留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

环境友好半导体Mg2Si薄膜的研究进展

赵珂杰,谢泉,肖清泉,余志强

downloadPDF
赵珂杰, 谢泉, 肖清泉, 余志强. 环境友好半导体Mg2Si薄膜的研究进展[J]. , 2010, 3(5): 446-451.
引用本文: 赵珂杰, 谢泉, 肖清泉, 余志强. 环境友好半导体Mg2Si薄膜的研究进展[J]. , 2010, 3(5): 446-451.
ZHAO Ke-jie, XIE Quan, XIAO Qing-quan, YU Zhi-qiang. Study on semiconductor Mg2Si thin films[J]. Chinese Optics, 2010, 3(5): 446-451.
Citation: ZHAO Ke-jie, XIE Quan, XIAO Qing-quan, YU Zhi-qiang. Study on semiconductor Mg2Si thin films[J].Chinese Optics, 2010, 3(5): 446-451.

环境友好半导体Mg2Si薄膜的研究进展

基金项目:

国家自然科学基金资助项目(No.6076602);科技部国际合作专项资助项目(No.2008DFA52210 );贵州省信息产业厅资助项目(No.0831)

详细信息
    作者简介:

    赵珂杰(1983—),男,河北石家庄人,硕士,主要从事新型电子功能材料的研究。E-mail:kejie8308@163.com
    谢 泉(1964—),男,湖南邵阳人,教授,博士生导师,主要从事新型电子功能材料的研究。 E-mail:qxie@gzu.edu.cn

  • 中图分类号:TN304.2; TN304.055

Study on semiconductor Mg2Si thin films

  • 摘要:介绍了近年来Mg2Si薄膜的研究进展。从Mg2Si材料的晶体结构出发,重点对Mg2Si薄膜的基本性质、制备方法和应用前景进行了论述。研究表明,Mg2Si是一种窄带隙间接半导体材料,在光电和热电领域都具有较好的应用价值,因其兼具了组成元素地层含量丰富、无毒、无污染等优点,被视为是一种新型的环境友好半导体材料。在Mg2Si薄膜的外延生长技术方面,目前比较成熟的方法有分子束外延、脉冲 沉积、反应扩散等多种,但普遍存在制备条件较苛刻,成膜质量不高等缺点。最后,对目前存在的问题及未来的研究动向做了简要讨论。

  • [1] MAKITA Y. Kankyo Semiconductors-why and how . Proceeding of Japan-UK joint Workshop on Kankyo-Semiconductors .Tsukuba International Congress Center,August 3-4,2000. [2] WANG Y,WANG X N,MEI Z X,et al.. Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate[J].J. Appl. Phys.,2007,102(12):126102-126104. [3] 方容川.固体光谱学[M]. 合肥:中国科学技术大学出版社,2003:60. FANG R CH.Solid Spectroscopy[M]. Hefei:University of Science and Technology of China Press, 2003:60.(in Chinese) [4] SAMSONOV G V,DVORINA L A.Silicides[M]. Moscow:Metallurgy Publishing House,1979:447. [5] TAMURA D,NAGAI R,SUGIMOTO K,et al.. Melt growth and characterization of Mg2Si bulk crystals[J].Thin Solid Films,2007,515:8272-8276. [6] VANTOMME A,LANGOUCHE G,MAHAN J E,et al.. Growth mechanism and optical properties of semiconducting Mg2Si thin films[J].Microelectronic Eng.,2000,50(1-4):237-242. [7] AU-YANG M Y,COHEN M. Electronic structure and optical properties of Mg2Si, Mg2Ge, and Mg2Sn[J].Physical Rev.,1969,178(3):1358-1364. [8] AYMERICH F,MULA G. Pseudopotential band structures of Mg2Si, Mg2Ge, Mg2Sn, and of the solid solution Mg2Ge, Sn[J].Physical Status Solidi,1970,42(2): 697-704. [9] CORKILL J L,COHEN M L. Structural, bonding, and electronic properties of IIA-IV antifluorite compounds[J].Physical Rev. B,1993,48(23):17138-17144. [10] IMAI Y,WATANABE A. Energetics of alkaline-earth metal silicides calculated using a first-principle pseudopotential method[J].Intermetallics,2002,10:333-341. [11] IMAI Y,WATANABE A,MUKAIDA M. Electronic structures of semiconducting alkaline-earth metal silicides[J].J. Alloy. Comp.,2003,358(1-2):257-263. [12] 陈茜,谢泉,闫万琚,等. Mg2Si电子结构及光学性质的研究[J]. 功能材料 ,2007年增刊(38)卷:4119-4123. CHEN Q,XIE Q,YAN W J,et al.. Study on the electronic structure and optical properties for Mg2Si[J].Functional Materials,2007 Supplement(38)Vol:4119-4123.(in Chinese) [13] SONG S W,STRIEBEL K A,SONG X Y,et al.. Amorphous and nanocrystalline Mg2Si thin-film electrodes[J].J. Power Sources,2003,119-121:110-112. [14] SONG S W,STRIEBEL K A,et al.. Electrochemical studies of nanoncrystalline Mg2Si thin film electrodes orepared by pulsed laser deposition[J].J. Electrochem. Soc.,2003,150(1):121-127. [15] MAHAN J E,VANTOMME A,LANGOUCHE G,et al.. Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy[J].Physical Rev. B,1996,54(23):16965-16971. [16] GORANOVA E,AMOV B,BALEVA M,et al... Ion beam synthesis of Mg2Si[J].J. Mater. Sci.,2004,39:1857-1859. [17] KAMILOV T S,KABILOV D K,KAMILOVA R Kn,et al.. Investigation of the magnesium silicide Mg2Si films . 2006 International Conference on Thermoelectrics,Vienna,Austria 6-10 Aug,2006:468-469. [18] CHU W K,LAU S S,MVLLER H,et al.. Implanted noble gas atoms as diffusion markers in silicide formation[J].Thin Solid Films,1975,25(2):393-402. [19] WITTMER M,LVTHY W,Von ALLMEN M. Laser induced reaction of magnesium with silicon[J].Phys. Lett. A,1979,75(1-2):127-130. [20] JANEGA P L,MCCAFFREY J,LANDHEER D,et al.. Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures[J].Appl. Phys. Lett.,1988,53(21):2056-2058. [21] BOHER P,HOUDY P,KVHNE M,et al.. Tungsten/magnesium silicide multilayers for soft X-ray optics[J].J. X-Ray Sci. Technol.,1992,3(2):118-132. [22] VANTOMME A,MAHAN J E,LANGOUCH G B,et al.. Thin film growth of semiconducting Mg2Si by codeposition[J].Appl. Phys. Lett.,1997,70(9):1086-1088. [23] TANI J,KIDO H. Thermoelectric properties of Sb-doped Mg2Si semiconductors[J].Intermetallics,2007,15:1202-1207. [24] TANI J,KIDO H. Thermoelectric properties of Bi-doped Mg2Si semiconductors[J].Physical B,2005,364:218-224. [25] SONG R B,AIZAWA T,SUN J Q. Synthesis of Mg2Si1-xSnxsolid solutions as thermoelectric materials by bulk mechanical alloying and hot pressing[J].Mater. Sci. Eng. B,2007,136(2-3):111-117.
  • 加载中
计量
  • 文章访问数:4352
  • HTML全文浏览量:443
  • PDF下载量:1860
  • 被引次数:0
出版历程
  • 收稿日期:2010-03-11
  • 修回日期:2010-05-13
  • 刊出日期:2010-10-25

目录

    /

      返回文章
      返回
        Baidu
        map