星间通信系统高精度分光镜的研制 -

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星间通信系统高精度分光镜的研制

doi:10.37188/CO.2023-0100

王振宇^{1, 2,},
付秀华^{1, 2,,},
林兆文^{2, 3},
黄健山³,
魏雨君^{1, 2},
吴桂青³,
潘永刚^{2, 3},
董所涛²,
王奔^{2, 3}

1.
长春理工大学光电工程学院, 吉林长春 130022
2.
长春理工大学中山研究院, 广东中山 528437
3.
中山吉联光电科技有限公司, 广东中山 528437

基金项目:2022年度中山市第二批社会公益与基础研究项目（No. 2022B2005）、长春市制造与检测装备科技创新中心长科技合（No. 20142）

详细信息

作者简介:
王振宇(1997—)，男，吉林省吉林市人，研究生在读，主要从事光学薄膜方面的研究。E-mail:wangzhenyu0913@163.com
付秀华（1963—），吉林长春人，博士，教授，博士生导师，主要从事光学薄膜、光学工艺等方面的研究。E-mail:goptics@163.com

中图分类号:O484
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出版历程
- 网络出版日期:2023-09-28

Development of high-precision beam splitter for inter-satellite communication system

WANG Zhen-yu^{1, 2,},
FU Xiu-hua^{1, 2,,},
LIN Zhao-wen^{2, 3},
HUANG Jian-shan³,
WEI Yu-jun^{1, 2},
WU Gui-qing³,
PAN Yong-gang^{2, 3},
DONG Suo-tao²,
WANG Ben^{2, 3}

1.
School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
2.
Zhongshan Institute of Changchun University of Science and Technology, Zhongshan 528437, China
3.
Zhongshan Jilion Optoelectronics Technology Co., Ltd., Zhongshan 528437, China

Funds:Supported by the second batch of social welfare and basic research projects in Zhongshan city in 2022 (No. 2022B2005)、Changchun Laser Manufacturing and Testing Equipment Science and Technology Innovation Center Changhe (No. 2014219)

More Information

Corresponding author:goptics@126.com

摘要

摘要:
随着星间通信系统的迅速发展，数据传输的精度要求不断提高。分光镜作为系统的核心元件，其光谱特性和面形精度直接影响整个系统的传输精度。本文基于薄膜干涉理论，选取Ta₂O₅与SiO₂作为高低折射率膜层材料进行膜系设计，采用电子束蒸发的方式在石英基板上制备高精度分光镜。同时根据膜层应力补偿原理建立面形修正模型，修正分光镜面形。经光谱分析仪检测，分光镜在入射角度为21.5°～23.5°范围内，1563 nm透过率大于98%，1540 nm反射率大于99%。经干涉仪检测，分光镜反射面形精度RMS由λ/10修正至λ/90（λ=632.8 nm），透过面形精度RMS为λ/90。
- 星间通信/
- 分光镜/
- 应力补偿/
- 面形精度
Abstract:
With the rapid development of inter-satellite communication systems, the requirements for data transmission accuracy are constantly increasing. As the core component, the spectral characteristics and surface shape accuracy of the beam splitter directly affect the transmission accuracy of the whole system. In this paper, based on the interference theory of thin film, Ta₂O₅and SiO₂were selected as the high and low refractive index film materials for the design of the film system, and electron beam evaporation was used to prepare a high-precision beam splitter on a quartz substrate. At the same time, a surface shape correction model was established based on the principle of film stress compensation to control the surface shape. Through the detection of a spectral analyzer, the transmittance of beam splitter is greater than 98% at 1563 nm and the reflectance is greater than 99% at 1540 nm within the incidence range of 21.5° to 23.5°. The surface shape was measured by laser interferometer, the reflective surface shape accuracy RMS is corrected from λ/10 to λ/90 (λ=632.8 nm), and the transmissive optical surface shape accuracy RMS is λ/90.
- inter-satellite communication/
- beam splitter/
- stress compensation/
- surface accuracy

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图 1分光膜设计曲线

Figure 1.Spectra of the beam splitter

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图 2分光镜设计曲线

Figure 2.Spectra of the beam splitter

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图 3薄膜应力（a）张应力（b）压应力

Figure 3.Thin film stress (a) Tensile stress (b) Compressive stress

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图 4基底的反射波前示意图

Figure 4.Schematic diagram of reflection wavefront of the substrate

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图 5基底的矢高与曲率半径示意图

Figure 5.Schematic diagram of the Power and radius curvature of the substrate

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图 6分光膜的透过曲线

Figure 6.Transmittance curve of beam splitter

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图 7四片样品能量谱密度图

Figure 7.Schematic diagram of power spectral density of 4 samples

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图 8四片样品的透过率曲线

Figure 8.Schematic diagram of transmittance curve of 4 samples

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图 9样品Power改变量随沉积SiO₂厚度变化的拟合曲线

Figure 9.Fitting curve of the change in sample Power with the thickness of deposited SiO₂

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图 10分光镜能量谱密度图

Figure 10.Power spectrum density of beam splitter

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图 11分光镜的透过率曲线

Figure 11.Transmittance curve of beam splitter

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表 1材料沉积工艺参数

Table 1.Material deposition process parameters

材料	沉积速率/(nm·s⁻¹)	起始真空度/(×10⁻⁴Pa)	沉积温度/(°C)
Ta₂O₅	0.4	7	220
SiO₂	0.6	7	220

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表 2不同离子源工艺参数沉积的SiO₂薄膜对样品的Power改变量

Table 2.Change in Power of samples by SiO₂films deposited by different ion source process parameters

编号	电压/V	束流/mA	面形图		∆power（λ）
编号	电压/V	束流/mA	基底	沉积后	∆power（λ）
1	1 100	950			0.148 5
2	1 000	920			0.160 2
3	950	900			0.182 1

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表 3离子源工艺参数

Table 3.Process parameters of ion source

材料	电压/ V	束流/ mA	气体 O₂/ Sccm	气体 Ar/ Sccm
Ta₂O₅	1 100	950	50	8
SiO₂（直控）	1 100	950	50	8
SiO₂（背反）	950	900	50	8
SiO₂（晶控）	950	900	50	8

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表 4样品沉积分光膜的面形结果

Table 4.Surface shape results of sample deposited beam splitter

类别	编号	1#	2#	3#	4#
基底	面形图
	PV（λ）	0.074 6	0.076 1	0.077 4	0.072 3
	RMS（λ）	0.008 7	0.009 2	0.009 7	0.008 3
	Power（λ）	0.007 3	0.008 1	0.008 4	0.007 8
沉积后	面形
	PV（λ）	0.516 7	0.528 9	0.531 6	0.515 3
	RMS（λ）	0.111 8	0.111 6	0.111 4	0.111 9
	Power（λ）	−0.385 9	−0.383 9	−0.382 7	−0.3854

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表 5样品Power改变量与A值随沉积SiO₂膜层厚度变化的数据

Table 5.Data on the variation of sample Power change andA-value with the thickness of deposited SiO₂film

SiO₂厚度（nm）	∆Power（λ）	A(∆λ/100 nmSiO₂)
3 500	0.155 1	0.004 43
5 000	0.228 0	0.004 56
6 500	0.308 8	0.004 75
8 000	0.394 4	0.004 93
9 500	0.488 3	0.005 14

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表 6修正前后样品的面形参数

Table 6.Surface parameters of samples before and after correction

类别	面形图	PV（λ）	RMS（λ）	Power（λ）
修正前		0.531 6	0.111 4	−0.382 7
修正后		0.121 9	0.016 2	−0.042 9

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表 7修正前后的面形参数与面形图

Table 7.Surface parameters and surface profile before and after correction

类别	面形图	PV（λ）	RMS（λ）	Power（λ）
基底		0.0723	0.0083	0.0078
修正前（反射面形）		0.5153	0.1119	−0.3854
修正后（反射面形）		0.0888	0.0107	−0.0153
修正前（透过面形）		0.0694	0.0097	0.0136
修正后（透过面形）		0.0783	0.0103	0.0141

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