638 nm光栅外腔窄线宽半导体器 -

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638 nm光栅外腔窄线宽半导体器

doi:10.37188/CO.2020-0249

刘野^1,,,
刘宇¹,
肖辉东¹,
李洪玲¹,
曲大鹏¹,
郑权^{1, 2}

1.
长春新产业光电技术有限公司，吉林长春 130012
2.
中国科学院长春光学精密机械与物理研究所，吉林长春 130033

基金项目:吉林省科技发展计划项目（No. 20200401072GX）

详细信息

作者简介:
刘　野(1990—)，女，吉林长春人，工程师，2016年于吉林大学仪器科学与电气工程学院获得硕士学位，现工作于长春新产业光电技术有限公司，主要从事窄线宽半导体器的研究。E-mail：liuye@cnilaser.com

中图分类号:TN248.4
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- 被引次数:0
出版历程
- 收稿日期:2019-12-27
- 修回日期:2020-02-22
- 网络出版日期:2020-11-10
- 刊出日期:2020-12-01

638 nm narrow linewidth diode laser with a grating external cavity

1.
Changchun New Industries Optoelectronics Technology Co., Ltd, Changchun 130012, China
2.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Funds:Jilin Province Science and Technology Development Plan (No. 20200401072GX)

More Information

Corresponding author:liuye@cnilaser.com

摘要

摘要:本文采用反射式全息光栅作为外部反馈元件，设计了638 nm光栅外腔窄线宽器。使用高分辨率的光谱分析仪检测了Littrow结构的外腔半导体器的输出光谱，并进一步研究了该器的阈值和波长调谐特性。实验采用了2400 l/mm和1800 l/mm两种刻线密度的反射式全息光栅进行研究，在120 mA的注入电流下，采用刻线密度为2400 l/mm的光栅外腔器的输出功率是45.2 mW，将阈值电流由60 mA降至51 mA，下降幅度为11%；采用刻线密度为1800 l/mm的光栅外腔器的输出功率是38.7 mW，将阈值电流由60 mA降至47 mA，下降幅度为24%，光谱线宽均压窄至3.5 pm，且分别了实现了9.4 nm和10.5 nm宽度的波长调谐。实验结果表明，采用反射式全息光栅的Littrow结构用于半导体器，极大地改善了半导体器的性能。
- 半导体器/
- 全息光栅/
- Littrow结构/
- 光谱线宽
Abstract:In this paper, a narrow linewidth laser with an external grating cavity of 638 nm is described, wherein a reflection holographic grating was used as its external feedback element. The spectrum of the diode lasers with the grating external cavity arranged in a Littrow configuration were measured using a high-resolution monochromator and the characteristics of the threshold and tuning properties were investigated. In the experiment, reflection holographic gratings with 2400 l/mm and 1800 l/mm groove density were studied. At 120 mA injection current, the output power of the external cavity laser was 45.2 mW when the groove density was 2400 l/mm, and the threshold current of the LD was reduced from 60 mA to 51 mA and the descent rate was 11%. When the groove density was 1800 l/mm, the output power was 38.7 mW, the threshold current of the LD was reduced from 60 mA to 47 mA, and the descent rate was 24%. Furthermore, the linewidths were suppressed to within 3.5 pm, and the tuning ranges were 9.4 nm and 10.5 nm in wavelength. The experimental results showed that the performance of semiconductor lasers was improved greatly using the Littrow configuration with a reflective holographic grating.
- diode laser/
- holographic grating/
- littrow configuration/
- spectral linewidth

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图 1实验装置示意图

Figure 1.Schematic diagram of experiment setup

下载: 全尺寸图片幻灯片

图 2（a）自由运行的LD的P-I特性曲线；（b）不同注入电流下的光谱特性

Figure 2.(a) P-I characteristic curve of the free-running diode laser; (b) spectral characteristics at different currents

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图 3（a）光栅外腔半导体器的P-I特性曲线；（b）2400 l/mm及（c） 1800 l/mm全息光栅外腔器在不同电流下的光谱特性

Figure 3.(a) P-I characteristic curve of the grating external cavity diode laser; spectral characteristic of (b) 2400 l/mm and (c) 1800 l/mm holographic grating external cavity laser at different currents

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图 4（a）波长调谐范围随注入电流的变化情况；当注入电流为70 mA时（b）2400 l/mm及（c） 1800 l/mm全息光栅外腔器归一化光谱图

Figure 4.(a) Wavelength tuning range versus injection current; normalized emission spectra of (b) 2400 l/mm and (c) 1800 l/mm holographic grating external cavity lasers with injection current of 70 mA

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图 5两种不同刻线密度下光栅外腔半导体器阈值电流随激射波长的变化

Figure 5.Threshold current versus lasing wavelength for grating external cavity diode laser with different line densities

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图 6120 mA注入电流下光栅外腔半导体器输出功率随激射波长的变化情况

Figure 6.Output power of grating external cavity diode laser versus lasing wavelength with injection current of 120 mA

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图 7光栅外腔半导体器的输出功率稳定性测试结果

Figure 7.Output power stability of the grating external cavity diode laser

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图 8120 mA注入电流下光栅外腔半导体器的输出光谱特性

Figure 8.Spectral characteristic of the grating external cavity diode laser with injection current of 120 mA

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图 9外腔器的波长及线宽稳定性测试结果

Figure 9.Wavelength stability and line width stability of the external cavity laser

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表 12400 l/mm 全息光栅外腔器与638 nm半导体器参数性能对比结果

Table 1.Performance comparison of 2400 l/mm holographic grating external cavity laser and 638 nm semiconductor laser

	Thresholdcurrent/ mA	Output power/ mW（120mA injection current）	Line width/ nm	Wavelength tuning range/ nm
Diode laser	60	50.6	1.8	3
Diode laser with grating external cavity	51	45.2	0.0035	10

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