Soft X-ray and extreme ultraviolet photon-counting imaging detector with curved surface micro-channel plate and induced charge position-sensitive anode
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摘要:本项目对我国空间探测的极紫外(EUV)波段大视场相机所需求的球面光子计数成像探测器的关键技术进行了研究。首先,建立了光阴极材料次级电子产出模型,利用该模型计算了软X射线-EUV波段常用的光电阴极材料—碱卤化物的次级电子产出,分析了微通道板(MCP)的次级电子产出。建立了测量MCP量子探测效率的装置,并推导出MCP量子探测效率的计算公式,测量了MCP在软X射线-EUV波段的量子效率以及MCP量子效率随掠入射角的变化。其次,建立了球面实芯微通道板的制备装置,利用高温热成型方法制备出曲率半径为150 mm球面MCP,利用光刻技术制备出有效直径为48 mm的楔条形感应电荷位置灵敏阳极,在此基础上集成了一套使用球面MCP和感应电荷位置灵敏阳极的两维光子计数成像探测器。再次,研制出包括快速前端模拟电路与后续数字电路的成像读出电路,编制了能矫正图像畸变的图像实时采集和处理软件。最后,建立了MCP探测器空间分辨率、图像线性的检测装置,对研制出的探测器性能进行了检测,检测结果表明:探测器的各项技术指标完全满足要求。Abstract:The research on key techniques of wide field extreme ultraviolet(EUV) spherical micro-channel plate(MCP) photon-counting imaging detector which will be used in space probe in China have been done. Firstly, the secondary electron yield model of photocathode material was built, and the secondary yield of alkali halide and MCP in soft X-ray and EUV band were calculated using the model. The measurement equipment of MCP's quantum detection efficiency also was set up. The calculated fomula of MCP's quantum efficiency was introduced, and MCP's quantum efficiency vs. wavelength and incidence angle in soft X-ray and EUV region were measured. secondly, the instrument of solid core spherical MCP fabrication was established, a set of spherical MCP with 150 mm radius were made using the instrument. The 48 mm induced charge wedge and strip anode in effective diameter was made by the use of traditional UV lithography, and the photon-counting imaging detector was integrated based on the anode and spherical MCP stack in Z configuration. Thirdly, the position readout electronics including analog frent-end and digital processing circuit and the software with image distortion rectification and real-time collection were developed. Finally, the measurement instrument of spherical MCP detector's spatial resolution and image linearity was built, and the specifications of the detector were measured using the instrument, showing that all technical specificaions of the detector satisfy the design requirements.
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图 2球面MCP光子计数成像探测器照片
Figure 2.Photo of the spherical MCP photon counting imaging detector
图 3计数率为20 kcounts/s球面MCP光子计数成像探测器美国US1951空间分辨率板图像
Figure 3.Images of US 1951 spatial resolution plate for spherical MCP photon counting imaging detector with counting rates of 20k counting/s
图 4计数率为50 kcounts/s球面MCP光子计数成像探测器美国US1951空间分辨率板图像
Figure 4.Image of US 1951 spatial resolution plate for the spherical MCP photon counting imaging detector with counting rates of 50k counting/s
图 5计数率为100 kcounts/s球面MCP光子计数成像探测器美国US1951空间分辨率板图像
Figure 5.Image of US 1951 spatial resolution plate for the spherical MCP photon counting imaging detector with counting rates of 100k counting/s
图 6球面MCP光子计数成像探测器暗计数图像
Figure 6.Dark counting image for the spherical MCP photon counting imaging detector
图 7球面MCP光子计数成像探测器针孔阵列图像
Figure 7.Pinhole array image for the spherical MCP photon counting imaging detector
图 10Henke实验测得的初级电子数与总电子数之比。Yp代表初级电子数，即光电子和俄歇电子之和；YT是总电子数，即光电子、俄歇电子和次级电子三者之和
Figure 10.Ratio of the primary electrons and the total electrons in the Henke's experimental.Ypis primary electrons which is the sum of the photoelectrons and the Auger electrons.Ytis the total electrons which is the sum of the photoelectrons,Auger electrons and secondary electrons
图 12正入射时次级电子产出随波长的变化
Figure 12.Relationship between the secondary electrons with the wavelength when it is normal incidence
图 13次级电子产出随掠入射角的变化
Figure 13.Relationship between the secondary electrons with the grazing angle
图 14碱卤化物次级电子产出的光谱响应. (a)LiF、LiCl、LiBr和LiI； (b)NaF、NaCl、NaBr和NaI； (c)KF、KCl、KBr和KI； (d)RbF、RbCl、RbBr和RbI； (e)CsF、CsCl、CsBr和CsI
Figure 14.Spectral response for the output of secondary electrons from anlkalihalide. (a)LiF、LiCl、LiBr and LiI； (b)NaF、NaCl、NaBr and NaI； (c)KF、KCl、KBr and KI； (d)RbF、RbCl、RbBr and RbI； (e)CsF、CsCl、CsBr and CsI
图 20弧形底座、支架、滑块连同转盘的装配图
Figure 20.Assembly drawing of the curve base,frame,slide along with the turntable
图 23AXUV 100 Si光电二极管的典型量子效率
Figure 23.Typical quantum efficiency of the AXUV100 Si photodiode
图 24AXUV100光电二极管在软X射线-EUV波段的典型量子效率
Figure 24.Typical quantum efficiency of the AXUV100 Si photodiode working in the wavelength of the soft X-ray and UVE
图 26传递标准探测器和待测探测器测得的软X射线-EUV光谱
Figure 26.Spectroscopy of the soft X-ray and EUV measured by transfer standard detector and the texting detector
图 28镀CsI MCP和“裸露”MCP的量子效率
Figure 28.Quantum efficiency of the bare MCP and the MCP coating CsI
图 29MCP探测器测得的相对光强随掠入射角的变化
Figure 29.Relationship between the relative intensity that the MCP detector measured and the grazing angle
图 30Ni-Cr电极和MCP玻璃的次级电子产出随材料厚度的变化曲线
Figure 30.Relationship between the material thickness and the secondary electrons output from the Ni-Cr electrode and the MCP glass
图 31Ni-Cr和MCP玻璃的次极电子产出随掠入射角的变化曲线
Figure 31.Relationship between the grazing incidence angle and the secondary electrons output from the Ni-Cr electrode and the MCP glass
图 32Ni-Cr和MCP玻璃的次极电子产出随波长的变化曲线
Figure 32.Relationship between the wavelength and the secondary electrons output from the Ni-Cr electrode and the MCP glass
图 33MCP量子效率的理论计算与实验结果对比图
Figure 33.Results of theoretical calculations and the experiments on MCP quantum efficiency
图 34MCP量子效率随掠入射角的变化，理论分析与实验结果对比图
Figure 34.Theoretical calculations and the experimental results of MCP quantum efficiency changing with the grazing incidence angle
图 36曲率半径为150 mm面实芯MCP照片
Figure 36.Photo of the solid core MCP with curvature radius of 150 mm
图 37曲率半径为150 mm球面MCP照片
Figure 37.Photo of a spherical MCP with curvature radius of 150 mm
图 39制备在95陶瓷基片另一表面的Ge电阻膜
Figure 39.Ge resistance film fabricated on another surface of 95 ceramic substrate
图 40球面MCP感应电荷WSZ阳极位置读数电路原理示意图
Figure 40.Schematic diagram of spherical MCP induced charge WSZ anode position readout circuit
图 43不同电压下MCP堆脉冲高度分布
Figure 43.Pulse height distribution for the MCP heap under different voltage
图 49真空室内探测器和分辨率板示意图
Figure 49.Schematic diagram of detector and resolution plate in the vacuum chamber
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