Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film
doi:10.3788/CO.20191202.0371
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摘要:为了明确超快 损伤典型成像探测器膜层结构的物理机制，对飞秒脉冲 辐照硅基多层膜的损伤特性，以及各种损伤效应对应的 能量通量范围和阈值条件进行研究。利用波长为800 nm、脉冲宽度为100 fs的脉冲 和金相显微镜研究了硅基多层膜在不同 能量通量和不同脉冲累积下的损伤效应。在能量通量为1.01~24.7 J/cm 2的 单脉冲辐照下， 作用区域可观察到氧化/无定形化、非热烧蚀和 诱导等离子体烧蚀所引起的表面损伤，其损伤效应与 能量通量有明显联系， 作用区域尺寸随能量通量线性增大。在2.42 J/cm 2到24.7 J/cm 2 能量通量范围内，可在辐照表面观察到 诱导压力导致的多层损伤，损伤概率随 能量通量的增加由1%增大到51%。在 能量通量为1.01 J/cm 2的连续多脉冲辐照下，烧蚀区域尺寸几乎不变，但烧蚀深度逐渐增加，其多层损伤机制为表面损伤的累积效应。通过单脉冲损伤实验数据拟合计算确定，飞秒 诱导硅基多层膜表面损伤阈值为0.543 J/cm 2，应力多层损伤阈值为2.16 J/cm 2。低 能量通量（≤ 1.01 J/cm 2）多脉冲辐照累积作用同样可造成硅基多层膜深层损伤。Abstract:In order to understand the ultrafast laser-induced damage mechanisms of typical imaging sensor's film structures, the damage characteristics of Si-based multi-layer films irradiated by a femtosecond pulsed laser were investigated, and the laser pulse fluence ranges and threshold conditions corresponding to various damage phenomena were evaluated. Si-based multi-layer films that were similar in structure of CCD were prepared by electron beam deposition. The damage characteristics of these films irradiated by a femtosecond pulsed laser with wavelength of 800 nm and pulse width of 100 fs under different pulse fluences and numbers were investigated using a metallurgical microscope. Experimental results showed that the laser-affected zone size increased linearly with pulse fluence in the range of 1.01 to 24.7 J/cm 2. Surface damage caused by oxidation/amorphization, non-thermal ablation, and laser-induced plasma ablation could be observed in the laser irradiated zone, which tightly depended on the pulse fluence. Multi-layer damage could be observed and the damage probability increased from 1% to 51% in the pulse fluence range from 2.42 to 24.7 J/cm 2. Irradiated by sequent pulses at a fluence of 1.01 J/cm 2, the laser affected zone remained almost unchanged and the ablated depth increased with the pulse number. From the single pulse damage experiment data, the femtosecond pulse laser-induced surface damage threshold was evaluated to be 0.543 J/cm 2and laser-induced multi-layer stress damage threshold was linearly fitted to be 2.16 J/cm 2. Sequent pulse irradiation with low fluence(≤ 1.01 J/cm 2) also could lead to deep damage on the multi-layer film.
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Key words:
- laser ablation/
- laser damage/
- Si-based multi-layer film/
- damage threshold
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图 2飞秒 诱导损伤的实验装置示意图，图中包括格兰棱镜(G)、半波片(HWP)、分束镜(BS)、功率计(PM)、离轴抛面反射镜(L)、平移台(TS)和样品(S)
Figure 2.Schematic of femtosecond laser-induced damage experiment setup, including a Glan prism(G), a half wave plate(HWP), a beam splitting mirror(BS), a power meter(PM), an off-axis parabolic mirror(L), a translation stage(TS) and a sample(S)
图 3能量密度为(a)1.34 J/cm2和(b)11.6J/cm2的单脉冲 辐照硅基多层膜显微图
Figure 3.Micrograph of Si-base multi-layer film irradiated by femtosecond single-pulse laser with energy densities of (a)1.34 J/cm2and (b)11.6 J/cm2
图 6应力损伤概率随 能量通量的变化规律
Figure 6.Stress-induced damage probability varies with pulse fluence
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