Volume 3Issue 6
Dec. 2010
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CONG Hai-bing, NING Yong-qiang, ZHANG Xing, WANG Zhen-fu, WANG Li-jun. Brightness characteristics of 980 nm high power VCSEL[J]. Chinese Optics, 2010, 3(6): 637-642.
Citation: CONG Hai-bing, NING Yong-qiang, ZHANG Xing, WANG Zhen-fu, WANG Li-jun. Brightness characteristics of 980 nm high power VCSEL[J].Chinese Optics, 2010, 3(6): 637-642.

Brightness characteristics of 980 nm high power VCSEL

  • Received Date:11 Jul 2010
  • Rev Recd Date:13 Sep 2010
  • Publish Date:20 Dec 2010
  • On the basis of the brightness definition of Vertical-cavity Surface-emitting Lasers(VCSELs), the brightness characteristics of high power strained quantum well 980 nm InGaAs/GaAs VCSEL with a diameter of 400 m are demonstrated at continuous-wave(CW) operation with a recycled water cooling(the temperature is controlled at 15 ℃). The results show that when the injection current is smaller than 4 A, the brightness will increase with the increasing of injection current; while the injection current is larger than 4 A, the output power increases with the increasing of injection current, but the beam quality becomes bad, and then the M2 is the main factor impacting on the brightness characteristics. When the injection current is 4 A and the output power is 1.2 W, the beam quality is the best, M2 factor achieves 207, and the maximum brightness is 2.43 kW/cm2sr. Finally, the main factors that impact the brightness characteristics of high-power VCSEL devices are analyzed, and the solutions to improve the brightness characteristics of the device are also proposed.

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