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吉 沈, Viacheslav V. Zabudsky, Wei-jing Chang, Qi-yue Na, Yun-fei Jian, Oleg V. Rikhalsky, Oleksandr G. Golenkov, Volodymyr P. Reva. CCD/EMCCD Photoelectronic Parameter Test System: design and use[J]. Chinese Optics. doi: 10.37188/CO.EN.2023-0016
Citation: 吉 沈, Viacheslav V. Zabudsky, Wei-jing Chang, Qi-yue Na, Yun-fei Jian, Oleg V. Rikhalsky, Oleksandr G. Golenkov, Volodymyr P. Reva. CCD/EMCCD Photoelectronic Parameter Test System: design and use[J].Chinese Optics.doi:10.37188/CO.EN.2023-0016

CCD/EMCCD Photoelectronic Parameter Test System: design and use

doi:10.37188/CO.EN.2023-0016
  • Received Date:04 Jul 2023
  • Accepted Date:28 Aug 2023
  • Rev Recd Date:15 Aug 2023
  • Available Online:12 Sep 2023
  • This article describes design and using of the developed equipment that intended for measuring of CCD and EMCCD (electron multiplying charge-coupled device) chips photoelectrical parameters. Test system provides measurements of dark currents, responsivity of output amplifier, efficiency of charge transfer, charge capacity and other parameters testing in automatic and manual mode. The system can be configured for measurements of different format and architecture CCD/EMCCD both on wafer and in package. The developed equipment was used for 576 × 288, 640 × 512, 768 × 576, 1024 × 1024, 1280 × 1024 CCD and EMCCD chip testing and sorting.

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      沈阳化工大学材料科学与工程学院 沈阳 110142

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