Abstract:
A new type of 785nm semiconductor laser device has been proposed. The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth. Thinning of the P-side waveguide layer makes the light field bias to the N-side cladding layer. By coordinating the confinement effect of the cladding layer, the light confinement factor on the p-side is regulated. Moreover, to improve the output performance of the device, a new epitaxial structure has been optimized.
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