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摘要:物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破。由于存在不同于常规半导体的特殊拓扑量子态（如狄拉克费米子、外尔费米子、马约拉纳费米子等），拓扑量子材料通常能表现出一些新颖的物理特性（如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等），因而在低能耗电子器件和宽光谱光电探测器件领域具有重要的研究价值。本文综述了拓扑量子材料的特性与制备方法以及在光电探测领域的发展现状，重点讨论了拓扑绝缘体与拓扑半金属宽光谱光电探测器的器件结构与性能，同时也对拓扑量子材料在光电探测器领域的发展前景进行了展望。Abstract:The discovery of the topological quantum states of matter is a major milestone in condensed matter physics and material science. Due to the existence of special surface states (e.g. Dirac fermions, Weyl fermions, Majorana fermions), topological quantum materials can usually exhibit some novel physical properties (such as the quantum anomalous Hall effect, 3D quantum Hall effect, Zero-band gap caused by topological states, ultra-high carrier mobility, etc.), which are different from conventional semiconductors. Because of this, there is an abundance of prospects for applications in low-power electronic and optoelectronic devices, especially in broad-spectrum detection. However, the application of topological quantum materials in the field of photoelectric detection is still in the exploratory stage at present. This article reviews the characteristics and preparation methods of topological quantum materials and the development status with respect to optical-sensing materials in photodetectors. The structure and performance of the devices based on topological quantum materials are also mentioned as the development prospects in the field of broad-spectrum detection.
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图 1光电探测器类型与探测机理示意图
Figure 1.Photodetector categories and schematic diagram of detection mechanisms
图 3（a, b） Bi2Se3纳米线光电探测器示意图及其在1064 nm辐射下的光电流响应[60]；（c, d） Bi2Se3纳米线/Si异质结结构示意图及其在808 nm下的光电流响应[61]；（e）Bi2Se3/Si纳米片器件结构示意图[62]；（f）Bi2Se3纳米片太赫兹光电探测器结构示意图[64]
Figure 3.(a, b) Schematic diagram of a Bi2Se3nanowire photodetector and its photocurrent response under 1064 nm[60]; (c, d) schematic diagram of a Bi2Se3nanowire/Si heterojunction and its photocurrent response at 808 nm[61]; (e) schematic diagram of a Bi2Se3/Si nanosheet device[62]; (f) schematic diagram of a Bi2Se3nanosheet terahertz photodetector[64]
图 5(a, b) Bi2Te3的器件结构示意图及偏振特性[69]；（c）Bi2Te3/WS2垂直异质结光电探测器结构示意图[70]；（d）以Bi2Te3作为电极的SnS2光电探测器结构示意图[71]；(e，f) Bi2Te3/有机小分子平面异质结光电探测器及其能带结构示意图[72]
Figure 5.(a, b) Device structure and polarization characteristics of Bi2Te3[69]; (c, d) schematic diagram of photodetector based on Bi2Te3/WS2vertical heterojunction[70]and SnS2with Bi2Te3electrode[71]; (e, f) schematic diagram of Bi2Te3/organic small molecule planar heterojunction photodetector and its corresponding energy band structure[72]
图 7（a, b）Sb2Te3薄膜光电探测器及其能带结构示意图[77]；(c) Sb2Te3/STO异质结光电探测器阵列示意图[78]；(d) Sb2Te3/MoS2异质结光电晶体管示意图[79]
Figure 7.(a, b) Schematic diagram of Sb2Te3thin film photodetector and its corresponding charge transfer mechanism[77]; (c,d) schematic diagrams of Sb2Te3/STO heterojunction array[78]and Sb2Te3/MoS2heterojunction phototransistor[79]
图 10（a, b） Cd3As2薄膜/并五苯异质结能带结构及在不同波段下的光电流响应特性[93]；(c, d) Cd3As2薄膜、Cd3As2/DPEPO和Cd3As2/PEDOT:PSS异质结光谱吸收特性及在不同条件下的响应度[94]
Figure 10.(a, b) Charge transfer mechanism and photocurrent response characteristics of Cd3As2film/Pentacene[93]；（c,d）absorption spectra of Cd3As2film, Cd3As2/DPEPO and Cd3As2/PEDOT:PSS heterojunction and responsivities under different wavebands[94]
图 14拓扑量子材料光电探测器的响应率与波长分布
Figure 14.The responsivity and wavelength distributions of topological quantum materials
图 15二维材料与拓扑量子材料光电探测器响应波段对比
Figure 15.Detection ranges of two-dimensional materials and topological quantum materials
表 1基于拓扑绝缘体的光电探测器性能参数
Table 1.Performance parameters of photodetectors based on topological insulators
Topological Type Active Materials Responsivity (A·W−1) Bias (V) Detectivity (Jones) Response time (ms) Detecting range (nm) Ref. Topological insulator Bi2Se3NW 300 @1064 nm 0.175 7.5×109 550/400 532~1064 [60] Bi2Se3NW/Si 924.2 @808 nm −5 2.38×1012 45/47 380~1310 [61] Bi2Se3/Si NW 938.4@890 nm NA 2.35×1013 41/79 Near-infrared [62] Bi2Se3/ln2Se3 1650 @633 nm 5 NA NA Visible [63] Bi2Se3flakes 75 @THZ 0 2.17×1011 60 Terahertz [64] Bi2Se3film/Gra 1.97 @ 3.5 μm 0.5 1.7×109 NA Mid-infrared [65] Bi2Se3film/MoO3 2609 @1310 nm 20 9.43×1010 63/78 405~1550 [66] Bi2Te3film/WS2 30.4 @ 1550 nm 3 2.3×1011 20/20 375~1550 [70] Bi2Te3/Pentacene 14.89 @650 nm 0 7.8×1010 1.89/2.47 450~3500 [72] Bi2Te3/CuPc 23.54 @650 nm 0 1.85×1010 1.42/1.98 405~3500 [73] Bi2Te3flake/Gra 35 @532 nm 1 NA NA 532~1550 [75] WSe2/Bi2Te3 2100@633 nm 1 NA 0.18/0.21 375~1550 [76] Sb2Te3film 21.7 @980 nm 1 1.22×1011 NA Near-infrared [77] Sb2Te3/STO 0.048 @405 nm 0 8.6×1010 0.030/0.095 405~1550 [78] Sb2Te3/MoS2 330 @520 nm −1 1012 0.36/0.47 Visible [79] Topological Crystalline Insulator SnTe film 3.75 @2003 nm 2 NA 310/850 405~3800 [83] SnTe flake 49.03 @650 nm 1 NA 210/730 254~4650 [84] SnTe/Si 2.36 @1064 nm 0 1.54×1014 2.2/3.8 Near-infrared [86] SnTe/Bi2Se3 0.146@1550 nm −5 1.15×1010 6.9/19.2 Near-infrared [87] 
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表 2基于狄拉克半金属的光电探测器性能参数
Table 2.Performance parameters of photodetectors based on Dirac semi-metal
Topological Type Active materials Responsivity (A·W−1) Bias (V) Detectivity (Jones) Response time (ms) Detecting range (nm) Ref. Dirac semi-metal Cd3As2 0.0059 @633 nm 0.01 NA 6.9 ps（intrinsic） 532~10600 [89] Cd3As2/MoS2 2700 @405 nm 2 NA 0.043/0.065 365~1550 [91] Cd3As2/pentacene 0.0362@650 nm 0.0005 NA 30/60 450~10600 [93] Cd3As2/DPEPO 0.729 @808 nm 0 NA 9.7/11.4 365~10600 [94] Cd3As2/PEDOT:PSS 0.104 @808 nm 0 NA 0.282/0.517 405~10600 [94] Bilayer PtSe2 0.15 @632 nm 0.1 7×108 1.2 632~10000 [96] PtTe2 1.6 @ THZ 0 NA 0.017/0.16 Terahertz [97] Weyl semi-metal TaAs 0.0007 @438.5 nm 0.0001 1.68×108 NA 438~10290 [98] MoTe2flake 0.0004 @532 nm 0 1.07×108 0.043 532~10600 [100] Weyl semi-metal WTe2flake 250 @3.8 μm (77 K) 0.1 NA NA 514.5~10600 [102] TaIrTe4 0.02@10.6 μm 0 1.8×108 0.027 532~10600 [103] MoTe2film/Si 0.19 @980 nm 0 6.8×1013 150/350 (ns) 300~1800 [104] MoTe2flake/Ge 12460 @915 nm −2 3.3 ×1012 5 Near-infrared [105] 下载:
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