Progress in Ge/Si heterostructures for light emitters
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摘要:近年来,与Si的CMOS工艺相兼容的Ge/Si异质结构发光器件取得很多重要的进展。本文概述了Si基Ge异质结构发光器件的最新成果,如Ge/Si量子点发光二极管、Si衬底上的Ge发光二极管及 器和Ge/SiGe多量子阱发光二极管,分别描述了这些器件的特点和增强其发光特性的途径。最后展望了Si基Ge异质结构发光器件的发展趋势,指出尽管Si基Ge异质结构发光器件获得了很大的发展,但是器件的发光效率仍然很低,离实用还有一定距离,还需要在材料和器件的结构方面有更多的创新。
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关键词:
- 发光器件/
- 发光二极管/
- Ge/
- Ge/Si量子点/
- Ge/SiGe量子阱
Abstract:Due to the compatibility of Si-based light emitters with Si CMOS processes, Ge/Si heterostructures based light emitters have developed significantly. This paper reviews the most recent progress of this field, including Ge/Si Quantum Dot(QD) Light Emitting Diode(LED), Ge light emitting diode on Si, Ge laser on Si, and Ge/SiGe Multiple Quantum Well(MQW) light emitting diode. It describes the characteristics of these light emitting devices and how to enhance their luminescent properties. Finally, it discusses the challenges and opportunities associated with these approaches and suggests that much innovation should be promoted in material and device structures. -
[1] PANICCIA M. Integrating silicon photonics[J].Nature Photonics,2010,4:498-499. [2] REED G T. Device physics:the optical age of silicon[J].Nature,2004,427(6975):595-596. [3] IYER S S,XIE Y H. Light emission from silicon[J].Science,1993,260(5104):40-46. [4] GREEN M A,ZHAO J,WANG A,et al.. Efficient silicon light-emitting diodes[J].Nature,2001,412:805-808. [5] NG W L,LOURENCO M A,GWILLIAM R M,et al.. An efficient room-temperature silicon-based light-emitting diode[J].Nature,2001,410:192-195. [6] RONG H,JONES R,LIU A,et al.. A continuous-wave Raman silicon laser[J].Nature,2005,433:725-728. [7] RONG H,LIU A,JONES R,et al.. An all-silicon Raman laser[J].Nature,2005,433:292-294. [8] JONES R,PARK H D,FANG A W,et al.. Hybrid silicon integration[J].J. Materials Science: Materials in Electronics,2009,20(1):3-9. [9] LIU H,WANG T,JIANG Q,et al., Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate[J].Nature Photonics,2011,5(7):416-419. [10] CULLIS A G,CANHAM L T. Visible light emission due to quantum size effects in highly porous crystalline silicon[J].Nature,1991,353(6342):335-338. [11] THEWALT M L W,HARRISON D A,REINHART C F,et al.. Type II band alignment in Si1-xGex/Si(001) quantum wells:yhe ubiquitous type I luminescence results from band bending[J].Physical Rwview Lett.,1997,79(2):269-272. [12] BRUNHES T,BOUCAUD P,SAUVAGE S,et al.. Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition[J].Appl. Phys. Lett.,2000,77(12):1822-1824. [13] CHANG W H,CHOU A T,CHEN W Y,et al.. Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots[J].Appl. Phys. Lett.,2003,83(14):2958-2960. [14] STOFFEL M,DENKER U,SCHMIDT O G. Electroluminescence of self-assembled Ge hut clusters[J].Appl. Phys. Lett.,2003,82(19):3236-3238. [15] JINSONG X,TAKEDA Y,USAMI N,et al.. Room-temperature electroluminescence from Si microdisks with Ge quantum dots[J].Optics Express,2010,18(13):13945-13950. [16] XU X,TSUBOI T,CHIBA T,et al.. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities[J].Optics Express,2012,20(13):14714-14721. [17] SCHMIDT O G,LANGE C,EBERL K. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)[J].Appl. Phys. Lett.,1999,75(13):1905-1907. [18] DAS S,DAS K,SINGHA R,et al.. Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands[J].Nanoscale Research Lett.,2011,6(1):416. [19] SHI W H,LI C B,LUO L P,et al.. Growth of Ge quantum dot mediated by boron on Ge wetting layer[J].J. Crystal Growth,2005,279(3-4):329-334. [20] LIU Z,CHENG B,HU W,et al.. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J].Nanoscale Research Lett.,2012,7(1):383. [21] YAKIMOV A I,BLOSHKIN A A,TIMOFEEV V A,et al.. Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots[J].Appl. Phys. Lett.,2012,100(5):053507. [22] LIU Z,HU W,SU S,et al.. Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping[J].Optics Express,2012,20(20):22327-22333. [23] LUAN H C,LIM D R,LEE K K,et al.. High-quality Ge epilayers on Si with low threading-dislocation densities[J].Appl. Phys. Lett.,1999,75(19):2909-2911. [24] LIU J,SUN X,PAN D,et al.. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si[J].Optics Express,2007,15(18):11272-11277. [25] LIU J F,CANNON D D,WADA K,et al.. Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100)[J].Physical Review B,2004,70(15):155309. [26] CHENG T H,PENG K L,KO C Y,et al.. Strain-enhanced photoluminescence from Ge direct transition[J].Appl. Phys. Lett.,2010,96(21):429085. [27] JAIN J R,HRYCIW A,BAER T M,et al.. A micromachining-based technology for enhancing germanium light emission via tensile strain[J].Nature Photonics,2012,6(6):398-405. [28] LIM P H,PARK S,ISHIKAWA Y,et al.. Enhanced direct bandgap emission in germanium by micromechanical strain engineering[J].Optics Express,2009,17(18):16358-16365. [29] XIAOCHEN S,JIFENG L,KIMERLING L C,et al.. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si[J].Appl. Phys. Lett.,2009,95(1):011911. [30] CHENG S-L,LU J,SHAMBAT G,et al.. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate[J].Optics Express,2009,17(12):10019-10024. [31] HU W,CHENG B,XUE C,et al., Electroluminescence from Ge on Si substrate at room temperature[J].Appl. Phys. Lett.,2009,95(9):092102. [32] SVESS M J,CARROLL L,SIGG H,et al.. Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth[J].Materials Science and Engineering:B,2012,177(10):696-699. [33] SUN X C,LIU J F,KIMERLING L C,et al.. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes[J].Optics Letters,2009,34(8):1198-1200. [34] LIU J F,SUN X C,KIMERLING L C,et al.. Direct-gap optical gain of Ge on Si at room temperature[J].Optics Lett.,2009,34(11):1738-1740. [35] LIU J,SUN X,CAMACHO-AGUILERA R,et al.. Ge-on-Si laser operating at room temperature[J].Optics Lett.,2010,35(5):679-681. [36] CAMACHO-AGUILERA R E,CAI Y,PATEL N,et al.. An electrically pumped germanium laser[J].Optics Express,2012,20(10):11316-11320. [37] CAMACHO-AGUILERA R E,CAI Y,BESSETTE J T,et al.. High active carrier concentration in n-type, thin film Ge using delta-doping[J].Optics Materials Express,2012,2(11):1462-1469. [38] KUO Y-H,LEE Y K,GE Y,et al.. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon[J].Nature,2005,437(7063):1334-1336. [39] CHEN Y H,LI C,ZHOU Z W,et al.. Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate[J].Appl. Phys. Lett.,2009,94(14):141902. [40] CHAISAKUL P,MARRIS-MORINI D,ISELLA G,et al.. Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide[J].Appl. Phys. Lett.,2011,99(14):141106. [41] WU P H,DUMCENCO D,HUANG Y S,et al.. Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure[J].Appl. Phys. Lett.,2012,100(14):141905. [42] LIU Z,HU W,LI C,et al.. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells[J].Appl. Phys. Lett.,2012,101(23):231108.
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