极紫外投影光刻光学系统

王丽萍

极紫外投影光刻光学系统

王丽萍

中国科学院长春光学精密机械与物理研究所,吉林长春 1300332

基金项目:

国家重大科技专项支持课题

详细信息

作者简介:
王丽萍(1981—),女,吉林长春人,助理研究员,主要从事光学系统设计方面的研究。 E-mail:wlp8121@126.com

中图分类号: TN305.7
计量
- 文章访问数: 5449
- HTML全文浏览量: 690
- PDF下载量: 3175
- 被引次数: 0
出版历程
- 收稿日期: 2010-05-17
- 修回日期: 2010-07-25
- 刊出日期: 2010-10-25

Optical system of extreme ultraviolet lithography

WANG Li-ping

State Key Laboratory of Applied Optics,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

摘要

摘要: 极紫外光刻(EUVL)是半导体工业实现32~16 nm技术节点的候选技术,而极紫外曝光光学系统是EUVL的核心部件,它主要由照明系统和微缩投影物镜组成。本文介绍了国内外现有的EUVL实验样机及其系统参数特性;总结了EUVL光学系统设计原则,分别综述了EUVL投影光学系统和照明光学系统的设计要求;描述了EUVL投影曝光系统及照明系统的设计方法;重点讨论了适用于22 nm节点的EUVL非球面六镜投影光学系统,指出了改善EUVL照明均匀性的方法。
- 极紫外光刻 /
- 投影光学系统 /
- 照明光学系统 /
- 光学设计
Abstract: Extreme UltraViolet Lithography(EUVL) has been regarded as a promising lithographic technology following ArF immersion lithography for the 32 nm hp node and beyond and the EUV optical exposure system consisting of a illumination system and a projection system is a key part in the EUVL. This paper introduces several kinds of EUVL tools at home and abroad and gives their optical specifications. Then, it summarizes the principles of optical design for EUVLs and reviews the design requirements for the illumination and projection systems, respectively. Finally, it describes the design methods of illumination and projection systems in EUVLs, especially, it discusses a aspheric 6-mirror projection optics which is suitable for 22 nm EVUL technology and gives the improvement method of illumination uniformity for the illumination system.
- Extreme UltraViolet Lithography(EUVL) /
- projection system /
- illumination system /
- optical design

HTML全文

参考文献(1)

[1] HUDYMA R M. An overview of optical systems for 30 nm resolution lithography at EUV wavelengths[J]. SPIE,2002,4832:137-148. [2] WOODA O,KOAYB C-S,PETRILLOB K. EUV Lithography at the 22 nm technology node[J]. SPIE,2010,7636:76361M/1-76361M/8. [3] BAKSHI V. EUV Lithography[M]. Bellingham:SPIE Press,2009. [4] JEWELL T E. Reflctive system design study for soft X-ray projection lithography[J]. J.Vac.Sci.Technol.,1990,B8(6):1519-1523. [5] GOLDSMITHA J E M,BARRA P K,BERGERA K W. Recent advances in the Sandia EUV l0x microstepper[J]. SPIE,1998,3331:11-19. [6] KURIHARA K. Two-mirror telecentric optics for soft X-ray reduction lithography[J]. J. Vac. Sci. Technol.,1991,B9(6):3198-3192. [7] JEWELL T E. Two aspheric mirror system design for SXPL . OSA Proceedings on Soft X-Ray Projection Lithography .Monterey,California,May 10-12,1993,18:71-74. [8] GOLDSMITH J E M,BERGER K W,BOZMAN D R,et al.. Sub-100-nm imaging with an EUV 10x microstepper[J]. SPIE,1999,3676,:264-271. [9] 金春水,王占山,曹健林. 软X射线投影光刻原理装置的设计[J]. 光学精密工程 ,2000,8(1):66-70. JIN CH SH,WANG ZH SH,CAO J L. Development of elementary arrangement for soft X-ray projeetion lithography[J]. Opt. Precision Eng.,2000,8(1):66-70.(in Chinese) [10] TICHENOR D A,RAY-CHAUDHURI A K,REPLOGL W C,et al.. System integration and performance of the EUV engineering test stand[J]. SPIE,2001,4343:19-37. [11] BOOTH M,BRIOSO O,BRUNTON A. High-resolution EUV imaging tools for resist exposure and aerial image monitoring[J]. SPIE,2005,575:178-89. [12] SOUFLI R,HUDYMA R M,SPILLER E,et al.. Sub-diffraction-limited multilayer coatings for the 0.3 numerical aperture micro-exposure tool for extreme ultraviolet lithography[J]. Appl. Opt.,2007,46:3736-3746. [13] GOLDBERG K A,NAULLEAU P P,DENHAM P E,et al.. At-wavelength alignment and testing of the 0.3-NA MET optic[J]. J. Vac. Sci. Technol.,2005,B22(6):2956-2961. [14] ROBERTSL J M,BACUITAL T,BRISTOLL R L. One small step:world's first integrated EUVL process line[J]. SPIE,2005,5751:64-77. [15] NAULLEAU P P,ANDERSON C N,Dean K,et al.. Recent results from the Berkeley 0.3-NA EUV microfield exposure tool[J]. SPIE,2007,6517:65170V/1-65170V/8. [16] NAULLEAU P P,ANDERSON C N,BACLEA-AN L-M,et al.. The SEMATECH Berkeley microfield exposure tool:learning at the 22-nm node and beyond[J]. SPIE,2009,7271:72710W/1-72710W/11. [17] OIZUMI H,TANAKA Y,KUMASAKA F,et al.. Lithographic performance of high-numerical-aperture(NA=0.3) EUV Small-Field Exposure Tool(HINA)[J]. SPIE,2005,5751:102-105. [18] UZAWA S,KUBO H,MIWA Y,et al.. Path to the HVM in EUVL through the development and evaluation of the SFET[J]. SPIE,2007,6517:651708/1-651708/10. [19] MEILING H,BOON E,BUZING N,et al.. Performance of the full-field EUV systems[J]. SPIE,2008,6921:69210L/1-69210L/13. [20] MEILING H,BUZING N,CUMMING S K,et al.. EUVL systems:moving towards production[J]. SPIE,2009,7271:727102/1-727102/15. [21] HARNED N,GOETHALS N,GROENEVELD R,et al.. EUV lithography with the Alpha Demo Tools:status and challenges[J]. SPIE,2007,6517:651706/1-651706/12. [22] WAGNER C,HARNEDA N,KUERZB P,et al.. EUV into production with ASML's NXE platform[J]. SPIE,2010,7636:76361H/1-76361H/16. [23] MIURA T,MURAKAMI K,SUZUKI K,et al.. Nikon EUVL development progress summary[J]. SPIE,2006,6151:1-10. [24] MIURA T,MURAKAMI K,KAWAINIKON H,et al.. EUVL development progress update[J]. SPIE,2010,7636:76361G/1-76361G/16. [25] MORI I,SUGA O,TANAKA H,et al.. Selete's EUV program: progress and challenges[J]. SPIE,2008,6921:692102/1-692102/12. [26] GOLDSTEIN M,HUDYMA R,NAULLEAU P,et al.. Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography[J]. Opt. Lett.,2008,33(24):2995-2997. [27] SOUFLI R,SPILLER E,SCHMIDT M A,et al.. Multilayer optics for an extreme ultraviolet lithography tool with 70 nm resolution[J]. SPIE,2001,4343:51-59. [28] CHEN L,MICHAEL,DESCOUR R,et al.. Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics[J]. Appl. Opt.,2001,40(1):129-135. [29] MICHALOSKI P. Requirements and designs of illuminators for microlithography[J]. SPIE,2004,5525:1-10. [30] HAGA T,KINOSHITA H. Illumination system for extreme ultraviolet lithography[J]. J. Vac. Sci. Technol. B,1995,13(6):2914-2918. [31] KOMATSUDA H. Novel illumination system for EUVL[J]. SPIE,2000,3997:765-776. [32] BORN M,WOLF E. Principles of Optics 7th Edition[M]. Cambridge:Cambridge University Press,1999. [33] HUDYMA R M. High numerical aperture projection system for extreme ultraviolet projection lithography:US,6072852 .2000-06-00. [34] CHAPMAN H N,HUDYMA R M,SHAFER D R,et al.. Reflective optical imaging system with balanced distortion:US,5973826 .1999-10-26. [35] HUDYMA R M. High numerical aperture ring field projection system for extreme ultraviolet projection lithography:US,6033079 .2000-03-07. [36] MARINESCU O,BOCIORT F. Saddle-point construction in the design of lithographic objectives[J]. Opt. Eng.,2008,47(9):093002/1-093002/6. [37] LOWISCH M,KUERZ P,MANN H-J,et al.. Optics for EUV production[J]. SPIE,2010,7636:763603/1-763603/11. [38] ANTONI M,SINGERA W,SCHULTZ J,et al.. Illumination optics design for EUV-lithography[J]. SPIE,2000,4146:25-34. [39] MURAKAMI K,OSHINO T,KONDO H. Development of optics for EUV lithography tools[J]. SPIE,2007,6517:65170J/1-65170J/8. [40] OSHINO T,SHIRAISHI M,KANDAKA N,et al.. Development of illumination optics and projection optics for high-NA EUV exposure tool(HiNA)[J]. SPIE,2003,5037:75-81. [41] SMITH D G. Modeling EUVL illumination systems[J]. SPIE,2008,7103:71030B/1-71030B/8.

施引文献

附加信息(0)

访问统计