Advance on high power diode laser coupling
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摘要:经过近30年的发展,半导体 器已由信息器件逐步发展成为能量器件,特别是大功率高光束质量半导体 器,已从泵浦光源过渡成为直接作用光源,并部分应用在加工及国防领域。本文介绍了大功率半导体 单元发展现状,分析讨论了各种 合束技术及相应的合束光源,介绍了长春光机所在 合束方面所做的部分工作,提出了我国半导体 产业建设及发展的几点建议,并对半导体 技术的发展新动向进行了展望。随着单元亮度的提升和合束技术的成熟,大功率半导体 源作为间接光源和直接作用光源将在国防和工业领域大放异彩。Abstract:During the past 30 years of development, diode lasers have gradually become into energy components from the initial information ones. Especially for the high power diode laser source with high beam quality, it has been transformed from the pumping laser to the direct function laser source, and partly applied in the field of materials processing and national defense. The development situation on the laser units is firstly introduced. Then the various methods of laser combining and the corresponding combining sources are analyzed and discussed. The CIOMP's works on the laser combination are presented. Some suggestions for the development of diode laser industry in China are propounded. The new development trends of the diode laser technology are finally prospected. With the increase of the unit brightness and the mature of laser coupling technology, high power diode lasers, either as the direct sources or indirect sources, will have important impacts on the defense and industrial fields.
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Key words:
- diode laser/
- laser coupling/
- high power/
- high beam quality
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图 2条宽90~100μm、波长9xxnm的半导体 单管功率研究进展
Figure 2.Research advance on 9xxnm single emitters with the width of 90~100μm
图 7(a)偏振合束及(b)粗波长合束示意图
Figure 7.Sketch of (a)polarization multiplexing and (b)coarse wavelength multiplexing
图 8808和880 nm波长合束所用二向分色镜的透射率曲线
Figure 8.Transmission curves of a dichroic len for coupling 808 nm and 880 nm
图 9VBG外腔反馈实现光谱控制原理图
Figure 9.Spectral controlling principle diagram by VBG external cavity feedback
图 10德国Directphotonics实现间隔4nm的5波长合束光谱分布
Figure 10.Spectral distribution of 5 wavelengths with the interval of 4 nm from Germany Directphotonics
图 11(a)反射VBG和(b)透射VBG的波长合束方式
Figure 11.Wavelength multiplexing of reflection VBG(a) and transmission VBG(b)
图 12RTHW采用的合束VBG和波长窄化VBG光谱分布
Figure 12.Spectral distribution of multiplexing VBGs and spectrum-narrowed VBGs from Germany RWHM
图 14(a)内置不同周期的光栅调节 波长(b)光谱合束输出(c)间隔2 nm的输出光谱
Figure 14.(a)Wavelength modulation by internal grating; (b)spectral beam combining; (c)spectral distribution of six single emitters with the wavelength interval of 2 nm
图 16面光栅结合外腔反馈式光谱合束结构示意图
Figure 16.SBC by a diffractive grating with external-cavity feedback
图 17各种类型 器功率与光束质量分布图及应用要求
Figure 17.Map of power vs. beam quality from various types of lasers and demands on the materials processing
图 18(a)半导体 源进行金属薄板切割；(b)和(c)为切割样品
Figure 18.(a)Direct diode laser sources for metal sheet cutting； (b) and (c)samples of laser cutting
图 19(a)半导体 源进行不锈钢无焊料焊接图；(b)不锈钢焊接样品；(c)半导体 源
Figure 19.(a)Direct diode laser sources for stainless steel welding without any solders; (b)samples of laser welding; (c)diode laser source
图 20(a)万瓦级半导体 源 熔覆图；(b) 熔覆样品
Figure 20.(a)Direct diode laser sources with ten thousands watts for laser cladding; (b)samples of laser cladding
图 21基于透射光栅的外腔反馈光谱合束结构(a)及光谱输出结果(b)
Figure 21.SBC structure of external cavity feedback based on transmission grating(a) and output spectrum(b)
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