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摘要:铌酸锂薄膜调制器具有体积小、带宽高、半波电压低的优点，在光纤通讯和光纤传感领域具有重要应用价值，是近年来的研究热点。本文梳理了铌酸锂薄膜调制器的波导结构、耦合结构、电极结构的研究进展，总结了LN薄膜波导的制备工艺，并深入分析了不同结构调制器的性能。基于SOI和LNOI结构，薄膜调制器实现了 V π L<2 V∙cm，双锥形耦合方案实现了耦合损耗<0.5 dB/facet，行波电极结构实现了调制带宽>100 GHz。铌酸锂薄膜调制器的性能在大多数方面优于目前商用铌酸锂调制器，随着波导工艺进一步提升，将成为铌酸锂调制器的热门方案。最后对铌酸锂薄膜调制器的发展趋势和应用前景进行了展望。Abstract:Electro-optic modulators based on lithium niobate (LiNbO 3, LN) thin-film platforms are advantageous for their small volume, high bandwidth and low half-wave voltage. They have important application prospects in the field of optical fiber communication and optical fiber sensing, and thus have became a heavily researched topic in recent years. In this paper, the research progress of the waveguide structures, coupling structures and electrode structures of LN thin-film modulators are reviewed in detail. The fabrication process of a LN thin-film waveguide is summarized, and the performances of different modulator structures are analyzed. Based on SOI and LNOI, a platform modulator is realized with V π L<2 V∙cm, a bilayer inversely tapered coupling scheme achieves a coupling loss <0.5 dB/facet , and a traveling wave electrode structure achieves a modulation bandwidth >100 GHz. Thin-film LN modulators are better than commercial LN modulators in most aspects. It can be predicted that in the near future, with the further improvement in waveguide technology, thin-film LN will become a popular scheme of LN modulators. Finally, the potential directions for the future of their research are proposed.
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Key words:
- lithium niobate thin-film/
- LNOI/
- electro-optic modulator
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图 1(a)~(c)LNOI结构：(a)置换波导；(b)加载波导；(c)脊形波导。(d)SOI结构
Figure 1.(a)~(c) LNOI structure: (a) diffused waveguide; (b) loaded waveguide; (c) ridge waveguide. (d) SOI structure
图 2(a) MZI结构示意图；(b) MI结构示意图
Figure 2.Schematic diagrams of (a) MZI structure and (b) MI structure
图 3两种谐振腔输出端口光强分布图[16]。(a)微环结构；(b)光子晶体结构。蓝线为施加电场后波导的光学特性变化曲线
Figure 3.Light intensity distribution diagram of the output port of the resonant cavity structure waveguide[16]. (a) Microring structure; (b) photonic crystal structure. The blue line is the optical characteristic change curve of the waveguide after an electric field is applied
图 6铌酸锂调制器中的电极基础结构。 (a)电场方向平行波导芯层；(b)电场方向垂直波导芯层
Figure 6.Electrode basic structure of LN modulators. (a) The electric field direction is parallel to the waveguide core; (b) the electric field direction is perpendicular to the waveguide core
图 7(a)集总电极结构；(b)行波电极结构
Figure 7.(a) Lumped electrode structure; (b) traveling wave electrode structure
图 11调制器输出端口光场图。(a) PM；(b) MZM；(c) MIM；(d) MRM；(e) PHCM
Figure 11.The light field change diagram of the output port of the modulator. (a) PM; (b) MZM; (c) MIM; (d) MRM; (e) PHCM
表 2不同刻蚀工艺对比
Table 2.Comparison of different etching processes
刻蚀工艺 侧壁倾斜度 损耗/(dB·cm−1) 脊形宽度/μm 特点 湿法刻蚀[54] NAN $0.3\left({\rm{TE}}\right)$
$0.9\left({\rm{TM}}\right)$6.5 波导尺寸大 干法刻蚀[57] NAN $0.2\left({\rm{TE}}\right)$ 0.8 损耗小，波导尺寸小 化学机械抛光(CMP)[53,58] 9~51° $0.027\left({\rm{TE}}\right)$ 3 损耗小，波导尺寸大 金刚石切割[61] >65° $1.2\left({\rm{TE}}\right)$
$2.8\left({\rm{TM}}\right)$2.1 损耗较大，
波导容易断裂
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表 4
${V}_{{\text{π}} }{L}$ 总结Table 4.
${V}_{{\text{π}} }{L}$ summary论文编号 调制器薄膜
结构分类调制器光学
结构分类${ V }_{ {\text{π} } }{L}/({\rm{V} }\cdot{\rm{ cm} }$) 年份 [70] Rib Etch on LNOI MZM 1.75 2021 [25] Rib Etch on LNOI MZM 2.36 2021 [62] Rib load on LNOI MZM 2.112 2020 [71] Rib load on LNOI MZM 3.12 2020 [72] Rib Etch on LNOI MZM 2.47/2.325 2020 [73] Rib Etch on LNOI MZM 2.2 2020 [74] Rib Etch on LNOI MZM 1.6 2019 [75] TFLN on SOI MZM 2.55 2019 [13] TFLN on SOI MZM 2.225 2019 [76] TFLN on SOI MIM 1.2 2019 [64] Rib load on LNOI MZM 3.6 2019 [64] Rib Etch on LNOI MZM 4.9 2019 [47] PE&APE on LNOI MZM 10.2 2019 [77] Rib Etch on LNOI MIM 1.4 2019 [12] TFLN on SOI MZM 6.7 2018 [49] Rib Etch on LNOI MZM 1.8 2018 [57] Rib Etch on LNOI MZM 2.8/2.3/2.2 2018 [78] PE&APE on LNOI PM 6.5 2016 下载:
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表 6光学损耗总结
Table 6.Summary of optical loss
论文编号 调制器薄膜
结构分类调制器光学
结构分类光学损耗/dB 年份 [25] Rib Etch on LNOI MZM 3 2021 [62] Rib load on LNOI MZM 12.4 2020 [71] Rib load on LNOI MZM 13.86 2020 [79] Rib Etch on LNOI PHCM 2.2 2020 [72] Rib Etch on LNOI MZM 9.7/10.4 2020 [75] TFLN ON SOI MZM 2.5 2019 [13] TFLN ON SOI MZM <1 2019 [76] TFLN ON SOI MIM 3.3 2019 [77] Rib Etch on LNOI MIM 7.8 2019 [82] Rib load on LNOI PM >8.4 2016 下载:
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表 83 dB带宽总结
Table 8.Summary of 3 dB bandwidth
论文编号 调制器薄膜
结构分类调制器光学
结构分类3 dB带宽/GHz 年份 [70] Rib Etch on LNOI MZM 40 2021 [25] Rib Etch on LNOI MZM 60 2021 [71] Rib load on LNOI MZM 29 2020 [79] Rib Etch on LNOI PHCM 17.5 2020 [72] Rib Etch on LNOI MZM 48/67 2020 [80] Rib Etch on LNOI MRM 28 2020 [73] Rib Etch on LNOI MZM 67 2020 [75] TFLN ON SOI MZM >70 2019 [13] TFLN ON SOI MZM 100 2019 [76] TFLN ON SOI MIM 17.5 2019 [64] Rib load on LNOI MZM 5~420 2019 [64] Rib Etch on LNOI MZM 3~340 2019 [83] Rib Etch on LNOI PM 30 2019 [77] Rib Etch on LNOI MIM 12 2019 [12] TFLN ON SOI MZM 100 2018 [49] Rib Etch on LNOI MRM 30 2018 [57] Rib Etch on LNOI MZM 15~80 2018 下载:
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表 9调制速率总结
Table 9.Summary of modulation rate
论文编号 调制器薄膜
结构分类调制器光学
结构分类调制速率/(${\rm{Gbit}}{{\rm{s}}}^{-1}$) 年份 [71] Rib load on LNOI MZM 29@NRZ 2020 [72] Rib Etch on LNOI MZM 220@QPSK
320@QAM2020 [79] Rib Etch on LNOI PHCM 11@NRZ 2020 [75] TFLN ON SOI MZM 100@OOK
112@PAM-42019 [76] TFLN ON SOI MIM 40@OOK 2019 [77] Rib Etch on LNOI MIM 35@NRZ 2019 [49] Rib Etch on LNOI MRM 40@NRZ 2018 下载:
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