Design of all-optical logic gate based on two-dimensional photonic crystal
doi:10.37188/CO.EN-2023-0014
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摘要:
在二维光子晶体中嵌入了线缺陷，利用线性干涉效应和波导耦合，设计了一种基于二维光子晶体的同或门和与非门结构。主要采用平面波展开法对该二维光子晶体的能带结构进行了分析，采用时域有限时域差分法和线性干涉效应，在Rsoft平台对所设计的同或门和与非门进行稳定电场图和归一化功率仿真。仿真结果标明，设计的同或门对比度高达29.5 dB，响应时间为0.073 ps，数据传输速率为13.7 Tbit/s；设计的与非门对比度高达24.15 dB，响应时间为0.08 ps，数据传输速率为12.5 Tbit/s。这些参数表明所设计的结构对比度高、响应时间短和数据传输速率快。
Abstract:In this paper, an XNOR gate and NAND gate structure, utilizing a two-dimensional photonic crystal with a line defect and linear interference effect alongside waveguide coupling, has been designed. The band structure of the photonic crystal has been analyzed using the plane wave expansion method. The finite-difference time-domain method and the linear interference effect are used to simulate the stable electric field diagram and the normalized power of the XNOR gate and NAND gates on the Rsoft platform. The simulation results demonstrate that the XNOR gate that was designed possessed a contrast of 29.5 dB, a response time of 0.073 ps, and a data transmission rate of 13.7 Tbit/s. On the other hand, the designed NAND gate has a contrast of up to 24.15 dB, a response time of 0.08 ps, and a data transmission rate of 12.5 Tbit/s. With these parameters, the designed structure showcases a high contrast, short response time, and fast data transmission rate.
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Figure 3.The steady-state electric field diagrams when the input is logic '00', '01', '10' and '11' respectively. (a) '00'; (b) '01'; (c) '10'; (d) '11'
Figure 4.The normalized power output curves when the input is logic '00', '01', '10' and '11' respectively. (a) logic '00'; (b) logic '01'; (c) logic '10'; (d) logic '11'
Figure 6.The electric field diagram and normalized power curve remain stable when the input logic is '00', '10' and '11' respectively. (a) '00' electric field diagram (b) '10' electric field diagram (c) '00' electric field diagram (d) '00' normalized curve (e) '00' normalized curve (f) '00' normalized curve
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