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摘要:基于电光晶体的偏振调制技术在 三维成像领域起着越来越重要的作用。受限于铌酸锂（LN）材料的低视场和高半波电压，采用传统电光调制技术难以进一步提升三维成像性能。随着钙钛矿结构电光材料制备工艺的日趋成熟，基于新型材料的电光调制技术将成为突破 三维成像探测精度的最佳手段，铌镁酸铅-钛酸铅（PMNT）、锆钛酸镧铅（PLZT）和钽铌酸钾（KTN）3种典型材料具有优良的电光性能和介电性质；能够突破视场和半波电压的限制，但应用到电光调制领域时存在PMNT调制带宽较低、PLZT透过性能较差、KTN实际应用带宽较低等难题。未来的研究将着眼于将该调制技术的实用性，一方面通过掺杂改性等手段提升电光调制性能，另一方面通过建立性能表征模型优化系统的信噪比。Abstract:Polarization modulation technology based on electro-optic crystals is playing an increasingly important role in the field of three-dimensional laser imaging. Due to the low field of view and high half-wave voltage of LiNiO 3(LN) materials, it is difficult for traditional electro-optic modulation technology to further improve 3D imaging performance. As the preparation technology of perovskite-structured electro-optical materials becomes more mature, electro-optic modulation technology based on new materials will become an excellent means to create a breakthrough in the detection accuracy of laser 3D imaging. PMNT, PLZT and KTa xNb 1-xO 3(KTN) three typical materials have excellent electro-optical properties and dielectric properties that might surpass the field of view and half-wave voltage limitation. However, their applications in electro-optic modulation has lead to difficulties such as a low modulation bandwidth for PMNT, poor transmission performance for PLZT, and low practical application bandwidth for KTN. Future research will focus on the practicality of this modulation technology. The electro-optic modulation performance can be improved by doping and the signal-to-noise ratio of the system can be optimized by establishing performance characterization models.
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图 1偏振调制 三维成像系统的示意图
Figure 1.Schematic diagram of 3D imaging system for polarization modulation laser
图 3Bridgman方法生长的PMNT单晶[25]
Figure 3.PMNT single crystal grown with the Bridgman method
图 7不同Al掺杂量的PLZT材料透过率与波长相对关系
Figure 7.Relationship between the transmittance and wavelength of PLZT materials with different Al dopings
图 8不同Nd掺杂量的PLZT材料透过率与波长相对关系
Figure 8.Relationship between the transmittance and wavelength of PLZT materials with different Nd dopings
图 9KTN电光调制器原理示意图（a）及等效电路图（b）
Figure 9.(a) Schematic of KTN electro-optic modulator and (b) equivalent circuit diagram
表 1室温下632.5 nm波长测得PMNT材料的二次电光系数和1 kHz电场下的介电常数
Table 1.The secondary electro-optic coefficient of the PMNT material measured at a wavelength of 632.5 nm at room temperature and the dielectric constant under an electric field of 1 kHz
材料 QEO系数/(10−16m2/V2) 文献 材料 介电常数 文献 单晶PMN-8PT 8.19 [26] 薄膜PMN-30PT 2800 [30] 陶瓷PMN-25PT+4%La 8 [27] 薄膜PMN-40PT 1800 [32] 陶瓷PMN-25PT+3%La 40 [27] 薄膜PMN-30PT+La 2025 [32] 陶瓷PMN-25PT+2%La (T= 330 K) 10 [27] 薄膜PMN-30PT+Pr 2398 [32] 陶瓷PMN-33PZT(T= 340 K) 18 [28] 陶瓷PMN-23PZT 6 [28] 陶瓷PMN-10PZT (T= 280 K) 2.5 [28] 
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表 2室温下在632.5 nm波长测得PLZT材料的二次电光系数和1 kHz电场下的介电常数
Table 2.The secondary electro-optic coefficient of the PLZT material measured at a wavelength of 632.5 nm at room temperature and the dielectric constant under an electric field of 1 kHz
PLZT材料La/Ti/Zr QEO系数10-16m2/V2 文献 PLZT材料La/Ti/Zr 介电常数 文献 8/65/35 PLZT（λ=532 nm） 25 [35] 9/65/35PLZT+0.15 mol% Li+Bi（T=348 K） 7819 [37] 8.8/65/35 PLZT（T=258 K） 2.8 [33] 9/65/35PLZT+0.25 mol% Bi2O3+CuO（T=373 K） 11290 [38] 9/65/35 PLZT（λ=532 nm） 3.7 [35] 9/65/35PLZT（T=373 K） 10539 [39] 9.4/65/35 PLZT（T=244 K） 1.48 [33] 7/65/35PLZT+0.08 wt% Cr2O3（T=427 K） 13985 [40] 10/65/35PLZT（λ=532 nm） 1.3 [35] 薄膜PLZT+2%La（f=100 Hz） 1502.59 [42] 11/40/60PLZT+0.1 mol%Dy（T=385 K） 5.59 [34] PLZT+1.50 mol%Al（T=385 K） 16000 [45] 下载:
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表 3KTN材料二次电光系数对比分析
Table 3.Comparative analysis of quadratic electro-optic coefficient of KTN materials
单位 KTN（Ta/Nb） QEO系数/(10−16m2/V2) 测量条件 备注 NTT公司 —— 224 T=314 Kλ=685 nm 山东科学院 0.75/0.25 65 λ=633 nm 调研已经达到10−14量级 0.63/0.37 86 室温λ=633 nm 美国宾夕法尼亚大学 0.7/0.3 20 T=299 Kλ=532 nm Kovacs前 694 0.45 K/s降温 Kovacs后 哈尔滨工业大学 0.61/0.39 59.6 T=296 Kλ=632.8 nm 下载:
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表 4PMNT、PLZT和KTN电光调制可行性分析（附LN作为比较）
Table 4.Feasibility analysis of electro-optic modulation by PMNT, PLZT and KTN (with LN for comparison)
材料名称 有效电光系数/(m2·V−2) 半波电压/V 调制电压/V 视场 产品成熟度 LN 6.8×10−12 1 900 ~600 <5° 非常成熟 PMNT ~4×10−15 ~60 ~20 较成熟（硅酸盐所） PLZT ~5×10−16 ~160 ~50 较成熟（硅酸盐所） KTN 0.2×10−15 ~260 ~80 ~30° 较成熟（宾夕法尼亚） 4~9×10−15 ~50 ~16 较成熟（山东科学院） 2.24×10−14 ~24 ~8 较成熟（NTT公司） 下载:
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表 5PMNT、PLZT和KTN电光调制适用性分析
Table 5.Applicability analysis of different electro-optic modulations
调制器
类型调制性能 衍生难题 解决方式及效果 低电压调制 大视场 LN × × PMNT √ √ 响应速度慢、
光散射严重难以应用于高速
电光调制PLZT √ √ 半波电压高 Dy掺杂使二次电光
性能明显提高透过率低 Dy掺杂和Al掺杂使
透过率明显提高，
但无法突破65%KTN √ √ 实际应用调制
带宽低通过优化系统结构，理论上可以达到ns级响应及数百兆赫兹调制带宽，但实际仍未实现 下载:
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