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铌酸锂薄膜调制器的研究进展

刘海锋,郭宏杰,谭满清,李智勇

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刘海锋, 郭宏杰, 谭满清, 李智勇. 铌酸锂薄膜调制器的研究进展[J]. , 2022, 15(1): 1-13. doi: 10.37188/CO.2021-0115
引用本文: 刘海锋, 郭宏杰, 谭满清, 李智勇. 铌酸锂薄膜调制器的研究进展[J]. , 2022, 15(1): 1-13.doi:10.37188/CO.2021-0115
LIU Hai-feng, GUO Hong-jie, TAN Man-qing, LI Zhi-yong. Research progress of lithium niobate thin-film modulators[J]. Chinese Optics, 2022, 15(1): 1-13. doi: 10.37188/CO.2021-0115
Citation: LIU Hai-feng, GUO Hong-jie, TAN Man-qing, LI Zhi-yong. Research progress of lithium niobate thin-film modulators[J].Chinese Optics, 2022, 15(1): 1-13.doi:10.37188/CO.2021-0115

铌酸锂薄膜调制器的研究进展

doi:10.37188/CO.2021-0115
基金项目:国家重点研发计划 (No. 2019YFB2203802);国家自然科学基金资助项目 (No. 61934007)
详细信息
    作者简介:

    刘海锋(1983—),男,山东烟台人,博士,副研究员,2007年于北京信息科技大学获得学士学位,2010年于北京航空航天大学光学工程专业获得硕士学位,2020年于中国科学院大学物理电子学专业获得博士学位,主要从事半导体传感模块和光子集成方面研究,E-mail:liuhaifeng@semi.ac.cn

    郭宏杰(1997—),男,山西吕梁人,硕士研究生,2019年于太原理工大学获得学士学位,主要从事铌酸锂相位调制器、光纤传感等方面的研究。E-mail:guohongjie@semi.ac.cn

    谭满清(1967—),男,湖南衡山人,博士,教授,博士生导师。于北京理工大学获得博士学位,1996年在半导体研究所博士后流动站从事研究工作。1998年以后,在半导体研究所工作。目前主要从事半导体光电器件研制及器件物理的研究。E-mail:mqtan@semi.ac.cn

  • 中图分类号:TN29

Research progress of lithium niobate thin-film modulators

Funds:Supported by National Key Research and Development Program of China (No. 2019YFB2203802); National Natural Science Foundation of China (No. 61934007)
More Information
  • 摘要:铌酸锂薄膜调制器具有体积小、带宽高、半波电压低的优点,在光纤通讯和光纤传感领域具有重要应用价值,是近年来的研究热点。本文梳理了铌酸锂薄膜调制器的波导结构、耦合结构、电极结构的研究进展,总结了LN薄膜波导的制备工艺,并深入分析了不同结构调制器的性能。基于SOI和LNOI结构,薄膜调制器实现了 V π L<2 V∙cm,双锥形耦合方案实现了耦合损耗<0.5 dB/facet,行波电极结构实现了调制带宽>100 GHz。铌酸锂薄膜调制器的性能在大多数方面优于目前商用铌酸锂调制器,随着波导工艺进一步提升,将成为铌酸锂调制器的热门方案。最后对铌酸锂薄膜调制器的发展趋势和应用前景进行了展望。

  • 图 1(a)~(c)LNOI结构:(a)置换波导;(b)加载波导;(c)脊形波导。(d)SOI结构

    Figure 1.(a)~(c) LNOI structure: (a) diffused waveguide; (b) loaded waveguide; (c) ridge waveguide. (d) SOI structure

    图 2(a) MZI结构示意图;(b) MI结构示意图

    Figure 2.Schematic diagrams of (a) MZI structure and (b) MI structure

    图 3两种谐振腔输出端口光强分布图[16]。(a)微环结构;(b)光子晶体结构。蓝线为施加电场后波导的光学特性变化曲线

    Figure 3.Light intensity distribution diagram of the output port of the resonant cavity structure waveguide[16]. (a) Microring structure; (b) photonic crystal structure. The blue line is the optical characteristic change curve of the waveguide after an electric field is applied

    图 4(a)锥形耦合模型[19];(b)反锥形耦合模型[19];(c)光栅耦合模型[19];(d)消逝耦合模型[19]

    Figure 4.(a) Tapered coupling model[19]; (b) inverse tapered coupling model[19]; (c) grating coupling model[19]; (d) evanescent coupling model[19]

    图 5光纤与调制器集成方案[29]。(a)调制器结构;(b)光在光纤中传播时的波导结构;(c)光在波导中传播时的波导结构

    Figure 5.Optical fiber and modulator integration scheme[29]. (a) Modulator structure; (b) waveguide structure when light propagates in an optical fiber; (c) waveguide structure when light propagates in a waveguide

    图 6铌酸锂调制器中的电极基础结构。 (a)电场方向平行波导芯层;(b)电场方向垂直波导芯层

    Figure 6.Electrode basic structure of LN modulators. (a) The electric field direction is parallel to the waveguide core; (b) the electric field direction is perpendicular to the waveguide core

    图 7(a)集总电极结构;(b)行波电极结构

    Figure 7.(a) Lumped electrode structure; (b) traveling wave electrode structure

    图 8(a)~(d)CMP工艺流程图和(e)CMP系统结构图[58]

    Figure 8.(a)~(d) CMP process flow chart and (e) CMP system structure diagram[58]

    图 9(a) FIBm前及(b) FIBm后波导图像[59]

    Figure 9.Waveguide image (a) before and (b) after FIBm[59]

    图 10金刚石切割制造波导过程[61]

    Figure 10.Diamond cutting process for manufacturing waveguides[61]

    图 11调制器输出端口光场图。(a) PM;(b) MZM;(c) MIM;(d) MRM;(e) PHCM

    Figure 11.The light field change diagram of the output port of the modulator. (a) PM; (b) MZM; (c) MIM; (d) MRM; (e) PHCM

    表 1不同耦合方案总结

    Table 1.Summary of different coupling schemes

    耦合方案 TE损耗/
    (dB·facet−1)
    LN切向 特点
    边缘耦合:锥形[20] 1.5 X 工艺难度大,损耗低
    边缘耦合:反锥形[25] 0.5 X 工艺难度大,损耗低
    光栅耦合[26] 3.5 Z 工艺成熟,但损耗高
    消逝耦合[28] 1.32 X 工艺难度较大,损耗低
    光纤集成[29] <1.5 X 工艺难度较大,损耗较低
    下载: 导出CSV

    表 2不同刻蚀工艺对比

    Table 2.Comparison of different etching processes

    刻蚀工艺 侧壁倾斜度 损耗/(dB·cm−1) 脊形宽度/μm 特点
    湿法刻蚀[54] NAN $0.3\left({\rm{TE}}\right)$
    $0.9\left({\rm{TM}}\right)$
    6.5 波导尺寸大
    干法刻蚀[57] NAN $0.2\left({\rm{TE}}\right)$ 0.8 损耗小,波导尺寸小
    化学机械抛光(CMP)[53,58] 9~51° $0.027\left({\rm{TE}}\right)$ 3 损耗小,波导尺寸大
    金刚石切割[61] >65° $1.2\left({\rm{TE}}\right)$
    $2.8\left({\rm{TM}}\right)$
    2.1 损耗较大,
    波导容易断裂
    下载: 导出CSV

    表 3不同加载材料损耗比较

    Table 3.Comparison of loss of different loaded materials

    加载材料 损耗(TE)/(dB·cm−1)
    ${\rm{Si}}_{3}{{\rm{N}}}_{4}$[62] $2.25$
    ${\rm{Ti}}{{\rm{O}}}_{2}$[69] $5.8$
    $ {\mathrm{T}\mathrm{a}}_{2}{\mathrm{O}}_{5} $[67] $5$
    硫化物玻璃材料[68] $1.2$
    下载: 导出CSV

    表 4 ${V}_{{\text{π}} }{L}$ 总结

    Table 4. ${V}_{{\text{π}} }{L}$ summary

    论文编号 调制器薄膜
    结构分类
    调制器光学
    结构分类
    ${ V }_{ {\text{π} } }{L}/({\rm{V} }\cdot{\rm{ cm} }$) 年份
    [70] Rib Etch on LNOI MZM 1.75 2021
    [25] Rib Etch on LNOI MZM 2.36 2021
    [62] Rib load on LNOI MZM 2.112 2020
    [71] Rib load on LNOI MZM 3.12 2020
    [72] Rib Etch on LNOI MZM 2.47/2.325 2020
    [73] Rib Etch on LNOI MZM 2.2 2020
    [74] Rib Etch on LNOI MZM 1.6 2019
    [75] TFLN on SOI MZM 2.55 2019
    [13] TFLN on SOI MZM 2.225 2019
    [76] TFLN on SOI MIM 1.2 2019
    [64] Rib load on LNOI MZM 3.6 2019
    [64] Rib Etch on LNOI MZM 4.9 2019
    [47] PE&APE on LNOI MZM 10.2 2019
    [77] Rib Etch on LNOI MIM 1.4 2019
    [12] TFLN on SOI MZM 6.7 2018
    [49] Rib Etch on LNOI MZM 1.8 2018
    [57] Rib Etch on LNOI MZM 2.8/2.3/2.2 2018
    [78] PE&APE on LNOI PM 6.5 2016
    下载: 导出CSV

    表 5可调谐性总结

    Table 5.Tunability summary

    论文编号 调制器薄膜
    结构分类
    调制器光学
    结构分类
    可调谐性/(pm·V−1) 年份
    [79] Rib Etch on LNOI PHCM 16 2020
    [80] Rib Etch on LNOI MRM 9 2020
    [65] Rib load on LNOI MRM 2.9 2019
    [81] Rib Etch on LNOI MRM 3 2019
    [49] Rib Etch on LNOI MRM 2018
    下载: 导出CSV

    表 6光学损耗总结

    Table 6.Summary of optical loss

    论文编号 调制器薄膜
    结构分类
    调制器光学
    结构分类
    光学损耗/dB 年份
    [25] Rib Etch on LNOI MZM 3 2021
    [62] Rib load on LNOI MZM 12.4 2020
    [71] Rib load on LNOI MZM 13.86 2020
    [79] Rib Etch on LNOI PHCM 2.2 2020
    [72] Rib Etch on LNOI MZM 9.7/10.4 2020
    [75] TFLN ON SOI MZM 2.5 2019
    [13] TFLN ON SOI MZM <1 2019
    [76] TFLN ON SOI MIM 3.3 2019
    [77] Rib Etch on LNOI MIM 7.8 2019
    [82] Rib load on LNOI PM >8.4 2016
    下载: 导出CSV

    表 7消光比总结

    Table 7.Summary of OER

    论文编号 调制器薄膜
    结构分类
    调制器光学
    结构分类
    消光比(dB) 年份
    [62] Rib load on LNOI MZM 30 2020
    [79] Rib Etch on LNOI PHCM 11.5 2020
    [80] Rib Etch on LNOI MRM 20 2020
    [76] TFLN ON SOI MIM 6.6 2019
    [49] Rib Etch on LNOI MZM 10 2018
    [57] Rib Etch on LNOI MZM 30 2018
    下载: 导出CSV

    表 83 dB带宽总结

    Table 8.Summary of 3 dB bandwidth

    论文编号 调制器薄膜
    结构分类
    调制器光学
    结构分类
    3 dB带宽/GHz 年份
    [70] Rib Etch on LNOI MZM 40 2021
    [25] Rib Etch on LNOI MZM 60 2021
    [71] Rib load on LNOI MZM 29 2020
    [79] Rib Etch on LNOI PHCM 17.5 2020
    [72] Rib Etch on LNOI MZM 48/67 2020
    [80] Rib Etch on LNOI MRM 28 2020
    [73] Rib Etch on LNOI MZM 67 2020
    [75] TFLN ON SOI MZM >70 2019
    [13] TFLN ON SOI MZM 100 2019
    [76] TFLN ON SOI MIM 17.5 2019
    [64] Rib load on LNOI MZM 5~420 2019
    [64] Rib Etch on LNOI MZM 3~340 2019
    [83] Rib Etch on LNOI PM 30 2019
    [77] Rib Etch on LNOI MIM 12 2019
    [12] TFLN ON SOI MZM 100 2018
    [49] Rib Etch on LNOI MRM 30 2018
    [57] Rib Etch on LNOI MZM 15~80 2018
    下载: 导出CSV

    表 9调制速率总结

    Table 9.Summary of modulation rate

    论文编号 调制器薄膜
    结构分类
    调制器光学
    结构分类
    调制速率/(${\rm{Gbit}}{{\rm{s}}}^{-1}$) 年份
    [71] Rib load on LNOI MZM 29@NRZ 2020
    [72] Rib Etch on LNOI MZM 220@QPSK
    320@QAM
    2020
    [79] Rib Etch on LNOI PHCM 11@NRZ 2020
    [75] TFLN ON SOI MZM 100@OOK
    112@PAM-4
    2019
    [76] TFLN ON SOI MIM 40@OOK 2019
    [77] Rib Etch on LNOI MIM 35@NRZ 2019
    [49] Rib Etch on LNOI MRM 40@NRZ 2018
    下载: 导出CSV
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  • 收稿日期:2021-05-24
  • 修回日期:2021-06-25
  • 网络出版日期:2021-10-16
  • 刊出日期:2022-01-19

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