Fabrication of optical waveguide amplifiers based on bonding-type NaYF4: Er nanoparticles-polymer
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摘要:为了克服主客掺杂型有源材料均匀性和稳定性差的问题，采用键合掺杂方法，将高温热解法制备的油酸修饰掺铒氟钇钠纳米晶粒与甲基丙烯酸甲酯发生共聚反应，形成键合型有源芯层材料。纳米晶粒均匀固定在聚合物分子链上，抑制了高浓度掺杂时的团聚析出且材料更稳定。纳米粒子在聚合物中的质量百分比达到约1wt%，具有良好的成膜性，用原子力显微镜照片观察薄膜表面粗糙度为1.76 nm。用椭偏仪测量薄膜光学性质，并用柯西色散模型拟合出薄膜折射率随波长的变化关系，材料在1 550 nm信号光波长的折射率为1.485。设计嵌入式波导结构，采用有限元方法进行模式分析和计算光场强度分布。采用紫外光刻和感应耦合等离子体刻蚀工艺制备凹槽形下包层，填充有源材料制备条形波导放大器。实验结果表明，当1 550 nm信号光功率为0.1 mW，1 480 nm泵浦光功率为390 mW时，在1.2 cm长的样品中得到了3.58 dB的信号光相对增益。Abstract:In order to improve the uniformity and stability of the rare earth doped active materials, a copolymerization typed material is presented to fabricate the waveguide amplifiers. Oleic acid (OA)-NaYF 4:Er nanoparticles are synthesized by the high-temperature pyrolysis, and the active core materials are prepared by the copolymerization of the outermost oleic acid of the nanoparticles and methylmethacrylate (MMA). The concentration of nanoparticles in the active materials is about 1wt%. Atomic force microscopy image shows that the active film is very smooth, and the root mean square is about 1.76 nm. Ellipsometry is used to measure the refractive index of the material, which is about 1.485 at 1 550 nm wavelength. Embedded single-mode waveguides are designed. The distributions of electric field intensity and the transmission mode are simulated by finite element method. The waveguide amplifiers are prepared by the photolithography and inductively coupled plasma. The experimental results show that the relative gains of 3.58 dB is obtained in a 1.2 cm long device, when the pump power is 390 mW at 1 480 nm wavelength and the signal power is 0.1 mW at 1 550 nm wavelength.
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图 1掺铒放大器在1480 nm泵浦下的光放大原理示意图
Figure 1.Schematic diagram of the principle of Erbium-doped amplifier under 1480 nm pumping light
图 3复合材料OA-NaYF4: Er-PMMA的折射率随波长变化曲线 (a) 薄膜剖面显微镜照片 (b) 薄膜AFM照片
Figure 3.Curve of refraction index of the OA-NaYF4: Er-PMMA with different wavelength. The inset (a) shows the microscope photo of the cross section of the film. The inset (b) shows the AFM image of the surface of the film
图 4波导放大器的结构设计 (a) 嵌入式波导结构示意图 (b) 波导中传输的电场强度分布的等高线图 (c) 电场强度的三维曲面图
Figure 4.Structure design of waveguide amplifiers. (a) cross section of the embedded waveguides, (b) color contour and (c) three-dimensional surface plot of the distribution of electric field intensity of the waveguide
图 6波导放大器的增益测试 (a) 刻蚀的PMMA凹槽的SEM照片；(b)980 nm泵浦下，器件表面沿波导传输线的上转换发光照片；(c)1480 nm泵浦下，波导放大器的相对增益随泵浦光功率的变化曲线
Figure 6.Gain test of the waveguide amplifier. (a) SEM micrograph of a 9 μm wide and 4 μm deep groove of PMMA cladding, (b) photo of up-conversion fluorescence along a waveguide under 980 nm pumping, (c) relative gain as a function of pump power under 1480 nm pumping light
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