Volume 3Issue 5
Nov. 2010
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WANG Li-ping. Optical system of extreme ultraviolet lithography[J]. Chinese Optics, 2010, 3(5): 452-461.
Citation: WANG Li-ping. Optical system of extreme ultraviolet lithography[J].Chinese Optics, 2010, 3(5): 452-461.

Optical system of extreme ultraviolet lithography

  • Received Date:17 May 2010
  • Rev Recd Date:25 Jul 2010
  • Publish Date:25 Oct 2010
  • Extreme UltraViolet Lithography(EUVL) has been regarded as a promising lithographic technology following ArF immersion lithography for the 32 nm hp node and beyond and the EUV optical exposure system consisting of a illumination system and a projection system is a key part in the EUVL. This paper introduces several kinds of EUVL tools at home and abroad and gives their optical specifications. Then, it summarizes the principles of optical design for EUVLs and reviews the design requirements for the illumination and projection systems, respectively. Finally, it describes the design methods of illumination and projection systems in EUVLs, especially, it discusses a aspheric 6-mirror projection optics which is suitable for 22 nm EVUL technology and gives the improvement method of illumination uniformity for the illumination system.

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