[1] |
刘友强, 曹银花, 李景, 等. 加工用5 kW光纤耦合半导体 器[J].光学 精密工程, 2015, 23(5):1279-1287.http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201505011LIU Y Q, CAO Y H, LI J,et al.. 5 kW fiber coupling diode laser for laser processing[J].Opt. Precision Eng., 2015, 23(5):1279-1287.(in Chinese)http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201505011
|
[2] |
张建, 宁永强, 张建伟, 等.微型铷原子钟专用795 nm垂直腔表面发射 器[J].光学 精密工程, 2014, 22(1):50-57.http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201401009ZHANG J, NING Y Q, ZHANG J W,et al.. 795 nm VCSELs for 87Rb based miniaturized atomic clock[J].Opt. Precision Eng., 2014, 22(1):50-57.(in Chinese)http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201401009
|
[3] |
徐华伟, 宁永强, 曾玉刚, 等.852 nm半导体 器量子阱设计与外延生长[J].光学 精密工程, 2013, 21(3):590-597.http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201303008XU H W, NING Y Q, ZENG Y G,et al.. Design and epitaxial growth of quantum-well for 852 nm laser diode[J].Opt. Precision Eng., 2013, 21(3):590-597.(in Chinese)http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201303008
|
[4] |
ZHANG Z, ZHENG H, TIAN Y,et al.. Stable scanning of dressing fields on multiwave mixing in optical ring cavity[J].Quantum Electronics of IEEE Journal, 2014, 50(7):575-580.doi:10.1109/JQE.2014.2327015
|
[5] |
吴涛, 郭栓银.980 nm高功率锥形 器巴条的制备及光电特性[J]. 与光电子学展, 2016(4):138-143.WU T, GUO SH Y. Fabrication and electro-optic properties of 980 nm high-power tapered laser bar[J].Laser&Optoelectronics Progress, 2016(4):138-143.(in Chinese)
|
[6] |
SUMP B, KLEHR A, VU T N,et al.. 975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications[C]. Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers ⅩⅣ, 2015: 93821k.
|
[7] |
CHRISTENSEN M, HANSEN A K, NOORDEGRAAF D,et al.. Modulation of frequency doubled DFB-tapered diode lasers for medical treatment[C]. Proc. SPIE 10088, Nonlinear Frequency Generation and Conversion: Materials and Devices ⅩⅥ, 2017: 100881A.
|
[8] |
TIMMERMANN A, MEINSCHIEN J, BARTOSCHEWSKI D. Next generation high-brightness diode lasers offer new industrial applications[C]. Proc. SPIE 6876, High Power Diode Laser Technology and Applications Ⅵ, 2008: 68760U.
|
[9] |
HANSEN A K, TAWFIEQ M, JENSEN O B,et al.. Concept for power scaling second harmonic generation using a cascade of nonlinear crystals[J].Optics Express, 2015, 23(12):15921-15934.doi:10.1364/OE.23.015921
|
[10] |
李景, 邱运涛, 曹银花, 等.高亮度锥形半导体 器[J].发光学报, 2016, 37(8):990-995.http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012LI J, QIU Y T, CAO Y H,et al.. High brightness tapered diode laser[J].Chinese Journal of Luminescence, 2016, 37(8):990-995.(in Chinese)http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012
|
[11] |
杨晔, 刘云, 秦莉, 等.850 nm高亮度锥形半导体 器的光电特性[J].发光学报, 2011, 32(6):593-597.http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012YANG Y, LIU Y, QIN L,et al.. Electro-optic properties of 850nm high-brightness tapered lasers[J].Chinese Journal of Luminescence, 2011, 32(6):593-597.(in Chinese)http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012
|
[12] |
黄海华, 刘云, 杨晔, 等.850 nm锥形半导体 器的温度特性[J].中国光学, 2013, 6(2):201-207.//www.illord.com/CN/abstract/abstract8898.shtmlHUANG H H, LIU Y, YANG Y,et al.. Temperature characteristics of 850 nm tapered semiconductor lasers[J].Chinese Optics, 2013, 6(2):201-207.(in Chinese)//www.illord.com/CN/abstract/abstract8898.shtml
|
[13] |
李璟, 刘媛媛, 马骁宇.电极分离的980 nm锥形 器的研制[J].半导体学报, 2007, 28(8):1302-1306.http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=bdtxb200708026LI J, LIU Y Y, MA X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J].Chinese Journal of Semiconductors, 2007, 28(8):1302-1306.(in Chinese)http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=bdtxb200708026
|
[14] |
ADAMIEC P, SUMPF B, FEISE D,et al.. Twin-contact 645-nm tapered laser with 500-mW output power[J].IEEE Photonics Technology Letters, 2009, 21(4):236-238.doi:10.1109/LPT.2008.2010509
|
[15] |
MICHEL N, ODRIOZOLA H, KWOK C H,et al.. High modulation efficiency and high power 1060 nm tapered lasers with separate contacts[J].Electronics Letters, 2009, 45(2):103-104.doi:10.1049/el:20093298
|
[16] |
WALTHER M, KIEFER R. Improved beam quality for high-power tapered laser diodes with LMG(low-modal-gain) epitaxial layer structures[C]. Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared Ⅱ, 1998: 72-79.
|
[17] |
DITTMAR F, SUMPF B, FRICKE J,et al.. High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality ofM2=1.9 atP=4.4 W[J].IEEE Photonics Technology Letters, 2006, 18(4):601-603.doi:10.1109/LPT.2006.870152
|
[18] |
TIJERO J M G, ODRIOZOLA H, BORRUEL L,et al.. Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J].IEEE Photonics Technology Letters, 2007, 19(20):1640-1642.doi:10.1109/LPT.2007.905083
|
[19] |
KRAKOWSKI M M, AUZANNEAU S C, CALLIGARO M,et al.. High-power and high-brightness laser diode structures at 980 nm using Al-free materials[C]. Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, 2002: 80-91.
|
[20] |
GUO R, ZHENG J, ZHANG Y,et al.. Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers[J].Science Bulletin, 2015, 60(11):1026-1032.doi:10.1007/s11434-015-0807-y
|
[21] |
MA X, QU H, ZHAO P,et al.. 980 nm tapered lasers with photonic crystal structure for low vertical divergence[C]. Proc. SPIE 10019, Optoelectronic Devices and Integration Ⅵ, 2016: 1001907.
|
[22] |
周旭彦, 赵少宇, 马晓龙, 等.低垂直发散角高亮度光子晶体半导体 器[J].中国 , 2017, 44(2):0201010.http://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ201702011.htmZHOU X Y, ZHAO SH Y, MA X L,et al.. Low vertical divergence angle and high brightness photonic crystal semiconductor laser[J].Chinese Journal of Laser, 2017, 44(2):0201010.(in Chinese)http://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ201702011.htm
|
[23] |
HUANG S S, ZHANG Y, LIAO Y P,et al.. High-power single-spatial-mode gasb tapered laser around 2.0μm with very small lateral beam divergence[J].Chinese Physics Letters, 2017, 34(8):084202.doi:10.1088/0256-307X/34/8/084202
|
[24] |
LI Y, WANG J, YANG N,et al.. The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers[J].Optics Express, 2013, 21(13):15998-16006.doi:10.1364/OE.21.015998
|
[25] |
徐天鸿, 姚辰, 万文坚, 等.锥形太赫兹量子级联 器输出功率与光束特性研究[J].物理学报, 2015, 64(22):224212.http://d.old.wanfangdata.com.cn/Periodical/wlxb201522001XU T H, YAO CH, WAN W J,et al.. Analyses of the output power and beam quality of the tapered terahertz quantum cascade lasers[J].Acta Physica Sinica, 2015, 64(22):24212.(in Chinese)http://d.old.wanfangdata.com.cn/Periodical/wlxb201522001
|
[26] |
KAUNGA-NYIRENDA S N, BULL S, LIM J J,et al.. Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating[J].IET Optoelectronics, 2014, 8(2):99-107.doi:10.1049/iet-opt.2013.0082
|
[27] |
FRICKE J, WENZEL H, MATALLA M,et al.. 980-nm DBR lasers using higher order gratings defined by i-line lithography[J].Semiconductor Science&Technology, 2005, 20(11):1149-1152.http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=bd37b98e37eaf5f64420bab2aa826bba
|
[28] |
HASLER K H, SUMPF B, ADAMIEC P,et al.. 5-w DBR tapered lasers emitting at 1060 nm with a narrow spectral linewidth and a nearly diffraction-limited beam quality[J].IEEE Photonics Technology Letters, 2008, 20(19):1648-1650.doi:10.1109/LPT.2008.2002744
|
[29] |
SUMPF B, ADAMIEC P, FRICKE J,et al.. 1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality[C]. Proc. SPIE 7230, Novel In-Plane Semiconductor Laser ⅤⅢ, 2009: 72301E.
|
[30] |
MVLLER A, FRICKE J, BUGGE F,et al.. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm[J].Applied Physics B, 2016, 122(4):87.doi:10.1007/s00340-016-6360-9
|
[31] |
MVLLER A, ZINK C, FRICKE J,et al.. 1030 nm DBR tapered diode laser with up to 16 W of optical output power[C]. Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers ⅩⅥ, 2017: 101231B.
|
[32] |
MVLLER A, FRICKE J, BROX O,et al.. Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides[J].Semiconductor Science&Technology, 2016, 31(12):125011.
|
[33] |
PASCHKE K, BLUME G, BROX O,et al.. Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness[C]. Proc. SPIE 9348, High-Power Diode Laser Technology and Applications ⅩⅢ, 2015: 93480X.
|
[34] |
VIHERI L J, KEL J M, AHO A,et al.. High-power 1550 nm tapered DBR lasers fabricated using soft UV-nanoimprint lithography[C]. Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 2016: 97330Q.
|
[35] |
LIU L, QU H W, WANG Y F,et al.. High-brightness single-mode double-tapered laser diodes with laterally coupled high-order surface grating[J].Optics Letters, 2014, 39(11):3231-3234.doi:10.1364/OL.39.003231
|
[36] |
YAO C, XU T H, WAN W J,et al.. Single-mode tapered terahertz quantum cascade lasers with lateral gratings[J].Solid-State Electronics, 2016, 122:52-55.doi:10.1016/j.sse.2016.04.008
|
[37] |
YEO C I, JANG S J, YU J S,et al.. 1.3μm laterally tapered ridge waveguide dfb lasers with second-order cr surface gratings[J].IEEE Photonics Technology Letters, 2010, 22(22):1668-1670.
|
[38] |
BECKER S, SCHEUERMANN J, WEIH R,et al.. Laterally coupled DFB interband cascade laser with tapered ridge[J].Electronics Letters, 2017, 53(11):747-748.
|
[39] |
WEIH R, NAHLE L, HOFLING S,et al.. Single mode interband cascade lasers based on lateral metal gratings[J].Applied Physics Letters, 2014, 105(7):071111.doi:10.1063/1.4893788
|
[40] |
JIA Z W, WANG L J, TAN S,et al.. Improvement of buried grating DFB quantum cascade lasers by small-angle tapered structure[J].IEEE Photonics Technology Letters, 2017, 29(10):783-785.doi:10.1109/LPT.2017.2681127
|