具有浅刻蚀光栅的785 nm 半导体金宝搏188软件怎么用
器

岳钰新; 邹永刚; 范杰; 付曦瑶; 张乃宇; 宋英民; 黄卓尔; 马晓辉

doi:10.37188/CO.EN-2024-0019

具有浅刻蚀光栅的785 nm 半导体金宝搏188软件怎么用器

长春理工大学大功率半导体金宝搏188软件怎么用器国家重点实验室, 中国长春 130022

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出版历程
- 收稿日期: 2024-06-26
- 录用日期: 2024-08-22
- 网络出版日期: 2025-01-22

785 nm semiconductor laser with shallow etched gratings

doi: 10.37188/CO.EN-2024-0019

State Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

Funds: Supported by This work was financially supported by the Jilin Science and Technology Development Plan (No. 20210201030GX), the Science and Technology Innovation Outstanding Team Project of Jilin Province (No. 20220508138RC); The Natural Science Foundation of Chongqing (No. CSTB2022NSCQ-MSX0889, No. CSTB2022NSCQ-MSX0401).

More Information

Author Bio:
YUE Yu-xin is a Ph.D. candidate, currently pursuing his Ph.D. degree at the State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology. His main research interests include device design and packaging of semiconductor lasers

ZOU Yong-gang (1982—), male, researcher, Changchun University of Science and Technology. received his Ph.D. degree from Jilin University in 2009, majoring in condensed matter physics. He is mainly engaged in the research of optoelectronics technology and application. E-mail: zouyg@cust.edu.cn

MA Xiao-hui, professor, doctoral supervisor, is the director of the State Key Laboratory of High Power Semiconductor Laser at Changchun University of Science and Technology. He is the overall expert of “Strategic Advanced Electronic Materials” of National Key R & D Program, the chief scientist of “173” project of Military Science and Technology Commission, the director of Optical Engineering Society of China, the member of National Optoelectronic Measurement Standardized Technical Committee, and the Distinguished Professor of Changbaishan Scholars of Jilin Province. He is also a special professor of ChangbaishanScholars in Jilin Province. His main research direction is optoelectronic technology and application. E-mail: mxh@cust.edu.cn

Corresponding author: zouyg@cust.edu.cn; mxh@cust.edu.cn

摘要

摘要:
我们提出了一种新型 785 nm 半导体金宝搏188软件怎么用器件。在 P 侧外延中加入的薄限制层和模式扩展层结构，两者对光栅刻蚀深度的调节有很大影响。P 侧波导层的减薄使得光场偏向 N 侧包层。通过协调限制层的束缚效应，可以调节 P 侧的光限制因子。另一方面，模式扩展层的引入促进了 P 侧限制层上模式的扩展。这两个因素都有助于减少光栅蚀刻深度。与已报道的对称波导外延结构相比，新结构在确保足够反射强度和维持谐振的同时，大大减少了光栅的蚀刻深度。此外，为了提高器件的输出性能，还对新的外延结构进行了优化。在传统外延结构的基础上，增加了能量释放层和电子阻挡层，以提高电子复合效率。这种改进后的结构虽然增益面积较小，但输出性能却与对称波导相当。
- 表面光栅 /
- 蚀刻深度 /
- 外延结构 /
- 复合效率 /
- 增益区
Abstract:
A new type of 785 nm semiconductor laser device has been proposed. The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth. Thinning of the P-side waveguide layer makes the light field bias to the N-side cladding layer. By coordinating the confinement effect of the cladding layer, the light confinement factor on the p-side is regulated. On the other hand, the introduction of a mode expansion layer facilitates the expansion of the mode profile on the P side cladding layer. Both these factors contribute positively to reducing the grating etching depth. Compared to the reported epitaxial structures of symmetric waveguides, the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance. Moreover, to improve the output performance of the device, a new epitaxial structure has been optimized. Based on the traditional epitaxial structure, an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency. This improved structure has an output performance comparable to that of a symmetric waveguide, despite being able to have a smaller gain area.
- surface grating /
- etching depth /
- epitaxial structure /
- recombination efficiency /
- gain area

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Figure 1. a) Epitaxial structure of the traditional chip b) epitaxial structure of the new chip c)structure of the DBR laser d) gain spectrum

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Figure 2. Mode field distribution for different p-side waveguide thicknesses

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Figure 3. (a) δn versus Γ (b) Waveguide refractive index, waveguide width versus divergence angle

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Figure 4. (a) The relationship among different waveguide thicknesses and divergence angle and output power (b) Comparison of current density in the horizontal direction at different etching depths

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Figure 5. (a) Refractive index of electron-blocking layer (b) output power at different components on the EBL

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Figure 6. a) Light field distribution b) Energy band diagram of different aluminum components

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Figure 7. Comparison of output power of different structures

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Figure 8. a) Comparison of output power and b) electron concentration of different waveguide structures

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Figure 9. Effect of different Al components of ERL on output power and light confinement factor

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Figure 10. Simulated mode distribution for different Al contents. Inset shows their optical confinement factor on P-side and divergence angle

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Figure 11. The refractive index and light field are distributed in the transverse direction

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Figure 12. a) Refractive index distribution of the grating b) The relationship between different etching depths and reflectivity

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Table 1. Parameter of each layer

Number	Layer	Material	Thickness/μm	Doping/m⁻³
1	Top-cladding	Al_0.45Ga_0.55As	0.2	1e25
2	Mode expansion	Al_0.35Ga_0.65As	0.1	1e25
3	Lower-cladding	Al_0.45Ga_0.55As	0.1	1e25
4	waveguide	Al_0.45-0.4GaAs	0.08	none
5	Waveguide (EBL)	Al_0.42Ga_0.58As	0.02	none
6	barrier	Al_0.32Ga_0.68As	0.015	none
7	well	GaAs_0.83P_0.17	0.007	none
8	barrier	Al_0.32Ga_0.68As	0.015	none
9	Waveguide (ERL)	Al_0.3Ga_0.7As	0.1	none
10	waveguide	Al_0.4-0.45GaAs	0.8	none
11	cladding	Al_0.45Ga_0.55As	0.4	1e25

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