水平腔面发射半导体器研究进展 -

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水平腔面发射半导体器研究进展

doi:10.3788/CO.20171002.0194

长春理工大学高功率半导体国家重点实验室, 吉林长春 130022

基金项目:

吉林省科技计划重点项目20140204028GX

吉林省科技计划重点项目20150204068GX

详细信息

作者简介:
海一娜 (1990-), 女, 内蒙通辽人, 博士研究生, 主要从事光电子技术与应用方面的研究。E-mail:haiyn90@163.com

通讯作者:
邹永刚 (1982-), 男, 吉林长春人, 博士, 副研究员, 硕士生导师, 2004年、2009年于吉林大学分别获得学士、博士学位, 主要从事光电子技术与应用、光电子器件等方面研究。E-mail:zouyg@cust.edu.cn

中图分类号:TN248.4
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- 被引次数:0
出版历程
- 收稿日期:2016-10-20
- 修回日期:2016-11-29
- 刊出日期:2017-04-01

Research progress of horizontal cavity surface emitting semiconductor lasers

State Key laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

Funds:

Key Project of S & T Development Plan of Jilin Province of China20140204028GX

Key Project of S & T Development Plan of Jilin Province of China20150204068GX

摘要

摘要:近年来，水平腔面发射半导体器具有高功率、高光束质量及易封装集成等优良性能，已成为器领域的研究热点。本文详细阐述了几种水平腔面发射半导体器的结构设计、工作原理以及输出特性，并对该器国内外最新研究进展与发展现状进行了总结和论述。在此基础上，对该器的研究方向和发展趋势进行了分析与展望。目前，水平腔面发射半导体器的输出功率可达瓦级，美国Alfalight公司引入曲线形光栅的单一发射器输出功率可达73 W。随着应用领域的不断拓展，中远红外波段水平腔面发射器将成为未来的研究焦点。
- 面发射/
- 转向镜/
- 二阶光栅/
- 光子晶体/
- 半导体器
Abstract:In recent years, horizontal cavity surface emitting semiconductor lasers have become a hot research topic in the field of lasers due to its excellent properties such as high power, high beam quality, easy packaging, integration and so on. In this paper, we describe several types of horizontal cavity surface emitting semiconductor lasers and their working principle, structure design and features. Then, we summarize and review the present research and development of the proposed lasers at home and abroad, and on this basis, aiming at the research work for horizontal cavity surface-emitting semiconductor lasers and development trends, a further analysis and outlook are given. Currently, the output power of the horizontal cavity surface emitting semiconductor lasers has achieved watts level, and the output power of single transmitter producted by Alfalight company can reach up to 73 W with curved grating. With the expansion of application fields, far infrared band horizontal cavity surface emitting lasers will become focus in the future.
- surface emitting/
- steering mirror/
- second order grating/
- photonic crystal/
- semiconductor lasers

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图 1水平腔面发射器结构示意图

Figure 1.Structure diagram of horizontal cavity surface emitting lasers

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图 2垂直发射器芯片结构示意图^[23]

Figure 2.Structure diagram of vertical emitting laser chip^[23]

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图 3水平腔面发射器横截面原理图^[24]

Figure 3.Schematic cross-sectional view of horizontal cavity surface emitting lasers (HCSEL)^[24]

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图 4二维面发射器的立体结构图

插图：面发射器截面图^[26]

Figure 4.3-D schematic view of 2-D surface-emitting laser

Inset: Cross-sectional view of surface-emitting laser^[26]

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图 5 器结构 (光栅周期Λ和占空比σ)^[28]

Figure 5.Laser structure (grating periodicityΛand duty cycleσ)^[28]

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图 6衬底发射量子级联器结构示意图^[29]

Figure 6.Schematic representation of the substrate-emitting quantum cascade laser^[29]

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图 7非周期光栅结构面发射量子级联器示意图^[30]

Figure 7.Schematic diagram of surface-emitting quantum cascade lasers using biperiodic top metal grating^[30]

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图 8面发射掩埋异质结构DFB/DBR量子级联器结构示意图^[31]

Figure 8.Schematic diagram of surface-emitting buried-heterostructure DFB/DBR quantum cascade lasers^[31]

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图 9三维器件结构示意图^[32]

Figure 9.Schematic three-dimensional device representation^[32]

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图 10 器结构横截面结构图^[33]

Figure 10.Schematic cross section of laser structure^[33]

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图 11面发射量子级联器光栅与脊形波导横截面及局部光栅的电子显微俯瞰示意图^[37]

Figure 11.Schematic cross section of the grating region and the ridge-waveguide of surface emitting quantum cascade lasers and scanning electron microscopy top viewpoint of partial grating^[37]

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图 12表面金属光栅分布反馈量子级联器示意图^[38]

Figure 12.Schematic diagram of the surface metal grating distributed feedback quantum cascade lasers^[38]

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图 13面发射量子级联器示横截面结构图^[39]

Figure 13.Schematic cross section of the surface-emitting quantum cascade lasers^[39]

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图 14宽条形衬底出光分布反馈量子级联器示意图^[42]

Figure 14.Schematic of broad area substrate-emitting distributed feedback quantum cascade lasers^[42]

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图 15光栅结构扫描电子显微镜图像^[43]

Figure 15.SEM image of the grating structure^[43]

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图 16曲线形光栅面发射分布反馈器 (带有中心泵浦区域、光栅和吸收区域) 俯视图^[44-45]

Figure 16.An underside view of a curved-grating surface emitting distributed feedback laser showing central pumped-stripe, grating and absorber regions^[44-45]

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图 17圆形光栅器常见结构^[46]

Figure 17.Generic structure of the circular grating lasers^[46]

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图 18二阶同轴圆形金属光栅太赫面发射分布反馈量子级联器示意图^[47]

Figure 18.Schematic diagram of THz surface emitting distributed feedback quantum cascade lasers with a 2^nd-order concentric circular metal grating^[47]

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图 19圆形量子级联器异质结和波导结构示意图

插图是完整的圆形器形貌^[49]

Figure 19.Schematic illustration of the heterostructure and the waveguide of a ring quantum cascade lasers. The inset shows a sketch of the complete ring laser^[49]

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图 20器件横截面图^[61]

Figure 20.Schematic cross section of a device^[61]

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图 21光子晶体面发射器结构示意图

左下方说明的是底部侧模圆形p电极直径^[62]

Figure 21.Schematic structure of a PCSEL device. Lower left panel illustrates bottom side view of circular p-electrode with diameterL^[62]

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表 13种结构面发射器性能

Table 1.Properties of three kinds surface emitting laser structures

引入结构	波段范围/nm	出光光束质量	加工工艺	出光功率
转向镜^[23-24]	979.65	半高全宽0.9 nm	较复杂	W级
	1 490	半高全宽0.6 nm	较复杂	mW级
二阶光栅^[44]	9XX~1 5XX	椭圆形光斑发散角较小	较简易	W级
光子晶体^[22,61-62]	1 4XX~8 0XX	圆形光斑发散角较小	较复杂	mW级

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