Optical system of extreme ultraviolet lithography

[1] HUDYMA R M. An overview of optical systems for 30 nm resolution lithography at EUV wavelengths[J]. SPIE,2002,4832:137-148. [2] WOODA O,KOAYB C-S,PETRILLOB K. EUV Lithography at the 22 nm technology node[J]. SPIE,2010,7636:76361M/1-76361M/8. [3] BAKSHI V. EUV Lithography[M]. Bellingham:SPIE Press,2009. [4] JEWELL T E. Reflctive system design study for soft X-ray projection lithography[J]. J.Vac.Sci.Technol.,1990,B8(6):1519-1523. [5] GOLDSMITHA J E M,BARRA P K,BERGERA K W. Recent advances in the Sandia EUV l0x microstepper[J]. SPIE,1998,3331:11-19. [6] KURIHARA K. Two-mirror telecentric optics for soft X-ray reduction lithography[J]. J. Vac. Sci. Technol.,1991,B9(6):3198-3192. [7] JEWELL T E. Two aspheric mirror system design for SXPL . OSA Proceedings on Soft X-Ray Projection Lithography .Monterey,California,May 10-12,1993,18:71-74. [8] GOLDSMITH J E M,BERGER K W,BOZMAN D R, et al.. Sub-100-nm imaging with an EUV 10x microstepper[J]. SPIE,1999,3676,:264-271. [9] 金春水,王占山,曹健林. 软X射线投影光刻原理装置的设计[J]. 光学 精密工程 ,2000,8(1):66-70. JIN CH SH,WANG ZH SH,CAO J L. Development of elementary arrangement for soft X-ray projeetion lithography[J]. Opt. Precision Eng.,2000,8(1):66-70.(in Chinese) [10] TICHENOR D A,RAY-CHAUDHURI A K,REPLOGL W C, et al.. System integration and performance of the EUV engineering test stand[J]. SPIE,2001,4343:19-37. [11] BOOTH M,BRIOSO O,BRUNTON A. High-resolution EUV imaging tools for resist exposure and aerial image monitoring[J]. SPIE,2005,575:178-89. [12] SOUFLI R,HUDYMA R M,SPILLER E, et al.. Sub-diffraction-limited multilayer coatings for the 0.3 numerical aperture micro-exposure tool for extreme ultraviolet lithography[J]. Appl. Opt.,2007,46:3736-3746. [13] GOLDBERG K A,NAULLEAU P P,DENHAM P E, et al.. At-wavelength alignment and testing of the 0.3-NA MET optic[J]. J. Vac. Sci. Technol.,2005,B22(6):2956-2961. [14] ROBERTSL J M,BACUITAL T,BRISTOLL R L. One small step:world's first integrated EUVL process line[J]. SPIE,2005,5751:64-77. [15] NAULLEAU P P,ANDERSON C N,Dean K, et al.. Recent results from the Berkeley 0.3-NA EUV microfield exposure tool[J]. SPIE,2007,6517:65170V/1-65170V/8. [16] NAULLEAU P P,ANDERSON C N,BACLEA-AN L-M, et al.. The SEMATECH Berkeley microfield exposure tool:learning at the 22-nm node and beyond[J]. SPIE,2009,7271:72710W/1-72710W/11. [17] OIZUMI H,TANAKA Y,KUMASAKA F, et al.. Lithographic performance of high-numerical-aperture(NA=0.3) EUV Small-Field Exposure Tool(HINA)[J]. SPIE,2005,5751:102-105. [18] UZAWA S,KUBO H,MIWA Y, et al.. Path to the HVM in EUVL through the development and evaluation of the SFET[J]. SPIE,2007,6517:651708/1-651708/10. [19] MEILING H,BOON E,BUZING N, et al.. Performance of the full-field EUV systems[J]. SPIE,2008,6921:69210L/1-69210L/13. [20] MEILING H,BUZING N,CUMMING S K, et al.. EUVL systems:moving towards production[J]. SPIE,2009,7271:727102/1-727102/15. [21] HARNED N,GOETHALS N,GROENEVELD R, et al.. EUV lithography with the Alpha Demo Tools:status and challenges[J]. SPIE,2007,6517:651706/1-651706/12. [22] WAGNER C,HARNEDA N,KUERZB P, et al.. EUV into production with ASML's NXE platform[J]. SPIE,2010,7636:76361H/1-76361H/16. [23] MIURA T,MURAKAMI K,SUZUKI K, et al.. Nikon EUVL development progress summary[J]. SPIE,2006,6151:1-10. [24] MIURA T,MURAKAMI K,KAWAINIKON H, et al.. EUVL development progress update[J]. SPIE,2010,7636:76361G/1-76361G/16. [25] MORI I,SUGA O,TANAKA H, et al.. Selete's EUV program: progress and challenges[J]. SPIE,2008,6921:692102/1-692102/12. [26] GOLDSTEIN M,HUDYMA R,NAULLEAU P, et al.. Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography[J]. Opt. Lett.,2008,33(24):2995-2997. [27] SOUFLI R,SPILLER E,SCHMIDT M A, et al.. Multilayer optics for an extreme ultraviolet lithography tool with 70 nm resolution[J]. SPIE,2001,4343:51-59. [28] CHEN L,MICHAEL,DESCOUR R, et al.. Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics[J]. Appl. Opt.,2001,40(1):129-135. [29] MICHALOSKI P. Requirements and designs of illuminators for microlithography[J]. SPIE,2004,5525:1-10. [30] HAGA T,KINOSHITA H. Illumination system for extreme ultraviolet lithography[J]. J. Vac. Sci. Technol. B,1995,13(6):2914-2918. [31] KOMATSUDA H. Novel illumination system for EUVL[J]. SPIE,2000,3997:765-776. [32] BORN M,WOLF E. Principles of Optics 7th Edition[M]. Cambridge:Cambridge University Press,1999. [33] HUDYMA R M. High numerical aperture projection system for extreme ultraviolet projection lithography:US,6072852 .2000-06-00. [34] CHAPMAN H N,HUDYMA R M,SHAFER D R, et al.. Reflective optical imaging system with balanced distortion:US,5973826 .1999-10-26. [35] HUDYMA R M. High numerical aperture ring field projection system for extreme ultraviolet projection lithography:US,6033079 .2000-03-07. [36] MARINESCU O,BOCIORT F. Saddle-point construction in the design of lithographic objectives[J]. Opt. Eng.,2008,47(9):093002/1-093002/6. [37] LOWISCH M,KUERZ P,MANN H-J, et al.. Optics for EUV production[J]. SPIE,2010,7636:763603/1-763603/11. [38] ANTONI M,SINGERA W,SCHULTZ J, et al.. Illumination optics design for EUV-lithography[J]. SPIE,2000,4146:25-34. [39] MURAKAMI K,OSHINO T,KONDO H. Development of optics for EUV lithography tools[J]. SPIE,2007,6517:65170J/1-65170J/8. [40] OSHINO T,SHIRAISHI M,KANDAKA N, et al.. Development of illumination optics and projection optics for high-NA EUV exposure tool(HiNA)[J]. SPIE,2003,5037:75-81. [41] SMITH D G. Modeling EUVL illumination systems[J]. SPIE,2008,7103:71030B/1-71030B/8.