-
摘要:
膜厚均匀性作为高精度光学薄膜的重要参数，对光学薄膜的性能起到至关重要的作用，特别是大尺寸高精度反射膜，对膜厚均匀性的要求极高。本文通过研究蒸发源的发射特性与膜厚分布，结合Mathcad软件建立精准数学及物理模型，编写自动程序，模拟修正挡板形状，极大地提高了薄膜制备均匀性修正的效率与准确性。通过该方法，在公自转行星蒸发沉积设备上制备了直径为320 mm的非球面深紫外反射镜，在紫外(240~300 nm)波段平均反射率大于97.5%，均匀性优于0.5%。本研究对大口径非球面薄膜的均匀性修正提供了理论基础与技术支撑。
Abstract:As an important parameter of high-precision optical films, thickness uniformity plays a vital role in their performance. Large-size high-precision reflective films have especially high requirements for thickness uniformity. In this paper, the efficiency and accuracy of the uniformity correction of thin films are greatly improved by studying the emission characteristics and film thickness distribution of the evaporation source, combining Mathcad software to establish precise mathematical and physical models, writing automatic programs, and simulating the correcting mask shape. Through this method, an aspherical deep ultraviolet reflector with a diameter of 320 mm is prepared on public autobiographical planetary evaporation deposition equipment. The average reflectance at 240−300 nm ultraviolet waveband is greater than 97.5%, and the uniformity is better than 0.5%. This research provides a theoretical basis and technical support for the uniformity correction of large aperture aspheric films.
-
Key words:
- thin film/
- uniformity/
- mask/
- large aperture/
- aspheric
-
图 4OTFC-1300公自转行星设备示意图
Figure 4.Schematic diagram of the OTFC-1300 revolution planetary instrument
图 5（a）HfO2和（b）SiO2的相对膜厚分布
Figure 5.The relative film thickness distributions of (a) HfO2and (b) SiO2
表 1公自转行星结构运动轨迹
Table 1.The orbit of revolution of a planetary structure
Geometry Trajectory Coordinates of any point on the substrate holder ${x_{{p} } } = D\sin\; {\omega _1}t + \rho \sin \;({\omega _1}t + {\omega _2}t)$
${y_{{p} } } = D\cos \;{\omega _1}t + \rho \cos\; \left( { {\omega _1}t + {\omega _2}t} \right)$
${\textit{z}_p} = H$Evaporation distance $\sqrt { { {\left( { {x_{ {p} } } } \right)}^2} + { {\left( { {y_{ {p} } } - L} \right)}^2} + { {\left( { {\textit{z}_{ {p} } } } \right)}^2} }$ Evaporation angle $\mathrm{cos}\;\varphi=\dfrac{\boldsymbol{D}\cdot\boldsymbol{PP_{{\rm{s}}} } }{\left|\boldsymbol{D}\right|\left|\boldsymbol{PP_{{\rm{s}}} }\right|}$ Projected angle $\mathrm{cos}\;\theta =\dfrac{\boldsymbol{D}\cdot\boldsymbol{PP_{ {\rm{s} } } } }{\left|\boldsymbol{D}\right|\left|\boldsymbol{PP_{ {\rm{s} } } }\right|}$ 
下载:
导出CSV
表 2大尺寸非球面反射镜技术参数
Table 2.The technical parameters of the large aspherical mirror
Parameters Indicators Substrate JGS1 Angle of incidence /(°) 0 Spectral range /nm 230~300 Reflectance ≥97.5% Heterogeneity ≤0.5% 下载:
导出CSV
表 3薄膜制备工艺参数
Table 3.The process parameters of thin film preparation
Material Ion source voltage
/VIon
source current
/mAIon source O2gas flow
/ml·min−1O2gas flow
/ml·min−1Substrate temperature/°C Deposition rate
/nm·s−1HfO2 500 400 50 50 200 0.12 SiO2 500 400 50 0 200 0.8 下载:
导出CSV
-
[1] 彭祎帆, 袁波, 曹向群. 光刻机技术现状及发展趋势[J]. 光学仪器,2010,32(4):80-85.PENG Y F, YUAN B, CAO X Q. Technical status and developing trend of lithographic tools[J].Optical Instruments, 2010, 32(4): 80-85. (in Chinese) [2] 程伟林, 张方, 林栋梁, 等. 光刻机照明光场均匀性高精度校正方法研究[J]. 光学学报,2018,38(7):0722001.doi:10.3788/AOS201838.0722001CHENG W L, ZHANG F, LIN D L,et al. High precision correction method of illumination field uniformity for photolithography illumination system[J].Acta Optica Sinica, 2018, 38(7): 0722001. (in Chinese)doi:10.3788/AOS201838.0722001 [3] 秦朗. 半导体芯片制造过程中的关键——光刻技术[J]. 数码设计,2019,8(7):99.QIN L. The key to the manufacturing process of semiconductor chips—lithography[J].Peak Data Science, 2019, 8(7): 99. (in Chinese) [4] 王晓洋, 刘丽娟. 深紫外非线性光学晶体及全固态深紫外相干光源研究进展[J]. 中国光学,2020,13(3):427-441.WANG X Y, LIU L J. Research progress of deep-UV nonlinear optical crystals and all-solid-state deep-UV coherent light sources[J].Chinese Optics, 2020, 13(3): 427-441. (in Chinese) [5] 宗楠, 胡蔚敏, 王志敏, 等. 等离子体13.5nm极紫外光刻光源进展[J]. 中国光学,2020,13(1):28-42.doi:10.3788/co.20201301.0028ZONG N, HU W M, WANG ZH M,et al. Research progress on laser-produced plasma light source for 13.5 nm extreme ultraviolet lithography[J].Chinese Optics, 2020, 13(1): 28-42. (in Chinese)doi:10.3788/co.20201301.0028 [6] 殷长帅, 周剑, 刘翊, 等. 声表面波紫外光探测器的研究进展[J]. 光学 精密工程,2020,28(7):1433-1445.doi:10.37188/OPE.20202807.1433YIN CH SH, ZHOU J, LIU Y,et al. Research progress of surface acoustic wave ultraviolet detectors[J].Optics and Precision Engineering, 2020, 28(7): 1433-1445. (in Chinese)doi:10.37188/OPE.20202807.1433 [7] 张德福, 李显凌, 芮大为, 等. 193nm投影光刻物镜光机系统关键技术研究进展[J]. 中国科学:技术科学,2017,47(6):565-581.doi:10.1360/N092017-00008ZHANG D F, LI X L, RUI D W,et al. Key technology progress of optomechanical systems in 193 nm projection objective[J].SCIENTIA SINICA Technologica, 2017, 47(6): 565-581. (in Chinese)doi:10.1360/N092017-00008 [8] 甘雨, 张方, 朱思羽, 等. 光刻机照明系统光瞳特性参数的评估算法[J]. 中国 ,2019,46(3):0304007.doi:10.3788/CJL201946.0304007GAN Y, ZHANG F, ZHU S Y,et al. Evaluation algorithm of pupil characteristic parameters in lithography illumination system[J].Chinese Journal of Lasers, 2019, 46(3): 0304007. (in Chinese)doi:10.3788/CJL201946.0304007 [9] 王思雨, 周贤建, 李青原, 等. 截止斜率可控的蓝光防护光学薄膜[J]. 中国光学,2021,14(3):544-551.doi:10.37188/CO.2020-0212WANG S Y, ZHOU X J, LI Q Y,et al. Blue-blocking optical thin films with controllable cutoff slope[J].Chinese Optics, 2021, 14(3): 544-551. (in Chinese)doi:10.37188/CO.2020-0212 [10] VILLA F, POMPA O. Emission pattern of real vapor sources in high vacuum: an overview[J].Applied Optics, 1999, 38(4): 695-703.doi:10.1364/AO.38.000695 [11] 董磊, 赵元安, 易葵, 等. 不同类型蒸发源对平面夹具薄膜均匀性的影响[J]. 强 与粒子束,2005,17(10):1518-1522.DONG L, ZHAO Y A, YI K,et al. Influence of different kinds of evaporation sources on films uniformity[J].High Power Laser and Particle Beams, 2005, 17(10): 1518-1522. (in Chinese) [12] 姚玉明, 宋宝安, 肖传富, 等. 透明红外硫系薄膜非均匀性检测及影响因素[J]. 光学 精密工程,2020,28(5):1005-1011.YAO Y M, SONG B A, XIAO CH F,et al. Optical non-uniformity test of transparent infrared chalcogenide film and influencing factors[J].Optics and Precision Engineering, 2020, 28(5): 1005-1011. (in Chinese) [13] 付秀华, 陈成, 胡章贵, 等. 278 nm全固态 系统倍频分离膜的研制[J]. 中国 ,2019,46(12):1203002.doi:10.3788/CJL201946.1203002FU X H, CHEN CH, HU ZH G,et al. Development of separation film for frequency doubling in 278 nm all-solid-state laser system[J].Chinese Journal of Lasers, 2019, 46(12): 1203002. (in Chinese)doi:10.3788/CJL201946.1203002 [14] 李大伟, 陶春先, 李笑, 等. 1064 nm与532 nm 对电子束蒸发制备的HfO2/SiO2高反膜损伤比较[J]. 强 与粒子束,2008,20(9):1457-1460.LI D W, TAO CH X, LI X,et al. Comparison of laser induced damage at 1064 nm and 532 nm to high-reflective film fabricated by electron beam evaporation[J].High Power Laser and Particle Beams, 2008, 20(9): 1457-1460. (in Chinese) [15] VILLA F, MARTÍNEZ A, REGALADO L E. Correction masks for thickness uniformity in large-area thin films[J].Applied Optics, 2000, 39(10): 1602-1610.doi:10.1364/AO.39.001602 [16] ZHANG Y CH, SONG Q ZH, SUN ZH L. Research on thin film thickness uniformity for deposition of rectangular planar sputtering target[J].Physics Procedia, 2012, 32: 903-913.doi:10.1016/j.phpro.2012.03.655 [17] HOLLAND L.Vacuum Deposition of Thin Films[M]. London: Chapman and Hall, 1970: 1600-1631. -
下载:
点击查看大图
计量
- 文章访问数:453
- HTML全文浏览量:263
- PDF下载量:134
- 被引次数:0
