Zn2GeO4nanowires prepared by chemical vapor deposition and its luminescence properties
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摘要:利用化学气相沉积法(CVD),气-液-固(VLS)生长法则在表面溅有金属Au催化剂层的1 cm1 cm的Si片上制备三元Zn2GeO4纳米线。X射线衍射仪(XRD)测试结果表明,锌源与锗源质量比为8:1时可成功制备出Zn2GeO4纳米结构;扫描电子显微镜(SEM)测试结果表明,Zn2GeO4纳米线直径为100 nm,长度为10~11 m;光致发光(PL)测试结果表明,Zn2GeO4纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。Abstract:Ternary Zn2GeO4 nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm1 cm silicon wafer sputtered by metal Au catalyst. Zn2GeO4 structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8:1wt% as the X-ray diffraction(XRD) shown. The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 m. The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm, respectively. Finally, the growth mechanism of the Zn2GeO4 nanowires was analyzed.
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