Numerical analysis of HgCdTe crystal damaged by high repetition frequency CO2laser
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摘要:针对CO2 作用下HgCdTe晶体的损伤问题进行了数值分析。首先,建立了高重频CO2 损伤Hg0.784Cd0.216Te晶体的三维热传导物理模型;然后,利用有限元方法计算了单脉冲和高重频CO2 作用下,Hg0.784Cd0.216Te晶体的损伤阈值;最后,分析了 重频以及辐照时间对晶体损伤阈值的影响。研究结果表明:单脉冲 辐照下,晶体的损伤阈值为64.5 J/cm2;高重频(f1 kHz) 辐照下, 重频的改变对晶体损伤阈值的影响较小,损伤阈值应由平均功率密度表征,且与辐照时间密切相关;辐照时间的增加,可以有效地减小晶体的损伤阈值,当 辐照功率密度1.95 kW/cm2时,不会发生晶体损伤。研究结果对高重频CO2 在 加工以及 防护的应用方面具有指导意义。Abstract:To obtain thermal damage characteristics of the HgCdTe crystal irradiated by a CO2 laser, the theoretical model of Hg0.784Cd0.216Te crystal damaged by the high repetition frequency CO2 laser was developed, and then the damage thresholds of Hg0.784Cd0.216Te crystal irradiated by a single pulse laser and a high repetition frequency laser were calculated based on the finite element method. Finally, the effect of irradiation time and laser repetition frequency on the damage thresholds was analyzed. The results show that the damage threshold of the crystal radiated by a single pulse laser is 64.5 J/cm2. In the high repetition frequency(f1 kHz) CO2 laser irradiation, the damage threshold of the crystal mainly depends on the laser average power density and irradiation time, and is independent of the laser repetition frequency. With the increase of irradiation time, the damage threshold can effectively be reduced. When the laser average power density is less than 1.95 kW/cm2, the crystal damage will not occur. The conclusions have a reference value for laser processing and protection.
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Key words:
- laser damage/
- damage threshold/
- high repetition frequency/
- HgCdTe crystal
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[1] 张来明,徐东东,亓凤杰,等. CO2 辐照氧化钒热像仪的实验[J]. 光学 精密工程,2011,19(2):348-353. ZHANG L M,XU D D,QI F J,et al.. Experimental research on VO2thermal imager irradiated by CO2laser[J].Opt. Precision Eng.,2011,19(2):348-353.(in Chinese) [2] 陶萌萌,杨鹏翎,刘卫平,等. 高能 辐照下光纤布拉格光栅响应特性[J]. 中国光学,2012,5(5):544-549. TAO M M,YANG P L,LIU W P,et al.. Response characteristics of fiber Bragg gratings irradiated by high energy lasers[J].Chinese Optics,2011,19 (2):348-353.(in Chinese) [3] KUMBHAKAR P.半导体量子点材料在Nd: YAG 辐照下的非线性光学效应[J]. 光学 精密工程,2011,19(2):228-236. KUMBHAKAR P. Observation of nonlinear optical effects in some semiconductor quantum dot materials using Nd: YAG laser radiation[J].Opt. Precision Eng.,2011,19(2):228-236.(in Chinese) [4] 杨贵龙,邵春雷,李殿军,等. 室温条件下脉冲CO 辐射特性[J]. 发光学报,2010,31(5):682-685. YANG G L,SHAO CH L,LI D J,et al.. Properties of pulsed CO laser radiation at room temperature[J].Chinese J. Luminescence,2010,31(5):682-685.(in Chinese) [5] 邵明振,邵春雷,卢启鹏,等. 高功率TEA CO2 器主机结构优化设计[J]. 发光学报,2013,34(3):388-393. SHAO M Zh,SHAO CH L,LU Q P,et al.. Design on mainframe of high power TEA CO2laser and optimization[J].Chinese J. Luminescence,2013,34(3):388-393.(in Chinese) [6] 史晶晶,秦莉,宁永强,等. 大功率垂直腔面发射 器的相干性测量与分析[J]. 发光学报,2011,32(8):834-838. SHI J J,QIN L,NING Y Q,et al.. Coherent measurement and analysis of vertical-cavity surface-emitting laser[J].Chinese J. Luminescence,2011,32(8):834-838.(in Chinese) [7] ROGALSKI A. HgCdTe infrared detector material: history, status and outlook[J].Rep. Prog. Phys.,2005,68:2267-2336. [8] 蔡虎,程祖海,朱海红,等. 在TEA-CO2强 脉冲作用下Hg0.8Cd0.2Te晶片表面的组分变化[J]. 红外与毫米波学报,2006,25(3):165-169. CAI H,CHENG Z H,ZHU H H,et al.. Surface component change of Hg0.8Cd0.2Te induced by high power pulsed TEA-CO2laser[J].J. Infrared. Millim. Waves,2006,25(3):165-169.(in Chinese) [9] BERDING M A,VAN S M,SHER A. Hg0.8Cd0.2Te native defects densities and dopant properties[J].J. Electron. Mater.,1993,22:1005-1010. [10] 王思雯,郭立红,赵帅,等. 高功率CO2 对远场HgCdTe探测器的干扰实验[J]. 光学 精密工程,2010,18(4):798-804. WANG S W,GUO L H,ZHAO SH,et al.. Experiments of high-power CO2laser disturbance to far-field HgCdTe detectors[J].Opt. Precision Eng.,2010,18(4):798-804.(in Chinese) [11] ZHAO J H,LI X Y,LIU H,et al.. Damage threshold of HgCdTe induced by continuous-wave CO2laser[J].Appl. Phys. Lett.,1999,77(8):1081-1083. [12] 李修乾,程湘爱,王睿,等. 波段外CW CO2 辐照HgCdTe探测器热效应研究[J]. 中国 , 2003, 30(12):1070-1074. LI X Q,CHENG X A,WANG R,et al.. Investigation of thermal effect of HgCdTe detector with irradiation by off-band CW CO2laser[J].Chinese J. Lasers,2003,30(12):1070-1074.(in Chinese) [13] BARTOLI F,ESTEROWITZ L,KRUER M,et al.. Thermal modelling of laser damage in 8~14 μm HgCdTe photoconductive and PbSnTe photovoltaic detectors[J].J. Appl. Physics,1975,46(10):4519-4529. [14] CHEN CH S,LIU A H,SUN G,et al.. Analysis of laser damage threshold and morphological changes at the surface of a HgCdTe crystal[J].J. Opt. A:Pure Appl. Opt.,2006,8:88-92. [15] 戚树明,陈传松,周新玲,等. 准分子 辐照HgCdTe半导体材料的损伤机理研究[J]. 量子光学学报,2009,15(1):76-83. QI S M,CHEN CH S,ZHOU X L,et al.. Study of damage mechanism on HgCdTe semiconductor material by excimer laser irradiation[J].Acta Sinica Quantum Optica,2009,15(1):76183.(in Chinese) [16] JEVTIC M M,SCEPANOVIC M J. Melting and solidification in laser-irradiated HgCdTe[J].Appl. Phys. A,1991,53(4):332-338. [17] CHU J H,MI ZH Y,TANG ZH Y. Band to band optical absorption in narrow gap Hg1-xCdxTe semiconductors[J].J. Appl. Phys.,1992,71(8):3955-3961. [18] BARTOLI F,ESTEROWITZ L,KRUER M,et al.. Irreversible laser damage in ir detector materials[J].Appl. Optics,1977,16(11):2934-2937.
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