagram of (a) Device 1 and (c) Device 2; cross-sectional SEM images of the front cavity of (b) Device 1 and (d) Device 2
图 5 (a) Device 1和Device 2在连续模式下的PIV曲线；(b) Device 1和Device 2在阈值电流下的光谱
Figure 5. (a) PIV curves of Device 1 and Device 2 in continuous wave; (b) spectra of Device 1 and Device 2 at threshold current
图 6 Device 1和Device 2在(a)慢轴方向及(b)快轴方向的远场
Figure 6. Far fields of Device 1 and Device 2 in the (a) slow axis direction and (b) fast axis directions
表 1 不同材料不同掺杂浓度的有效折射率[25]
Table 1. Effective refractive indexes of different materials with different doping conditions
Materials Doping density Refractive index InP substrate 2×1017 3.084+2.00000E-4i InP 2×1016 3.091+2.00000E-5i InGaAs 2×1016 3.393+7.88405E-5i Active 2×1017 3.245+4.01336E-5i InP 2×1017 3.084+2.00000E-4i InP 1×1017 3.088+1.00000E-4i InP 5×1018 2.893+5.00000E-3i InP 2×1019 2.188+2.70000E-2i Au / 3.319+1.84110E+1i Si3N4 / 1.358+6.50000E-4i Fe:InP / 3.099+6.34895E-8i 
下载: 导出CSV
-
[1] FAIST J, CAPASSO F, SIVCO D L, et al. Quantum cascade laser[J]. Science, 1994, 264(5158): 553-556. doi: 10.1126/science.264.5158.553 [2] 赵越, 张锦川, 刘传威, 等. 中远红外量子级联 器研究进展(特邀)[J]. 红外与 工程,2018,47(10):1003001. doi: 10.3788/IRLA201847.1003001ZHAO Y, ZHANG J CH, LIU CH W, et al. Progress in mid-and far-infrared quantum cascade laser (invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003001. (in Chinese). doi: 10.3788/IRLA201847.1003001 [3] DELY H, BONAZZI T, SPITZ O, et al. 10 Gbit s−1 free space data transmission at 9 µm wavelength with unipolar quantum optoelectronics[J]. Laser & Photonics Reviews, 2022, 16(2): 2100414. [4] SPITZ O, DIDIER P, DURUPT L, et al. Free-space communication with directly modulated mid-infrared quantum cascade devices[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28(1): 1200109. [5] 温志渝, 王玲芳, 陈刚. 基于量子级联 器的气体检测系统的发展与应用[J]. 光谱学与光谱分析,2010,30(8):2043-2048. doi: 10.3964/j.issn.1000-0593(2010)08-2043-06WEN ZH Y, WANG L F, CHEN G. Development and application of quantum cascade laser based gas sensing system[J]. Spectroscopy and Spectral Analysis, 2010, 30(8): 2043-2048. (in Chinese). doi: 10.3964/j.issn.1000-0593(2010)08-2043-06 [6] FATHOLOLOUMI S, DUPONT E, CHAN C W I, et al. Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling[J]. Optics Express, 2012, 20(4): 3866-3876. doi: 10.1364/OE.20.003866 [7] LI L H, CHEN L, ZHU J X, et al. Terahertz quantum cascade lasers with> 1 W output powers[J]. Electronics Letters, 2014, 50(4): 309-311. doi: 10.1049/el.2013.4035 [8] VITIELLO M S, SCALARI G, WILLIAMS B, et al. Quantum cascade lasers: 20 years of challenges[J]. Optics Express, 2015, 23(4): 5167-5182. doi: 10.1364/OE.23.005167 [9] BECK M, HOFSTETTER D, AELLEN T, et al. Continuous wave operation of a mid-infrared semiconductor laser at room temperature[J]. Science, 2002, 295(5553): 301-305. doi: 10.1126/science.1066408 [10] LYAKH A, MAULINI R, TSEKOUN A, et al. 3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach[J]. Applied Physics Letters, 2009, 95(14): 141113. doi: 10.1063/1.3238263 [11] BAI Y B. High wall plug efficiency quantum cascade lasers[D]. Xi’an: Northwestern University, 2011. [12] BAI Y, BANDYOPADHYAY N, TSAO S, et al. Highly temperature insensitive quantum cascade lasers[J]. Applied Physics Letter, 2010, 97(25): 251104. doi: 10.1063/1.3529449 [13] WANG F, SLIVKEN S, WU D H, et al. Continuous wave quantum cascade lasers with 5.6 W output power at room temperature and 41% wall-plug efficiency in cryogenic operation[J]. AIP Advances, 2020, 10(5): 055120. doi: 10.1063/5.0003318 [14] NIU SH, YANG P CH, HUANG R X, et al. High power, broad tuning quantum cascade laser at λ ~8.9 µm[J]. Optics Express, 2023, 31(25): 41252-41258. doi: 10.1364/OE.505349 [15] WANG C A, HUANG R K, GOYAL A, et al. OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers[J]. Journal of Crystal Growth, 2008, 310(23): 5191-5197. doi: 10.1016/j.jcrysgro.2008.07.100 [16] ROBERTS J S, GREEN R P, WILSON L R, et al. Quantum cascade lasers grown by metalorganic vapor phase epitaxy[J]. Applied Physics Letters, 2003, 82(24): 4221-4223. doi: 10.1063/1.1583858 [17] BOTEZ D, KIRCH J D, BOYLE C, et al. High-efficiency, high-power mid-infrared quantum cascade lasers [Invited][J]. Optical Materials Express, 2018, 8(5): 1378-1398. doi: 10.1364/OME.8.001378 [18] FEI T, ZHAI SH Q, ZHANG J CH, et al. 3 W continuous-wave room temperature quantum cascade laser grown by metal-organic chemical vapor deposition[J]. Photonics, 2023, 10(1): 47. doi: 10.3390/photonics10010047 [19] FEI T, ZHAI SH Q, ZHANG J CH, et al. High power λ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K[J]. Journal of Semiconductors, 2021, 42(11): 112301. doi: 10.1088/1674-4926/42/11/112301 [20] SUN Y Q, YIN R, ZHANG J CH, et al. High-performance quantum cascade lasers at λ ~9 µm grown by MOCVD[J]. Optics Express, 2022, 30(21): 37272-37280. doi: 10.1364/OE.469573 [21] 庞磊, 程洋, 赵武, 等. 基于MOCVD生长的4.6 μm中红外量子级联 器[J]. 红外与 工程,2022,51(6):20210980. doi: 10.3788/IRLA20210980PANG L, CHENG Y, ZHAO W, et al. Mid-infrared quantum cascade laser grown by MOCVD at 4.6 µm[J]. Infrared and Laser Engineering, 2022, 51(6): 20210980. (in Chinese). doi: 10.3788/IRLA20210980 [22] 孙永强, 费腾, 黎昆, 等. MOCVD生长的瓦级中波红外高功率量子级联 器[J]. 光学学报,2022,42(22):2214002. doi: 10.3788/AOS202242.2214002SUN Y Q, FEI T, LI K, et al. MOCVD-based mid-wave infrared quantum cascade lasers with watt-level power[J]. Acta Optica Sinica, 2022, 42(22): 2214002. (in Chinese). doi: 10.3788/AOS202242.2214002 [23] SUTTINGER M, GO R, AZIM A, et al. High brightness operation in broad area quantum cascade lasers with reduced number of stages[C]. Proceedings of 2019 Conference on Lasers and Electro-Optics, IEEE, 2019: 1-2. [24] BISMUTO A, GRESCH T, BÄCHLE A, et al. Large cavity quantum cascade lasers with InP interstacks[J]. Applied Physics Letters, 2008, 93(23): 231104. doi: 10.1063/1.3042213 [25] RYU J H, KIRCH J D, KNIPFER B, et al. Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth[J]. Optics Express, 2021, 29(2): 2819-2826. doi: 10.1364/OE.414489 [26] XIE F, CANEAU C, LEBLANC H P, et al. Room temperature CW operation of short wavelength quantum cascade lasers made of strain balanced Ga xIn1- xAs/Al yIn1- y as material on InP substrates[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(5): 1445-1452. doi: 10.1109/JSTQE.2011.2136325 [27] YU N F, DIEHL L, CUBUKCU E, et al. Near-field imaging of quantum cascade laser transverse modes[J]. Optics Express, 2007, 15(20): 13227-13235. doi: 10.1364/OE.15.013227 [28] LEE H K, YU J S. Thermal effects in quantum cascade lasers at λ ~4.6 μm under pulsed and continuous-wave modes[J]. Applied Physics B, 2012, 106(3): 619-627. -
下载:
计量
- 文章访问数: 136
- HTML全文浏览量: 81
- PDF下载量: 39
- 被引次数: 0
