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Hybrid plasmonic leaky-mode lasing on subwavelength scale

YAN Shan-shan,WANG Shuang-peng,SU Shi-chen

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严闪闪, 王双鹏, 宿世臣. 亚波长尺度下混合等离子泄漏模式 [J]. , 2021, 14(2): 397-408. doi: 10.37188/CO.2020-0108
引用本文: 严闪闪, 王双鹏, 宿世臣. 亚波长尺度下混合等离子泄漏模式 [J]. , 2021, 14(2): 397-408.doi:10.37188/CO.2020-0108
YAN Shan-shan, WANG Shuang-peng, SU Shi-chen. Hybrid plasmonic leaky-mode lasing on subwavelength scale[J]. Chinese Optics, 2021, 14(2): 397-408. doi: 10.37188/CO.2020-0108
Citation: YAN Shan-shan, WANG Shuang-peng, SU Shi-chen. Hybrid plasmonic leaky-mode lasing on subwavelength scale[J].Chinese Optics, 2021, 14(2): 397-408.doi:10.37188/CO.2020-0108

亚波长尺度下混合等离子泄漏模式

详细信息
  • 中图分类号:O432.1+2; O472+.3

Hybrid plasmonic leaky-mode lasing on subwavelength scale

doi:10.37188/CO.2020-0108
Funds:Supported by National Natural Science Foundation of China (No. 61574063); Science and Technology Program of Guangdong Province (No. 2017A050506047, No. 2017B030311013); Guangzhou Science and Technology Project (No. 2016201604030047, No. 201804010169); Guangdong Province Scientific and Technology Project (No. 2019B090905005); Science and Technology Development Fund (No. 0125/2018/A3, No. 0071/2019/AMJ) from Macau SAR; Multi-Year Research Grants (No. MYRG-00149-FST) from University of Macau
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    Author Bio:

    YAN Shan-shan(1993—), male, born in Huangshi, Hubei, PhD candidate. He received his BS degree from Hubei University, and his MS degrees from South China Normal University in 2015 and 2018, respectively, all in Electrical Engineering. Shanshan Yan’s research interest has been in the area of traditional wide bandgap semiconductor and the latest perovskite materials. E-mail: yb87810@um.edu.mo

    WANG Shuang-peng(1982—) male, born in Harbin, Heilongjiang. Dr. Wang is an assistant professor in IAPME at University of Macau. He got his doctorate from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 2011. His research interests are group II oxide, low dimensional materials and their optoelectronic application. E-mail:spwang@um.edu.mo

    SU Shi-chen(1980—) male, born in Jiamusi, Heilongjiang. Dr. Su received his doctoral degree in science from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 2009. He is now a professor in South China Normal University. He is engaged in the research of wide bandgap semiconductor materials, such as ZnO and GaN, as well as their applications in optoelectronics. E-mail:shichensu@scnu.edu.cn

    Corresponding author:spwang@um.edu.mo;shichensu@scnu.edu.cn
  • 摘要:由于光存在衍射极限,因此传统方法不能实现亚波长尺度下的 激射。为了打破这一衍射极限,本文设计了金属-介电层-半导体堆叠结构来实现深亚波长尺度下的 激射,并讨论了相关结构对模式传播的影响。结构设计上,采用低介电常数金属银作为衬底、10 nm厚的LiF作为介电层、具有六边形截面的半导体纳米线ZnO作为高介电常数层,采用有限差分本征模和时域有限差分方法对所设计的结构进行光学仿真模拟。首先,通过改变ZnO纳米线的直径,使用有限本征模方法分析介电层中的光学模式,得到4种模式分布。然后,通过这4种光学模式在不同纳米线直径下的有效折射率和损耗计算了对应的波导传输距离以及激射阈值增益。最后,采用三维时域有限差分方法仿真分析纳米线稳态 发射过程中各模式的电场分布。结果表明:在纳米线和金属衬底之间的介电层上存在混合等离子体模式和混合电模式,对于直径低于75 nm的ZnO纳米线,没有有效的物理光学模式,即混合等离子体模式和混合电模式都被切断,当ZnO纳米线的直径大于75 nm时,混合等离子体模式可以有效存在,而混合电模式在ZnO纳米线的直径达到120 nm之后才出现。虽然混合等离子体模式可以更好地限制在介电层中,但是它们的模式损耗太大,传播距离相对较小。此外,与混合等离子体模式相比,混合电模式的传播距离更长。在给定微米线的直径( D= 240 μm)下,混合电模式传播距离超过50 μm。综上可知,在深亚波长尺度下利用混合泄漏模式可以打破光学衍射极限并实现 激射。

  • Figure 1.A hexagonal semiconductor nanowire placed on a flat silver substrate separated by a 10 nm thin LiF layer. The upper medium is LiF layer with refractive index of 1.5 and its center defines the origin (x=y=z= 0).

    Figure 2.Spatial electric filed distribution for the modes of (a) HSP1 and (b) HE1 atD= 120 nm, (c) HSP2 and (d) HE2 atD= 200 nm.

    Figure 3.(a) Energy distribution along thezdirection of HSP1 mode and HE1 mode. The diameter of ZnO nanowire is 120 nm. Electric field componentsEx,Ey,Ezof (b) HSP1 mode and (c) HE1 mode.

    Figure 4.(a) Effective refractive index and (b) mode confinement factor at different diameters for each mode in HSP and HE waveguide modes.

    Figure 5.(a) Modal loss coefficientαand (b) propagation distanceLm,at different diameters for each mode in HSP and HE waveguide modes.

    Figure 6.(a) Confinement factor at thresholdΓthand (b) threshold gaingthof the hybrid modes at λ = 380 nm, the values were calculated withgth=αeff/Γeff.

    Figure 7.Snapshots of the HE1 lasing mode electric field intensity distribution in three different section directions. (a)xzplane and (b)yzplane of the cross section of the nanowire-dielectric-metal interface; (c)xyplane inside the dielectric layer (z= 0). The diameter of the ZnO nanowire in the above simulation was set to be 170 nm.

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出版历程
  • 收稿日期:2020-06-18
  • 修回日期:2020-07-27
  • 网络出版日期:2021-02-05
  • 刊出日期:2021-03-23

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