High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique
doi:10.3788/CO.20181102.0190
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摘要:垂直腔面发射 器因其具有低阈值、低功耗、可实现高速调制等优势，广泛地应用于光通信和光互连等领域。寄生电容是影响 器的调制带宽的主要因素之一。本文通过采用低 k值的苯并环丁烯（BCB）平整技术有效地降低了垂直腔面发射 器的寄生电容。详细研究了BCB平整技术的最优工艺参数，为未来高速垂直腔面发射 器的制造技术提供参考。低 k值BCB平整垂直腔面发射 器在7 μm氧化孔径下3 dB小信号调制带宽可达15.2 GHz。Abstract:Vertical-cavity surface-emitting lasers(VCSELs) are widely used in short-reached optical interconnects and data communication links because of their low energy consumption and high modulation speed. Capacitance, as the parasitic parameters, affects the modulation bandwidth. In this paper, parasitic capacitance of VCSELs is reduced by using a low- kbenzocyclobutene(BCB) planarization technique. The detail BCB planarization technique has been discussed with optimal process parameters, which is useful for high-speed VCSEL fabrication. The small signal modulation bandwidth of the low- kBCB planarization VCSEL with 7 μm oxide aperture has been achieved to 15.2 GHz.
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Figure 1.(a) Simulation results of small signal modulation response for VCSELs with BCB and SiO2passivation. The parasitic cutoff frequency can reach to 17.8 GHz and 10.6 GHz for BCB and SiO2-passivated VCSEL, respectively. (b)The measured small signal modulation response for VCSELs with BCB and SiO2passivation. The -3dB bandwidth is 15.2 GHz and 9.85 GHz with the oxide aperture of 7 μm@6 mA, respectively, which indicates the parasitic capacitance limits the modulation frequency of the devices
Figure 2.(a) Schematic cross-sectional structure of high-speed VCSEL devices. (b)Top-view image of the high-speed VCSEL with coplanar GSG electrode structure
Figure 3.(a) Relationship between spin speed and film thickness of BCB. (b)Difference in aperture diameter(Δd) between lithography and BCB patterns at various exposure times. (c)Top-view images of the thin BCB layer before dry etching and (d)after dry etching
Figure 4.(a) Static P-I-V characteristics of BCB-planarized VCSELs with a 5 μm and 7 μm oxide aperture at room temperature. (b)Electrical-luminescence spectrum for the VCSEL at room temperature and current injection of 10.0 mA
Figure 5.Small-signal modulation response at room temperature at different bias currents for the BCB-planarized VCSEL with (a)5 μm and (b)7 μm oxide aperture
Figure 6.(a) Plot of the resonance frequency for the VCSELs with 5 μm and 7 μm oxide aperture versus the square root of the current injection above the threshold current at room temperature. (b)Damping rate versus resonance frequency square for the VCSELs with 5 μm and 7 μm oxide aperture at room temperature
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