热蒸发与离子束溅射制备LaF<sub>3</sub>薄膜的光学特性

才玺坤; 张立超; 梅林; 时光

doi:10.3788/CO.20140705.0808

热蒸发与离子束溅射制备LaF₃薄膜的光学特性

doi: 10.3788/CO.20140705.0808

中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室, 吉林长春 130033

基金项目:

国家重大科技专项（02专项）基金资助项目（No.2009ZX02205）

详细信息

通讯作者:
才玺坤，E-mail：christcxk@126.com

中图分类号: O484.41
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出版历程
- 收稿日期: 2014-04-15
- 修回日期: 2014-07-18
- 刊出日期: 2014-09-25

Optical properties of LaF₃ thin films prepared by thermal evaporation and ion beam sputtering

State Key Laboratory of Applied Optics, Chaugchuu lustatute of Optics, Fame Mechauacs and Physics Chaua Academy of Sciences, Chaugchuu 130033, China

摘要

摘要: 研究了钼舟热蒸发工艺和离子束溅射方法制备的单层LaF3薄膜的特性。首先，采用分光光度计测量了LaF3薄膜的透射率和反射率光谱，使用不同模型拟合得出薄膜的折射率和消光系数。然后，采用应力仪测量了加热和降温过程中LaF3薄膜的应力-温度曲线。最后，采用X射线衍射仪测试了薄膜的晶体结构。实验结果表明，热蒸发制备的LaF3（RH LaF3）存在折射率的不均匀性，在193 nm，其折射率和消光系数分别为1.687和510-4，而离子束溅射制备的LaF3（IBS LaF3）折射率和消光系数分别为1.714和910-4。两种薄膜表现出相反的应力状态，RH LaF3薄膜具有张应力，而IBS LaF3具有压应力，退火之后其压应力减小。热蒸发制备的MgF2/LaF3减反膜在193 nm透过率为99.4%，反射率为0.04%，离子束溅射制备的AlF3/LaF3减反膜透过率为99.2%，反射率为0.1%。
- 薄膜 /
- LaF3 /
- 热蒸发 /
- 离子束溅射 /
- 应力 /
- 减反膜
Abstract: To meet the requirements for different practical applications, we investigate the properties of single LaF3 layer deposited by resistive heating Mo-boat(RH) and ion beam sputtering(IBS) in this paper. First, transmittance and reflectance spectra of LaF3 thin films were measured by an UV-visible spectrophotometer, and the refractive indexes and extinction coefficients were obtained by using different models. Second, stress-temperature curves of LaF3 thin films during heating and cooling cycles were carried out by a stress measurement system. Finally, the X-ray diffraction(XRD) was used to characterize the microstructure of LaF3 layers. Experimental results indicate that LaF3 thin film fabricated by thermal evaporation(RH LaF3) had an inhomogeneous refractive index; the refractive index and extinction coefficient at 193 nm are 1.687 and 510-4 for RH LaF3, and 1.714 and 910-4for IBS LaF3, respectively. RH LaF3 and IBS LaF3 exhibited inverse stress status. RH LaF3 had a tensile stress and IBS LaF3 showed a compressive stress, which decreased after annealing. The transmittances are 99.4% and 99.2% for RH deposited MgF2/LaF3 AR coating and IBS deposited AlF3/LaF3 AR coating, and the corresponding measured reflectances are 0.04% and 0.1%,respectively.
- thin films /
- LaF3 /
- thermal evaporation /
- ion beam sputtering /
- stress /
- AR

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参考文献(1)

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