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光损伤肖特基钙钛矿探测器的光电特性分析

曲家沂,王云鹏,孙俊杰,陈飞,赵东旭,田灿灿

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曲家沂, 王云鹏, 孙俊杰, 陈飞, 赵东旭, 田灿灿. 光损伤肖特基钙钛矿探测器的光电特性分析[J]. , 2022, 15(4): 668-674. doi: 10.37188/CO.2021-0196
引用本文: 曲家沂, 王云鹏, 孙俊杰, 陈飞, 赵东旭, 田灿灿. 光损伤肖特基钙钛矿探测器的光电特性分析[J]. , 2022, 15(4): 668-674.doi:10.37188/CO.2021-0196
QU Jia-yi, WANG Yun-peng, SUN Jun-jie, CHEN Fei, ZHAO Dong-xu, TIAN Can-can. Analysis of photoelectric characteristics of a light-damaged schottky perovskite detector[J]. Chinese Optics, 2022, 15(4): 668-674. doi: 10.37188/CO.2021-0196
Citation: QU Jia-yi, WANG Yun-peng, SUN Jun-jie, CHEN Fei, ZHAO Dong-xu, TIAN Can-can. Analysis of photoelectric characteristics of a light-damaged schottky perovskite detector[J].Chinese Optics, 2022, 15(4): 668-674.doi:10.37188/CO.2021-0196

光损伤肖特基钙钛矿探测器的光电特性分析

doi:10.37188/CO.2021-0196
基金项目:中国科学院创新交叉团队(No. JCTD-2020-13);自然科学基金面上项目(No. 11874352);国家自然科学基金青年基金(No. 61805237);中科院长春光机所重大创新项目(No. E10302Y3M0)
详细信息
    作者简介:

    曲家沂(1997—),女,吉林延吉人,硕士研究生,2019年于长春理工大学获得理学学士学位,主要从事新型 技术方面的研究。E-mail:qujiayi000@163.com

    王云鹏(1985—),男,吉林长春人,博士,助理研究员,2008年于吉林大学获得学士学位,2014年于物理所获得博士学位,主要从事红外 开发研制及超快 的研制及相关化学、生物超快动力学方面的研究。E-mail:wangyunpeng@ciomp.ac.cn

    孙俊杰(1994—),女,吉林长春人,硕士,助理研究员,2015 年于武汉大学获得学士学位,2017 年于国防科技大学获得硕士学位,主要从事新型 技术方面的研究。E-mail:15143115236@163.com

  • 中图分类号:TP394.1;TH691.9

Analysis of photoelectric characteristics of a light-damaged schottky perovskite detector

Funds:Supported by Innovative Cross Team of the Chinese Academy of Sciences (No. JCTD-2020-13); National Natural Science Foundation of China (No. 11874352, No. 61805237), Innovation Project of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (No. E10302Y3M0)
More Information
  • 摘要:

    为了研究飞秒 对光电探测器光学性能的影响,本文对飞秒脉冲 辐照CsPbBr3背靠背肖特基光电探测器的损伤特性,以及不同 功率密度下的光电性能进行了研究。利用化学气相沉积法在ITO叉指电极上沉积CsPbBr3微米晶薄膜,制备了背靠背肖特基型全无机钙钛矿光电探测器。利用脉冲宽度为35 fs的钛宝石飞秒 器辐照CsPbBr3光电探测器,通过显微镜观察不同 功率密度下CsPbBr3多晶薄膜的损伤形貌,并研究了不同功率密度损伤下肖特基结构的钙钛矿光电探测器的光电性能变化。结果表明:自制的全无机金属卤化物肖特基光电探测器具有较高的损伤阈值,达到了2.1 W/cm2,并且在样品轻度损伤的情况下,样品的光电特性出现了一定程度的提升,光谱响应度出现了50 nm的展宽,并且在部分薄膜受热脱落后,器件仍然保持一定的光电探测性能。

  • 图 1基于CsPbBr3微米晶薄膜的光探测器示意图

    Figure 1.Schematic diagram of a photodetector based on CsPbBr3microcrystal film

    图 2(a)CsPbBr3微米晶薄膜的SEM形貌;(b)CsPbBr3微米晶薄膜的XRD图谱

    Figure 2.(a) Typical SEM images showing the morphology of CsPbBr3microcrystal films; (b) XRD spectrum of CsPbBr3microcrystal films

    图 3飞秒 损伤系统原理图

    Figure 3.Schematic of the femtosecond laser damage experiment setup

    图 4连续光开关实验系统原理图

    Figure 4.Schematic of the reproducible on/off switch of the device

    图 5功率密度为(a) 0 W/cm2、(b) 2.1 W/cm2、(c) 2.6 W/cm2和(d) 3.2 W/cm2 辐照后表面形貌对比

    Figure 5.Micrograph of a sample irradiated by femtosecond pulse lasers with power densities of (a) 0 W/cm2, (b) 2.1 W/cm2, (c) 2.6 W/cm2and (d) 3.2 W/cm2

    图 6不同功率密度的飞秒 损伤后样品的光谱响应度

    Figure 6.Spectral responsivity of a sample after being damaged by a femtosecond laser with different power densities

    图 7功率密度为(a) 0 W/cm2、(b) 2.1 W/cm2、(c) 2.6 W/cm2和(d) 3.2 W/cm2的飞秒 辐照后样品光电流产生情况

    Figure 7.Photocurrent generation of a sample irradiated by femtosecond laser irradiation under power densities of (a) 0 W/cm2, (b) 2.1 W/cm2, (c) 2.6 W/cm2and (d) 3.2 W/cm2

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出版历程
  • 收稿日期:2021-11-09
  • 录用日期:2022-01-06
  • 修回日期:2021-12-01
  • 网络出版日期:2022-01-08

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