高效率蓝光硅光探测器外延结构及特性研究 -

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高效率蓝光硅光探测器外延结构及特性研究

陈伟帅^{1, 2, †,},
王浩冰^{1, 2, †,},
陶金¹,
高丹¹,
吕金光¹,
秦余欣¹,
郭广通^{1, 2},
李香兰^{1, 2},
王强¹,
张军³,
梁静秋^1,,,
王惟彪^1,,

1.
中国科学院长春光学精密机械与物理研究所, 应用光学国家重点实验室, 长春 130033
2.
中国科学院大学, 北京 100049
3.
暨南大学理工学院, 广州市可见光通信工程技术重点实验室, 广州 510632

详细信息

中图分类号:TP394.1;TH691.9
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出版历程
- 收稿日期:2021-11-01
- 修回日期:2021-12-07
- 网络出版日期:2022-03-01
- 刊出日期:2022-05-20

A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors

doi:10.37188/CO.2021-0188

CHEN Wei-shuai^{1, 2, †,},
WANG Hao-bing^{1, 2, †,},
TAO Jin¹,
Gao Dan¹,
LV Jin-guang¹,
QIN Yu-xin¹,
GUO Guang-tong^{1, 2},
LI Xiang-lan^{1, 2},
WANG Qiang¹,
ZHANG Jun³,
LIANG Jing-qiu^1,,,
WANG Wei-biao^1,,

1.
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China
3.
Collage of Science & Engineering, Jinan University, Guangzhou Key Laboratory of Visible Light Communication Engineering Technology, Guangzhou 510632, China

Funds:Supported by National Key Research and Development Program (No. 2018YFB1801902, No. 2018YFB1801901, No. 2019YFB2006003); Science and Technology Development Program Project (No. 20190302062GX); Youth Project of National Natural Science Foundation of China (NSFC) (No. 12004139); Science and Technology Plan Program Project of Guangdong Province (No. 2016B010111003)

More Information

Author Bio:
CHEN Wei-shuai (1994—), male, from Liaocheng, Shandong province, graduated from Shandong Jianzhu University in 2018 with a Bachelor of Science degree. Now he is a PhD student of Changchun Institute of Optics, Fine Mechanic and Physics, Chinese Academy of Sciences. He is mainly engaged in the research of nanophotonics and semiconductor photodetectors. E-mail：chenws159@163.com
WANG Hao-bing (1994—), male, born in Songyuan, Jilin, master degree, in 2020, received a master degree from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (now he is in University of Technology of Troyes (France) - University of Reims (France) to continue his studies). His research interests include nanophotonics and semiconductor photodetectors. E-mail:996490955@qq.com
Liang Jingqiu (1962—), female, born in Changchun, Jilin Province, Ph.D., researcher, doctoral supervisor, received a Ph.D. from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 2003, and is currently a researcher at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. She is mainly engaged in micro/nano optical structure, device and system research, infrared spectroscopy/imaging spectroscopy technology and infrared optical instrument research, micro LED micro display chip and application research and visible light communication device and system research. E-mail:liangjq@ciomp.ac.cn
Wang Wei-biao (1962—), male, born in Yangzhou, Jiangsu, Ph.D., researcher, doctoral supervisor, received a Ph.D. from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 1999, and now he is a researcher at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. His research interests include optoelectronic materials and devices, photodetectors, LED array chip integration and applications, photonic crystals, micro-nano photonics, field emission materials and electron emission characteristics. E-mail:wangwb@ciomp.ac.cn

Corresponding author:liangjq@ciomp.ac.cn;wangwb@ciomp.ac.cn

摘要

摘要:为了实现硅基雪崩光电二极管蓝光波段（400~500 nm）高光响应度，设计了SACM型基本器件结构，探究了倍增层厚度对器件的雪崩击穿电压及光电流增益的影响及倍增层掺杂浓度对光响应度的影响，综合考虑光响应度和击穿电压的因素，结果表明：当表面非耗尽层掺杂浓度为1.0×10 ¹⁸cm ⁻³、厚度为0.03 μm；吸收层掺杂浓度为1.0×10 ¹⁵cm ⁻³、厚度为1.3 μm；场控层掺杂浓度为8.0×10 ¹⁶cm ⁻³、厚度为0.2 μm；倍增层掺杂浓度为1.8×10 ¹⁶cm ⁻³、厚度为0.5 μm时，器件具有较低的击穿电压 V _br-apd=34.2 V。当 V _apd=0.95 V _br-apd，该结构在蓝光波段具较高的光响应度（ SR=3.72~6.08 A·W ⁻¹）。上述研究结果对高蓝光探测响应度Si-APD实际器件的制备具有一定的参考价值。
- 雪崩光电二极管/
- 硅/
- 光谱响应度
Abstract:In order to achieve high spectral responsivity of the silicon avalanche photodiode in blue band (400−500 nm), Separated Absorption Control Multiplication (SACM) basic device structure was designed. Based on multiple physical models, the effect of the thickness on the avalanche breakdown voltage and the photocurrent gain of the device and the effect of the doping concentration of the multiplication layer on the optical responsivity were investigated. Comprehensively considering the factors of light responsivity and breakdown voltage, the results show that the device has a low breakdown voltage V _br-apd=34.2 V when the doping concentration of the surface non-depleted layer is 1.0×10 ¹⁸cm ⁻³, and the thickness is 0.03 μm; the doping concentration of absorption layer is 1.0×10 ¹⁵cm ⁻³, the thickness is 1.3 μm, the doping concentration of field control layer is 8.0×10 ¹⁶cm ⁻³, the thickness is 0.2 μm and the doping concentration of double layer is 1.8×10 ¹⁶cm ⁻³and the thickness is 0.5 μm. When V _apd=0.95 V _br-apd, it has higher optical responsivity in blue band, i.e. SRis 3.72~6.08 A·W ⁻¹. The above research results provide certain theoretical reference for the preparation of practical Si-APD devices with high blue light detection responsivity.
- avalanche photodiode/
- silicon/
- spectral response
注释:

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图 1SACM-APD基本外延结构

Figure 1.The basic epitaxial structure of SACM type Si-APD

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图 2Si基APD内部电场分布

Figure 2.The distribution of electric field in Si-APD

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图 3硅表面反射率及吸收系数随入射波长的变化情况

Figure 3.The surface reflectance and absorption coefficient of the silicon vary with different incident wavelengthes

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图 4不同入射波长的量子效率与耗尽层厚度的关系

Figure 4.The relationship between quantum efficient and incident wavelength under different depletion layer thicknesses

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图 5在不同耗尽层厚度下，光响应度与入射波长的关系

Figure 5.The relationship between spectral response and incident wavelength under different depletion layer thicknesses

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图 6倍增层厚度与倍增系数M的关系

Figure 6.The relationship between the thickness of multiplication layer and multiplication factorM

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图 7载流子获得能量ΔE与倍增层掺杂浓度的关系

Figure 7.Relationship between carrier energy ΔEand multiplication layer doping concentration

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图 8不同吸收层掺杂浓度下吸收层的场强分布

Figure 8.Field intensity distribution of the absorption layer under different doping concentrations

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图 9不同外加偏压下Si-APD的场强分布

Figure 9.The field strength distribution of Si-APD under different applied bias voltages

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图 10不同表面层厚度Si-APD的光谱响应曲线

Figure 10.Effect of thickness of surface layers of Si-APD on spectral responsivity

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图 11倍增层掺杂浓度对光响应度的影响

Figure 11.Effect of doping concentration of multiplication layer on spectral responsivity

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图 12Si-APD暗电流的 I-V曲线

Figure 12.The dark current I-V curve of Si-APD

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图 13(a) 不同倍增层偏压下倍增层内电子离化系数; (b) 不同倍增层偏压下倍增层内空穴离化系数

Figure 13.(a) Electron ionization coefficients in the multiplication layer under different bias voltages; (b) hole ionization coefficients in the multiplication layer under different bias voltages.

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表 1Parameters of Si-APD layers

Table 1.Parameters of Si-APD layers

Parameter	Thickness/μm	Doping type	Impurity concentration/ (cm⁻³)
W_s	0.06	p++	N_p++= 1.0×10¹⁸
W_a	1.30	p-	N_π= 1.0×10¹⁵
W_c	0.20	p+	N_p+= 8.0×10¹⁶
W_m	0.50	p	N_p= 1.8×10¹⁶
W_sub	20.00	n++	N_n++= 1.0×10¹⁹

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表 2Parameters of Si-APD layers

Table 2.Parameters of Si-APD layers

Parameter	Thickness/μm	Doping type	Impurity concentration/ (cm⁻³)
W_s	0.03	p++	N_p++= 1.0×10¹⁸
W_a	1.30	p-	N_π= 1.0×10¹⁵
W_c	0.20	p+	N_p+= 8.0×10¹⁶
W_m	0.50	p	N_p= 1.8×10¹⁶
W_sub	20.00	n++	N_n++= 1.0×10¹⁹

下载: 导出CSV

参考文献 (40)

[1]	DENG J ZH, CHENG X H. Visible light vehicle lamp signal transmission control device[J].Optics and Precision Engineering, 2020, 28(12): 2710-2718. (in Chinese)doi:10.37188/OPE.20202812.2710
[2]	DONG B, TONG SH F, ZHANG P,et al. Design of a 20 m underwater wireless optical communication system based on blue LED[J].Chinese Optics, 2021, 14(6): 1451-1458. (in Chinese)doi:10.37188/CO.2020-0190
[3]	LIU Y, CAI X P, LIN L,et al. Research on the fusion technology of LED visible optical communication network with Ethernet[J].Optical Communication Technology, 2019, 43(1): 1-4. (in Chinese)
[4]	XU X Y, YUE D W. Orthogonal frequency division multiplexing modulation techniques in visible light communication[J].Chinese Optics, 2021, 14(3): 516-527. (in Chinese)doi:10.37188/CO.2020-0051
[5]	ZHOU ZH, MIAO W N, LI Y,et al. Influence mechanism of GaN-LED's PN junction area on modulation bandwidth in visible light communication[J].Optics and Precision Engineering, 2020, 28(7): 1494-1499. (in Chinese)doi:10.37188/OPE.20202807.1494
[6]	ZHOU Q CH, BAI Z L, LU L,et al. Remote phosphor technology for white LED applications: advances and prospects[J].Chinese Optics, 2015, 8(3): 313-328. (in Chinese)doi:10.3788/co.20150803.0313
[7]	CHEN X B, MIN CH Y. Wireless communication that we can see——visible light communication[J].Physics, 2020, 49(10): 688-696. (in Chinese)doi:10.7693/wl20201005
[8]	GAO X M.Study on silicon based nitride homologous optoelectronic integrated chip for visible light communication[D]. Nanjing: Nanjing University of Posts and Telecommunications, 2018. (in Chinese)
[9]	ZIMMERMANN R, BRAUN F, ACHTNICH T,et al. Silicon photomultipliers for improved detection of low light levels in miniature near-infrared spectroscopy instruments[J].Biomedical Optics Express, 2013, 4(5): 659-666.doi:10.1364/BOE.4.000659
[10]	WEI J T.The structure design and research of new type APD based on silicon and germanium[D]. Harbin: Harbin Engineering University, 2016. (in Chinese)
[11]	ZHU X X, GE Y, LI J J,et al. Research progress of quantum dot enhanced silicon-based photodetectors[J].Chinese Optics, 2020, 13(1): 62-74. (in Chinese)doi:10.3788/co.20201301.0062
[12]	WANG Y M, SHU H W, HAN X Y. High-precision silicon-based integrated optical temperature sensor[J].Chinese Optics, 2021, 14(6): 1355-1361. (in Chinese)doi:10.37188/CO.2021-0054
[13]	MOLL J L, VAN OVERSTRAETEN R. Charge multiplication in silicon p-n junctions[J].Solid-State Electronics, 1963, 6(2): 147-157.doi:10.1016/0038-1101(63)90009-1
[14]	PEPIN C M, DAUTET H, BERGERON M,et al.. New UV-enhanced, ultra-low noise silicon avalanche photodiode for radiation detection and medical imaging[C].IEEE Nuclear Science Symposuim & Medical Imaging Conference, IEEE, 2010: 1740-1746.
[15]	OTHMAN M A, YASIN N Y M, ARSHAD T S M,et al.. Variable intrinsic region in CMOS PIN photodiode for I–V characteristic analysis[C].Proceedings of the 1st International Conference on Communication and Computer Engineering, Springer, 2015: 95-101.
[16]	WANG X D.Optimization of the enhancement of the Si-based APD for near-ultraviolet detection through structural design[D]. Harbin: Harbin Institute of Technology, 2015. (in Chinese)
[17]	HUO L ZH, TAN H SH, HE R,et al. Research of blue-violet enhanced silicon photomultiplier[J].Laser&Optoelectronics Progress, 2015, 52(11): 110401. (in Chinese)
[18]	LU H H.Simulation study on silicon-based blue-light enhanced APD detector for visible light communication[D]. Guangzhou: Jinan University, 2019. (in Chinese)
[19]	SCHINKE C, PEEST P C, SCHMIDT J,et al. Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon[J].AIP Advances, 2015, 5(6): 067168.doi:10.1063/1.4923379
[20]	CHEN F.The enhancement of the APD for Blu-Ray detection in VLC[D]. Changchun: Changchun University of Science and Technology, 2018. (in Chinese)
[21]	WANG H B.Research on enhancement in blue-light properties of silicon based avalanche photodiode[D]. Beijing: University of Chinese Academy of Sciences (Changchun Institute of Optics, Precision Machinery and Physics, Chinese Academy of Sciences), 2020. (in Chinese)
[22]	SHI Y L, ZHU H X, YANG X Y,et al. InP-based free running mode single photon avalanche photodiode[J].Infrared and Laser Engineering, 2020, 49(1): 0103005. (in Chinese)
[23]	LIU E K, ZHU D SH, LUO J SH.Physics of Semiconductors[M]. 7th ed. Beijing: Publishing House of Electronics Industry, 2017: 66-67. (in Chinese)
[24]	CHYNOWETH A G. Chapter 4 charge multiplication phenomena[J].Semiconductors and Semimetals, 1968, 4: 263-325.
[25]	YANG M.The research of silicon avalanche photodiode single photon detector on space quantum communication[D]. Hefei: University of Science and Technology of China, 2019. (in Chinese)
[26]	LI Y.Theoretical and experimental study on avalanche photodiodes and optimization design[D]. Wuhan: Huazhong University of Science and Technology, 2017. (in Chinese)
[27]	SZE S M, NG K K.Physics of Semiconductor Devices[M]. GENG L, ZHANG R ZH, trans. 3rd ed. Xi'an: Xi'an Jiaotong University Press, 2008. (in Chinese)
[28]	WOODS M H, JOHNSON W C, LAMPERT M A. Use of a Schottky barrier to measure impact ionization coefficients in semiconductors[J].Solid-State Electronics, 1973, 16(3): 381-394.doi:10.1016/0038-1101(73)90013-0
[29]	FOSSUM J G, MERTENS R P, LEE D S,et al. Carrier recombination and lifetime in highly doped silicon[J].Solid-State Electronics, 1983, 26(6): 569-576.doi:10.1016/0038-1101(83)90173-9
[30]	OLDHAM W G, SAMUELSON R R, ANTOGNETTI P. Triggering phenomena in avalanche diodes[J].IEEE Transactions on Electron Devices, 1972, 19(9): 1056-1060.doi:10.1109/T-ED.1972.17544
[31]	GAO D, ZHANG J, WANG F,et al. Design and simulation of ultra-thin and high-efficiency silicon-based trichromatic PIN photodiode arrays for visible light communication[J].Optics Communications, 2020, 475: 126296.doi:10.1016/j.optcom.2020.126296
[32]	VAN OVERSTRAETEN R, DE MAN H. Measurement of the ionization rates in diffused siliconp-njunctions[J].Solid-State Electronics, 1970, 13(5): 583-608.doi:10.1016/0038-1101(70)90139-5
[33]	SELBERHERR S.Analysis and Simulation of Semiconductor Devices[M]. Vienna: Springer, 1984.
[34]	HALL R N. Electron-hole recombination in germanium[J].Physical Review, 1952, 87(2): 387.
[35]	SHOCKLEY W, READ JR W T. Statistics of the recombinations of holes and electrons[J].Physical Review, 1952, 87(5): 835-842.doi:10.1103/PhysRev.87.835
[36]	ARORA N D, HAUSER J R, ROULSTON D J. Electron and hole mobilities in silicon as a function of concentration and temperature[J].IEEE Transactions on Electron Devices, 1982, 29(2): 292-295.doi:10.1109/T-ED.1982.20698
[37]	CAUGHEY D M, THOMAS R E. Carrier mobilities in silicon empirically related to doping and field[J].Proceedings of the IEEE, 1967, 55(12): 2192-2193.doi:10.1109/PROC.1967.6123
[38]	MASETTI G, SEVERI M, SOLMI S. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon[J].IEEE Transactions on Electron Devices, 1983, 30(7): 764-769.doi:10.1109/T-ED.1983.21207
[39]	FORREST S. Performance of InxGa1-xAsyP1-yphotodiodes with dark current limited by diffusion, generation recombination, and tunneling[J].IEEE Journal of Quantum Electronics, 1981, 17(2): 217-226.doi:10.1109/JQE.1981.1071060
[40]	GU H Q.The study of avalanche gain and structural parameter optimization in Si based micro-pixel APD[D]. Harbin: Harbin Institute of Technology, 2012. (in Chinese)