[1] |
STILES E. New developments in IPG fiber laser technology[C]. Proceedings of the 5th International Workshop on Fiber Lasers, Dresden, Germany, 2009.
|
[2] |
VAISSIE L, STEELE T, RUDY P. High-power diode lasers advance pumping applications[J].Laser Focus World, 2008, 44(6).https://www.photonicsonline.com/doc/high-power-diode-lasers-advance-pumping-0001
|
[3] |
FAIRCLOTH B O. High-brightness high-power fiber coupled diode laser system for material processing and laser pumping[J].Proceedings of the SPIE, 2003, 4973:34-41.doi:10.1117/12.478365
|
[4] |
王鑫, 赵懿昊, 王翠鸾, 等.110 W高功率高亮度915 nm半导体 器光纤耦合模块研究[J].发光学报, 2017, 38(12):1654-1660.http://file.bwt-bj.com/9xxnm%20200W%20%e9%ab%98%e5%8a%9f%e7%8e%87%e9%ab%98%e4%ba%ae%e5%ba%a6%e5%8d%8a%e5%af%bc%e4%bd%93%e6%bf%80%e5%85%89%e5%99%a8(3).pdfWANG X, ZHAO Y H, WANG C L,et al.. 110 W high power and high brightness 915 nm fiber coupled laser diode module[J].Chinese Journal of Luminescence, 2017, 38(12):1654-1660.(in Chinese)http://file.bwt-bj.com/9xxnm%20200W%20%e9%ab%98%e5%8a%9f%e7%8e%87%e9%ab%98%e4%ba%ae%e5%ba%a6%e5%8d%8a%e5%af%bc%e4%bd%93%e6%bf%80%e5%85%89%e5%99%a8(3).pdf
|
[5] |
王立军, 宁永强, 秦莉, 等.大功率半导体 器研究进展[J].发光学报, 2015, 36(1):1-19.http://www.cnki.com.cn/Article/CJFDTotal-FGXB201501002.htmWANG L J, NING Y Q, QIN L,et al.. Development of high power diode laser[J].Chinese Journal of Luminescence, 2015, 36(1):1-19.(in Chinese)http://www.cnki.com.cn/Article/CJFDTotal-FGXB201501002.htm
|
[6] |
MORITA T, NAGAKURA T, TORⅡ K,et al.. High-efficient and reliable broad-area laser diodes with a window structure[J].IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4):1502104.doi:10.1109/JSTQE.2013.2245103
|
[7] |
CRUMP P, BLUME G, PASCHKE K,et al.. 20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96μm[J].Proceedings of the SPIE, 2009, 7198:719814.doi:10.1117/12.807263
|
[8] |
SCHULTZ C M, CRUMP P, WENZEL H,et al.. 11 W broad area 976 nm DFB laser with 58% power conversion efficiency[J].Electronics Letters, 2010, 46(8):580-581.http://ieeexplore.ieee.org/abstract/document/5451018
|
[9] |
CRUMP P, SCHULTZ C, PIETRZAK A,et al.. 975-nm high-power broad area diode lasers optimized for narrow spectral linewidth applications[J].Processongs of SPIE, 2010, 7583:75830N-10.doi:10.1117/12.839570
|
[10] |
PETRESCU-PRAHOVA I B, MODAK P, GOUTAIN E,et al.. High d/gamma values in diode laser structures for very high power[J].Proceedings of the SPIE, 2009, 7198:71981I-8.doi:10.1117/12.810041
|
[11] |
LOYO-MALDONADO V, BACCHIN G, ROBERTSON S,et al.. High reliability operation of 2 kW QCW 10-bar laser diode stacks at 808 nm[J].Proc. of SPIE, 2009, 7198:71981E-8.doi:10.1117/12.809321
|
[12] |
KNAUER A, ERBERT G, STASKE R,et al.. High-power 808 nm lasers with a super-large optical cavity[J].Semiconductor Science and Technology, 2005, 20(6):621-624.doi:10.1088/0268-1242/20/6/024
|
[13] |
AVRUTIN E A., RYYKIN B S. Thery and modelling of the power conversion efficiency of large optical cavity laser diodes[C]. 2015 High power diode lasers and systems conference(HPD), IEEE, Coventry, UK, 2015: 9-10.
|
[14] |
QIU B C, MCDOUGALL S D, LIU X F,et al.. Design and fabrication of low beam divergence and high kink-free power lasers[J].IEEE Journal of Quantum Electronics, 2005, 41(9):1124-1130.doi:10.1109/JQE.2005.853359
|
[15] |
TSAI C Y, TSAI CH Y, CHEN C H,et al.. Theoretical model for intravalley and intervalley free-carrier absorption in semiconductor lasers:beyond the classical drude models[J].IEEE Journal of Quantum Electronics, 1998, 34(3):552-559.doi:10.1109/3.661466
|
[16] |
CHILD G N, BRAND S, ABRAM R A. Intervalence band absorption in semiconductor materials[J].Semiconductor Science and Technology, 1986, 1:116-120.doi:10.1088/0268-1242/1/2/004
|
[17] |
CHUANG S L.Physics of Optoelectronic Devices[M]. New York:John Wiley & Son Inc, 1995.
|
[18] |
王文知, 井红旗, 祁琼, 等.大功率半导体 器可靠性研究和失效分析[J].发光学报, 2017, 38(2):165-169.http://ir.semi.ac.cn/handle/172111/28126WANG W Z, JJING H Q, QI Q,et al.. Reliability test and failure analysis of high power semicounductor laser[J].Chinese Journal of Luminescence, 2017, 38(2):165-169.(in Chinese)http://ir.semi.ac.cn/handle/172111/28126
|