基于半导体性单壁碳纳米管/富勒烯异质结的高性能透明全碳光电探测器 -

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基于半导体性单壁碳纳米管/富勒烯异质结的高性能透明全碳光电探测器

上海交通大学电子信息与电气工程学院薄膜与微细技术教育部重点实验室, 上海200240

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中图分类号:TN15
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出版历程
- 收稿日期:2022-11-24
- 修回日期:2022-12-12
- 网络出版日期:2023-04-04

High-performance transparent all-carbon photodetectors based on the semiconducting single-walled carbon nanotube/fullerene heterojunctions

doi:10.37188/CO.2022-0243

Key Laboratory of Film and Microfabrication (Ministry of Education), School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

Funds:Supported by the National Natural Science Foundation of China (No. 61974089)

More Information

Author Bio:
ZHANG Luo-xi (1997—), female, from Anyang, Henan Province, master degree, graduated fromJilin University with a bachelor degree in 2016, and obtained a master degreefrom Shanghai Jiaotong University in 2023, mainly engaged in the research of carbonnanotubes, optoelectronic devices and other fields. E-mail:luoxi-zhang@sjtu.edu.cn
SU Yan-jie (1982—), male, from Shangqiu, Henan Province, Ph.D., associate researcher/doctoral supervisor, obtained his Ph.D. from Shanghai Jiaotong University in 2012, mainly engaged in the research of nanomaterials and devices. E-mail:yanjiesu@sjtu.edu.cn

Corresponding author:yanjiesu@sjtu.edu.cn

摘要

摘要:
利用半导体性单壁碳纳米管（SWCNT）的高吸收系数、优异的光电特性和高载流子迁移率等特点，本文构筑了基于半导体SWCNT（sc-SWCNT）/富勒烯（C₆₀）异质结的透明全碳宽光谱的场效应晶体管光电探测器。该器件的大部分结构均由碳基材料组成，全碳异质结作为导电沟道材料，金属性SWCNT作为源漏电极，氧化石墨烯（GO）作为介质层，在可见光波段的透光率均高于80%。电学测试结果表明：该光电探测器表现出了较强的栅控能力，实现了从405~1064 nm的可见光-近红外宽光谱响应，在5 mW/cm²的940 nm 照射下，该器件光电响应率可以达到18.55 A/W，比探测率达到5.35×10¹¹Jones，同时，表现出了优异的循环稳定性。
- 单壁碳纳米管/
- 富勒烯/
- 全碳异质结/
- 高透明度/
- 场效应晶体管光电探测器
Abstract:
Taking advantage of the high absorption coefficient, excellent photoelectric properties, and high carrier mobility of Single-Walled Carbon NanoTubes (SWCNTs), high-performance, transparent, all-carbon Field-Effect Transistor (FET) photodetector has been constructed with a high transmittance more than 80% in the visible light band, in which semiconducting SWCNT (sc-SWCNT)/fullerene (C₆₀) heterojunctions as the channel materials, patterned metallic SWCNT film as source/drain electrodes, graphene oxide (GO) as the dielectric layer, and Indium Tin Oxide (ITO) as a transparent gate electrode. The electrical test results show that the photodetector exhibits a strong gate-tunable characteristics, and achieves a broadband spectral response from 405 to 1064 nm in the visible-near infrared spectral region. Under 940 nm illumination with a light density of 5 mW/cm², the maximum photoelectric responsivity of 18.55 A/W and a specific detectivity of 5.35×10¹¹Jones can be achieved.
- single-walled carbon nanotubes/
- Fullerene/
- all-carbon heterojunctions/
- high transparency/
- field-effect transistor photodetector

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图 1(a)器件结构示意图和(b)器件在可见光波段的透射率

Figure 1.(a) Schematic diagram of the device structure. (b) Transmittance of the device in visible band

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图 2(a)旋涂法沉积的sc-SWCNT薄膜、(b) sc-SWCNT/C₆₀异质结复合薄膜和(c)金属性SWCNT薄膜的扫描电子显微镜图

Figure 2.Scanning electron microscope images of (a) sc-SWCNT film deposited by spin coating, (b) sc-SWCNT/C₆₀heterogeneous composite film and (c) m-SWCNT film

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图 3sc-SWCNT/C₆₀薄膜的拉曼统计分析。在514 nm 辐照下(a) sc-SWCNT (黑色)和(b) sc-SWCNT/C₆₀(蓝色)的拉曼光谱

Figure 3.Raman statistical analysis of sc-SWCNT /C₆₀film. Raman spectra of (a) sc-SWCNT (black) and (b) sc-SWCNT /C₆₀(blue) under 514 nm laser irradiation

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图 4全碳器件的(a)I_ds-V_gs曲线和(b)I_ds-V_ds曲线

Figure 4.(a)I_ds-V_gscurve and (b)I_ds-V_dscurve of the all-carbon device

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图 5全碳异质结器件在不同波长（405, 514, 650, 780, 860, 940, 1064 nm）照射下的(a)I_ds-V_ds和(b)I_ds-T曲线

Figure 5.(a)I_ds-V_dscurve and (b)I_ds-Tcurve of the all-carbon device under 405, 514, 650, 780, 860, 940, 1064 nm laser irradiation

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