Volume 14Issue 1
Jan. 2021
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DONG Zhuo, CHEN Jie, ZHU Yi-fan, YANG Jie, WANG Zhong-chang, ZHANG Kai. Room-temperature terahertz photodetectors based on black arsenic-phosphorus[J]. Chinese Optics, 2021, 14(1): 182-195. doi: 10.37188/CO.2020-0175
Citation: DONG Zhuo, CHEN Jie, ZHU Yi-fan, YANG Jie, WANG Zhong-chang, ZHANG Kai. Room-temperature terahertz photodetectors based on black arsenic-phosphorus[J].Chinese Optics, 2021, 14(1): 182-195.doi:10.37188/CO.2020-0175

Room-temperature terahertz photodetectors based on black arsenic-phosphorus

doi:10.37188/CO.2020-0175
Funds:Supported by National Natural Science Foundation of China (No. 61927813,No. 61875223,No. 61922082); National Key R & D Program of China (No. 2016YFE015700)
More Information
  • Author Bio:

    DONG Zhuo (1994—), male, born in Yingcheng City, Hubei province, Ph. D candidate, School of Nano-Tech and Nano-Bionics, University of Science and Technology of China. He got his bachelor's degree from Hubei University in 2017. His research interests are room-temperature terahertz photodetectors based on two-dimensional materials. E-mail:zdong2018@sinano.ac.cn

    ZHANG Kai (1983—), male, born in Xiantao City, Hubei province Ph. D, Professor, Nano-Tech and Nano-Bionics, Chinese Academy of Science. He got his Ph. D. from Hong Kong Polytechnic University in 2011. His research interests are in the areas of narrow-gap two-dimensional (2D) materials and devices, with research activities ranging from the exploration and controllable growth of narrow-gap 2D semiconductors (such as black phosphorus) and topological materials, as well as the development of infrared & terahertz lasers and photodetectors. E-mail:kzhang2015@sinano.ac.cn

  • Corresponding author:zhongchang.wang@inl.int;kzhang2015@sinano.ac.cn
  • Received Date:30 Sep 2020
  • Rev Recd Date:13 Oct 2020
  • Available Online:25 Dec 2020
  • Publish Date:25 Jan 2021
  • Terahertz technology is indispensable in plenty of fields due to the abundant interactions between terahertz waves and matter. In order to meet the needs of terahertz applications, the development of highly sensitive and portable terahertz detectors based on distinctive physical mechanisms and various materials with excellent properties are urgently required. Black arsenic-phosphorus is a novel two-dimensional material that has a tunable band gap and transport characteristics with varying chemical composition, which has gained widespread interest in optoelectronic applications. Recent research on b-As xP 1-xmainly focuses on infrared detection, while the detection of terahertz has not yet been applied. Herein, an antenna-coupled terahertz detector based on exfoliated multilayer black arsenic-phosphorus is demonstrated. The terahertz response performance of the detector reflects two different mechanisms, which have a competitive relationship in the detection process. In particular, the detection mechanism can be tailored by varying the chemical composition of black arsenic-phosphorus. By balancing the band gap and carrier mobility, a responsivity of over 28.23 V/W and a noise equivalent power of less than 0.53 nW/Hz 1/2are obtained at 0.37 THz. This implies that black arsenic-phosphorus has great potential in terahertz technology.

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