新型二维材料在固体器中的应用研究进展 -

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新型二维材料在固体器中的应用研究进展

doi:10.3788/CO.20181101.0018

北京工业大学应用数理学院, 北京 100124

基金项目:

国家自然科学基金项目61575011

北京工业大学基础研究基金项目X3006111201501

详细信息

作者简介:
公爽(1994—), 女, 山东临沂人, 硕士研究生, 主要从事固体器等方面的研究。E-mail:gongshuang@emails.bjut.edu.cn
田金荣(1975—)，男，山东德州人，博士，副教授，硕士生导师，主要从事全固态技术和飞秒技术等方面的研究。E-mail:jrtian@bjut.edu.cn

中图分类号:TN248.1
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出版历程
- 收稿日期:2017-09-05
- 修回日期:2017-10-26
- 刊出日期:2018-02-01

Advances in new two-dimensional materials and its application in solid-state lasers

College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

Funds:

National Natural Science Foundation of China61575011

Basic Research Foundation of Beijing University of TechnologyX3006111201501

More Information

Corresponding author:TIAN Jin-rong, E-mail:jrtian@bjut.edu.cn

摘要

摘要:本文主要介绍了二维可饱和吸收体材料在固体器中的应用与研究进展。简要介绍了新型二维材料的性质和优点。以石墨烯、拓扑绝缘体、过渡金属硫化物和黑磷等新型二维材料为例分析了它们在固体器中实现调Q或锁模的过程，展示了二维材料在脉冲固体研究中的重要应用前景。二维材料与固体器的结合，可进一步推进二维材料的研究，有望开发出大量新型固体器件并且作为基础光源应用于多个领域，推动相关领域的发展。
- 二维材料/
- 固体器/
- 可饱和吸收体/
- 脉冲
Abstract:The applications and advances of new two-dimensional materials as saturable absorbers in solid-state lasers are introduced in this paper. The characteristics and advantages of two-dimensional materials are briefly summarized. Taking the new two-dimensional materials such as graphene, topological insulator, transition metal dichalcogenides and black phosphorus as examples, the Q-switched and mode-locked processes in solid-state lasers are analyzed, which reveals the promising future of new-type two-dimensional materials for the applications in the research of pulsed solid-state lasers. The combination of solid-state lasers and two-dimensional materials can further improve the research of two-dimensional materials and is expected to develop a large number of new solid-state lasers and used as a base light source in many areas to promote the developments of related fields.
- two-dimensional materials/
- solid-state lasers/
- saturable absorbers/
- pulsed laser

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图 1石墨烯锁模Nd：YAG 器示意图^[20]

Figure 1.Schematic of the mode-locked Nd: YAG laser with graphene^[20]

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图 2石墨烯锁模Cr：ZnS 器^[30]

Figure 2.Schematic of the mode-locked Cr:ZnS laser with graphene^[30]

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图 3石墨烯锁模Cr：LiSAF 器^[43]

Figure 3.Schematic of the mode-locked Cr:LiSAF laser with graphene^[43]

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图 4Bi₂Se₃调Q的Er：YAG 器^[46]

Figure 4.Schematic of the Q-switched Er:YAG laser with Bi₂Se₃^[46]

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图 5MoS₂为可饱和吸收体的Nd：YAlO₃调Q 器^[58]

Figure 5.Schematic ofQ-switched Nd:YAlO₃laser with MoS₂as saturable absorber^[58]

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图 6WS₂辅助锁模飞秒固体器示意图^[71]

Figure 6.Schematic of the mode-locked Yb:YAG laser with WS₂^[71]

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图 7黑磷锁模Nd：YVO₄ 器实验装置^[75]

Figure 7.Schematic of the mode-locked Nd: YVO₄laser with black phosphorus^[75]

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参考文献 (78)

[1]	ZAYHOWSKI J. Q-switched microchip lasers find real-world application[J]. Laser Focus World, 1999, 35(8):129-136.https://www.ll.mit.edu/.../pdf/vol03_no3/3.3.6.microchiplaser.pdf
[2]	WILLIAMS J A, FRENCH P M, TAYLOR J R, et al.. Passive mode locking of a cw energy-transfer dye laser operating in the infrared near 800 nm[J]. Opt. Lett., 1988, 13(10):811-813.doi:10.1364/OL.13.000811
[3]	朱启海, 赵长明, 张逸辰, 等. 电池技术进展[J].光学精密工程, 2016, 24(10):316-322.http://d.g.wanfangdata.com.cn/Periodical_kjxx-xsb200829046.aspx ZHU Q H, ZHAO CH M, ZHANG Y CH, et al. Development of laser cell technology[J]. Optics and Precision Engineering, 2016, 24(10):316-322.(in Chinese)http://d.g.wanfangdata.com.cn/Periodical_kjxx-xsb200829046.aspx
[4]	曾飞, 高世杰, 伞晓刚, 张鑫, 等. 机载通信系统发展现状与趋势[J]. 中国光学, 2016, 9(1): 65-73.http://kns.cnki.net/KCMS/detail/detail.aspx?filename=zgga201601009&dbname=CJFD&dbcode=CJFQ ZENG F, GAO SH J, SAN X G, et al. . Development status and trend of airborne laser communication terminals[J].Chinese Optics, 2016, 9(1): 65-73. (in Chinese)http://kns.cnki.net/KCMS/detail/detail.aspx?filename=zgga201601009&dbname=CJFD&dbcode=CJFQ
[5]	KELLER U, MILLER D A, BOYD G D, et al.. Solid-state low-loss intracavity saturable absorber for Nd: YLF lasers:an antiresonant semiconductor Fabry-Perot saturable absorber[J]. Opt. Lett., 1992, 17(7):505-507.doi:10.1364/OL.17.000505
[6]	SCHMIDT W, FER S C H, et al.. Self-mode-locking of dye-lasers with saturated absorbers[J]. Phys. Lett. A, 1968, 26(11):558-559.doi:10.1016/0375-9601(68)90546-X
[7]	SARUKUDA N, ISHIDA Y, YANAGAWA T, et al.. All solid state CW passively mode locked Ti:sapphire laser using a colored glass filter[J]. Appl. Phys. Lett., 1990, 57(3):229-230.doi:10.1063/1.103724
[8]	JABCZYN J K, AGNESI A, GUANDALINI A, et al.. Application of V³⁺: YAG crystals for Q-switching and mode-locking of 1.3-μm diode-pumped neodymium lasers[J]. Opt. Eng., 2001, 40(12):2802-2811.doi:10.1117/1.1418716
[9]	KELLER U, WEINGARTEN K J, KÄRTNER F X, et al.. Semiconductor saturable absorber mirrors(SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers[J]. IEEE J. Sel. Top. Quantum Electron., 1996, 2(3):435-453.doi:10.1109/2944.571743
[10]	SET S Y, YAGUCHI H, TANAKA Y, et al.. Laser mode locking using a saturable absorber incorporating carbon nanotubes[J]. J. Lightwave Technol., 2004, 22(1):51.doi:10.1109/JLT.2003.822205
[11]	RSCHIBLI T, MINOSHIMA K, KATAURA H, et al.. Ultrashort pulse-generation by saturable absorber mirrors based on polymer-embedded carbon nanotubes[J]. Opt. Express, 2005, 13(20):8025-8031.doi:10.1364/OPEX.13.008025
[12]	SCHMIDT A, RIVIER S, STEINMEYER G, et al.. Passive mode locking of Yb: KLuW using a single-walled carbon nanotube saturable absorber[J]. Opt. Lett., 2008, 33(7):729-731.doi:10.1364/OL.33.000729
[13]	CHO W, YIM J, CHOI S, et al.. Boosting the nonlinear optical response of carbon nanotube saturable absorbers for broadband mode-locking of bulk lasers[J]. Adv. Funct. Mater., 2010, 20(12):1937-1943.doi:10.1002/adfm.v20:12
[14]	WANG F, ROZHIN A G, SCARDACI V, et al.. Wideband-tuneable nanotube mode-locked fibre laser[J]. Nat. Nanotechnol., 2008, 3(12):738-742.doi:10.1038/nnano.2008.312
[15]	GEIM K, NOVOSELOV K S, et al.. The rise of graphene[J]. Nat. Materials, 2007, 6:183-191.doi:10.1038/nmat1849
[16]	CASTRO NETO A H, GUINEA F, PERES N M R, et al.. The electronic properties of grapheme[J]. Rev. Mod. Phys., 2009, 81(1):109-162.doi:10.1103/RevModPhys.81.109
[17]	BREUSING M, ROPERS C, ELSAESSER T, et al.. Ultrafast carrier dynamics in graphite[J]. Phys. Rev. Lett., 2009, 102(8):086809.doi:10.1103/PhysRevLett.102.086809
[18]	BONACCORSO F, SUN Z, HASAN T. Graphene photonics and optoelectronics[J]. Nat. Photonics, 2010, 4(9):611-22.doi:10.1038/nphoton.2010.186
[19]	ZHANG H, TANG D Y, ZHAO L M, et al.. Large energy mode locking of an erbium-doped fiber laser with atomic layer graphene[J]. Opt. Express, 2009, 17(20):17630-17635.doi:10.1364/OE.17.017630
[20]	TAN W D, SU C Y, KNIZE R J, et al.. Mode locking of ceramic Nd: yttrium aluminum garnet with graphene as a saturable absorber[J]. Appl. Phys. Lett., 2010, 96(3):031106.doi:10.1063/1.3292018
[21]	CHO W B, KIM J W, LEE H W, et al.. High-quality, large-area monolayer graphene for efficient bulk laser mode-locking near 1.25 μm[J]. Opt. Lett., 2011, 36(20):4089-4091.doi:10.1364/OL.36.004089
[22]	HERNANDEZ Y, NICOLOSI V, LOTYA M, et al.. High-yield production of graphene by liquid-phase exfoliation of graphite[J]. Nat. Nanotechnol., 2008, 3(9):563.doi:10.1038/nnano.2008.215
[23]	BOURLINOS A B, GEOGALILAS V, ZBORIL R, et al.. Pyrolytic formation and photoluminescence properties of a new layered carbonaceous material with graphite oxide-mimicking characteristics[J]. Carbon, 2009, 47(2):1841.https://www.sciencedirect.com/science/article/pii/S0008622308005873
[24]	XU J L, LI X L, WU Y Z, et al.. Graphene saturable absorber mirror for ultra-fast-pulse solid-state laser[J]. Opt. Lett., 2011, 36(10):1948-1950.doi:10.1364/OL.36.001948
[25]	XU J L, LI X L, HAO X P, et al.. Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser[J]. Appl. Phys. Lett., 2011, 99(26):261107.doi:10.1063/1.3672213
[26]	XU J L, LI X L, HE J L, et al.. Efficient graphene Q switching and mode locking of 1.34 μm neodymium lasers[J]. Opt. Lett., 2012, 37(13):2652-2654.doi:10.1364/OL.37.002652
[27]	BAEK I H, LEE H W, BAE S K, et al.. Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber[J]. Appl. Phys. Express, 2012, 5(3):032701.doi:10.1143/APEX.5.032701
[28]	KIM J W, CHOI S Y, JUNG B H, et al.. Applicability of graphene flakes as saturable absorber for bulk laser mode-locking[J]. Appl. Phys. Express, 2012, 6(6):032704.https://www.researchgate.net/publication/258748689_Applicability_of_Graphene_Flakes_as_Saturable_Absorber_for_Bulk_Laser_Mode-Locking
[29]	XU S C, MAN B Y, JIANG S Z, et al.. Watt-level passively Q-switched mode-locked YVO₄/Nd: YVO₄laser operating at 1.06 μm using graphene as a saturable absorber[J]. Opt. Laser Technol., 2014, 56(3):393-397.https://www.sciencedirect.com/science/article/pii/S0030399214003004
[30]	TOLSTIK N, SOROKIN E, SOROKINA I T. Graphene mode-locked Cr: ZnS laser with 41 fs pulse duration[J]. Opt. Express, 2014, 22(5):5564-5571.doi:10.1364/OE.22.005564
[31]	TOLSTIK N, POSPISCHIL A, SOROKIN E, et al.. Graphene mode-locked Cr: ZnS chirped-pulse oscillator[J]. Opt. Express, 2014, 22(6):7284-7289.doi:10.1364/OE.22.007284
[32]	XU S C, MAN B Y, JIANG S Z, et al.. Sapphire-based graphene saturable absorber for long-time working femtosecond lasers[J]. Opt. Lett., 2014, 39(9):2707-2710.doi:10.1364/OL.39.002707
[33]	XU S C, MAN B Y, JIANG S Z, et al.. Direct growth of graphene on quartz substrate as saturable absorber for femtosecond solid-state laser[J]. Laser Phys. Lett., 2014, 11(8):085801.doi:10.1088/1612-2011/11/8/085801
[34]	MA J, XIE G Q, LV P, et al.. Wavelength versatile graphene gold film saturable absorber mirror for ultra-broadband mode-locking of bulk lasers[J]. Sci. Rep., 2014, 4(6):6186.https://www.researchgate.net/publication/262581847_Wavelength-Versatile_Graphene-Gold_Film_Saturable_Absorber_Mirror_for_Ultra-Broadband_Mode-Locking_of_Bulk_Lasers
[35]	PANA S D, CUI L, LIU J Q, et al.. Passively Q-switched mode-locking Nd: GdVO₄laser with a chemically reduced graphene oxide saturable absorber[J]. Opt. Mater. Express, 2014, 38(20):42-45.https://www.sciencedirect.com/science/article/pii/S0030402615013807
[36]	HUANG Q J, JI W, JIANG S Z, et al.. Graphene absorber for passive mode-locking Nd: YVO₄laser[J]. Optik, 2015, 126(19):1844-1847.doi:10.1016/j.ijleo.2015.05.016
[37]	GAO S. Diode-end-pumped, passivelyQ-switched, dual-wavelength, Nd: YAG crystal laser with monolayer graphene as saturable absorber operating at 1319 and 1338 nm[J]. Can. J. Physiol., 2016, 94(13):389-392.
[38]	MA J, HUANG H T, NING K J, et al.. Generation of 30 fs pulses from a diode-pumped graphene mode-locked Yb: CaYAlO₄laser[J]. Opt. Lett., 2016, 41(5):890-893.doi:10.1364/OL.41.000890
[39]	LIN W M, DUAN X M, CUI Z, et al.. A passively Q-switched Ho: YVO₄laser at 2.05 μm with grapheme saturable absorber[J]. Appl. Sci, 2016, 6(5):128.https://www.researchgate.net/publication/224193471_Diode-pumped_passively_Q-switched_NdLu05Y05VO_4_laser_at_134_mm_with_Co2LaMgAl11O_19_as_the_saturable_absorber
[40]	CUI Z, CHEN Y, YAO B Q, et al.. Passively Q-switched Ho: YAG laser with multilayer graphene-based saturable absorber[J]. Chin. J. Lumin., 2016, 37(6):697.http://www.en.cnki.com.cn/Article_en/CJFDTotal-FGXB201606010.htm
[41]	CHO W B, CHOI S Y, ZHU C H, et al.. Graphene mode-locked femtosecond Cr²⁺: ZnS laser with ~300 nm tuning range[J]. Opt. Express, 2016, 24(18):20774-20780.doi:10.1364/OE.24.020774
[42]	LIN H Y, ZHAO M J, LIN H J, et al.. Graphene-oxide as saturable absorber for a 1342 nmQ-switched Nd: YVO₄laser[J]. Optik, 2017, 135(2):129-133.https://es.scribd.com/doc/38529519/Lasers-and-Coherent-Light-Sources
[43]	CANBAZ F, KAKENOV N, KOCABAS C, et al.. Generation of sub-20-fs pulses from a graphene mode-locked laser[J]. Opt. Express, 2017, 25(3):2834-2839.doi:10.1364/OE.25.002834
[44]	HASAN M Z, KANE C L, et al.. Colloquium:topological insulators[J]. Rev. Mod. Phys., 2010, 82(4):3045-3067.doi:10.1103/RevModPhys.82.3045
[45]	LIU J W, HSIEH T H, WEI P, et al.. Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator[J]. Nat. Mater., 2014, 13(2):178-183.doi:10.1038/nmat3828
[46]	TANG P H, ZHANG X Q, ZHAO C J, et al.. Topological Insulator: Bi₂Te₃saturable absorber for the passiveQ-switching operation of an in-band pumped 1645-nm Er: YAG ceramic laser[J]. IEEE Photonics J., 2013, 5(2):1500707.doi:10.1109/JPHOT.2013.2250494
[47]	YU H H, ZHANG H, WANG Y C, et al.. Topological insulator as an optical modulator for pulsed solid-state lasers[J]. Laser Photonics Rev., 2013, 7(6):77-83.doi:10.1002/lpor.201300084
[48]	WANG B L, YU H H, ZHANG H, et al.. Topological insulator simultaneously Q-switched dual-wavelength Nd: Lu₂O₃laser[J]. IEEE Photonics J., 2014, 6(3):1-7.http://ieeexplore.ieee.org/document/6807511/
[49]	HU M T, LIU J H, TIAN J R, et al.. Generation of Q-switched pulse by Bi₂Se₃topological insulator in Yb: KGW laser[J]. Laser Phys. Lett., 2014, 11(11):115806.doi:10.1088/1612-2011/11/11/115806
[50]	LI P X, ZHANG G J, ZHANG H, et al.. Q-switched mode-locked Nd: YVO₄laser by topological insulator Bi₂Te₃saturable absorber[J]. IEEE Photonic Tech. L., 2014, 26(19):5806.https://www.researchgate.net/publication/283525949_Q-Switched_and_Q-Switched_Mode-Locking_Operation_from_NdYVO_4_Laser_using_Reflective_MoS_2_Saturable_Absorber
[51]	XU B, WANG Y, PENG J, et al.. Topological insulator Bi₂Se₃based Q-switched Nd: LiYF₄nanosecond laser at 1313 nm[J]. Opt. Express, 2015, 23(6):7674-7680.doi:10.1364/OE.23.007674
[52]	JIA F Q, CHEN H, LIU P, et al.. Nanosecond-Pulsed, dual-wavelength passively Q-switched c-Cut Nd: YVO₄laser using a few-layer Bi₂Se₃saturable absorber[J]. IEEE J. Sel. Top. Quantum Electron., 2015, 21(1):369-374.doi:10.1109/JSTQE.2014.2346612
[53]	XU J L, SUN Y J, HE J L, et al.. Ultrasensitive nonlinear absorption response of large-size topological insulator and application in low-threshold bulk pulsed lasers[J]. Sci. Rep., 2015, 5(2):14856.https://www.researchgate.net/profile/Yan_Wang47/publication/282775286_Ultrasensitive_nonlinear_absorption_response_of_large-size_topological_insulator_and_application_in_low-threshold_bulk_pulsed_lasers/links/561db62e08ae50795afd830f.pdf
[54]	LIN Y Y, LEE P, XU J L, et al.. High-pulse-energy topological insulator Bi₂Te₃-based passive Q-switched solid-state laser[J]. IEEE Photonics J., 2016, 8(4):1-10.https://www.researchgate.net/publication/305037539_High-Pulse-Energy_Topological_Insulator_Bi2Te3-Based_Passive_Q-Switched_Solid-State_Laser
[55]	KUC A, ZIBOUCHE N, HEINE T, et al.. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS₂[J]. Phys. Rev. B, 2011, 83(24):245213.doi:10.1103/PhysRevB.83.245213
[56]	WANG K, WANG J, FAN J, et al.. Ultrafast saturable absorption of two-dimensional MoS₂nanosheets[J]. ACS. Nano, 2013, 7(10):9260-9267.doi:10.1021/nn403886t
[57]	CHEN B H, ZHANG X Y, WAN K, et al..Q-switched fiber laser based on transition metal dichalcogenides MoS₂, MoSe₂, WS₂, and WSe₂[J]. Opt. Express, 2015, 23(20):26723-26737.doi:10.1364/OE.23.026723
[58]	XU B, CHENG Y J, WANG Y, et al.. PassivelyQ-switched Nd: YAlO₃nanosecond laser using MoS₂as saturable absorber[J]. Opt. Express, 2014, 22(23):28934-28940.doi:10.1364/OE.22.028934
[59]	ZHAN Y, WANG L, WANG J Y, et al.. Yb: YAG thin disk laser passivelyQ-switched by a hydro-thermal grown molybdenum disulfide saturable absorber[J]. Laser Phys., 2015, 25(2):025901.doi:10.1088/1054-660X/25/2/025901
[60]	LOU F, ZHAO R W, HE J L, et al.. Nanosecond-pulsed, dual-wavelength, passivelyQ-switched ytterbium-doped bulk laser based on few-layer MoS₂saturable absorber[J]. Photon. Res., 2015, 3(2):A25-A29.doi:10.1364/PRJ.3.000A25
[61]	KONG L C, XIE G Q, YUAN P, et al.. PassiveQ-switching andQ-switched mode-locking operations of 2 μm Tm: CLNGG laser with MoS₂saturable absorber mirror[J]. Photon. Res., 2015, 3(2):A47-A50.doi:10.1364/PRJ.3.000A47
[62]	ZOU X, LENG Y X, LI Y Y, et al.. PassivelyQ-switched mode-locked Tm: LLF laser with a MoS₂saturable absorber[J]. Chin. Opt. Lett., 2015, 13(8):081405.doi:10.3788/COL
[63]	LIN T, SUN H, WANG X, et al. PassivelyQ-switched Nd: YAG laser with a MoS₂solution saturable absorber[J]. Laser Phys., 2015, 25(12):125805.doi:10.1088/1054-660X/25/12/125805
[64]	SUN Y J, XU J L, GAO S F, et al.. Wavelength-tunable, passivelyQ-switched Yb: Ca₃Y₂(BO₃)₄solid state laser using MoS₂saturable absorber[J]. Mater. Lett., 2015, 160(2):268-270.https://gc.science.nus.edu.sg/biblio/export/bibtex
[65]	SUN Y J, XU J L, ZHU Z J, et al.. Comparison of MoS₂nanosheets and hierarchical nanospheres in the application of pulsed solid-state lasers[J]. Opt. Mater. Express, 2015, 5(12):2924.doi:10.1364/OME.5.002924
[66]	WANG K, YANG K J, ZHANG X Y, et al. PassivelyQ-switched laser at 1.3 μm with Few-layered MoS₂saturable absorber[J]. IEEE J. Sel. Top. Quantum Electron., 2017, 23(1):1600205.https://gc.science.nus.edu.sg/biblio/export/bibtex
[67]	ZHAO W F, YU H, LIAO M Z, et al.. Large area growth of monolayer MoS₂film on quartz and its use as a saturable absorber in laser mode-locking[J]. Semicond. Sci. Tech., 2017, 32(2):025013.doi:10.1088/1361-6641/32/2/025013
[68]	KASSANI, KHAZAEINEZHAD R, JEONG H, et al.. All-fiber Er-doped Q-switched laser based on tungsten disulfide saturable absorber[J]. Opt. Mater. Express, 2015, 5(2):373-379.doi:10.1364/OME.5.000373
[69]	MAO D, WANG Y, MA C, et al.. WS₂mode-locked ultrafast fiber laser[J]. Sci. Rep., 2015, 5:7965.doi:10.1038/srep07965
[70]	ZHAO G, HAN S, WANG A Z, et al.. Chemical weathering exfoliation of atom-thick transition metal dichalcogenides and their ultrafast saturable absorption properties[J]. Adv. Funct. Mater., 2015, 25(33):5292-5299.doi:10.1002/adfm.201501972
[71]	HOU J, ZHAO G, WU Y Z, et al.. Femtosecond solid state laser based on tungsten disulfide saturable absorber[J]. Opt. Express, 2015, 23(21):27292-27298.doi:10.1364/OE.23.027292
[72]	WANG X, WANG Y G, DUAN L, et al.. Passively Q-switched Nd: YAG laser via a WS₂saturable absorber[J]. Opt. Commun., 2016, 367(2):234-238.https://www.sciencedirect.com/science/article/pii/S0030399212001375
[73]	TANG W J, WANG Y J, YANG K J, et al.. 1.36 W PassivelyQ-Switched YVO₄/Nd: YVO₄laser with a WS₂saturable absorber[J]. IEEE Photonic. Tech. L., 2017, 29(5):470-473.doi:10.1109/LPT.2017.2657325
[74]	CHURCHILL, HUGH O H, PABLO J H. Two-dimensional crystals:phosphorus joins the family[J]. Nat. Nanotechnol., 2014, 9(5):330-331.doi:10.1038/nnano.2014.85
[75]	ZHANG B, LOU F, ZHAO R, et al. Exfoliated layers of black phosphorus as saturable absorber for ultrafast solid-state laser[J]. Opt. Lett., 2015, 40(16):3691-3694.doi:10.1364/OL.40.003691
[76]	MA J, LU S, GUO Z, et al.. Few-layer black phosphorus based saturable absorber mirror for pulsed solid-state lasers[J]. Opt. Express, 2015, 23(17):22643-22648.doi:10.1364/OE.23.022643
[77]	WANG Z W, ZHAO R W, HE J L, et al.. Multi-layered black phosphorus as saturable absorber for pulsed Cr: ZnSe laser at 2.4 μm[J]. Opt. Express, 2016, 24(2):1598-1603.doi:10.1364/OE.24.001598
[78]	LU D Z, PAN Z B, ZHANG R, et al.. PassivelyQ-switched ytterbium-doped ScBO₃laser with black phosphorus saturable absorber[J]. Opt. Eng., 2016, 55(8):081312.doi:10.1117/1.OE.55.8.081312