锥形半导体器研究进展 -

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锥形半导体器研究进展

doi:10.3788/CO.20191201.0048

长春理工大学高功率半导体国家重点实验室, 吉林长春 130022

基金项目:

吉林省科技发展计划项目20180519018JH

吉林省科技发展计划项目20190302052GX

吉林省教育厅"十三五"科学技术项目JJKH20190543KJ

长春理工大学科技创新基金XJJLG-2016-07

详细信息

作者简介:
孙胜明(1991-), 男, 山东聊城人, 硕士研究生, 主要从事光电子技术与应用方面的研究。E-mail:sunshengming23@163.com
范杰(1982—)，男，吉林延边人，博士，助理研究员，2007年于吉林大学获得硕士学位，2013年于电子科技大学获得博士学位，主要从事光电子技术与应用方面的研究。E-mail:fanjie@cust.edu.cn

中图分类号:TN248
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- 被引次数:0
出版历程
- 收稿日期:2018-01-29
- 修回日期:2018-03-03
- 刊出日期:2019-02-01

Progress of tapered semiconductor diode lasers

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

Funds:

Jilin Science and Technology Development Plan20180519018JH

Jilin Science and Technology Development Plan20190302052GX

Jilin Education Department "135" Science and TechnologyJJKH20190543KJ

the Innovation Science Foundation of Changchun University of Science and TechnologyXJJLG-2016-07

More Information

Corresponding author:FAN Jie, E-mail:fanjie@cust.edu.cn

摘要

摘要:锥形半导体器具有高功率、高光束质量等特点，因此受到广泛关注并成为研究热点。从3种结构(传统结构、分布式布拉格反射(DBR)结构、侧向光栅条纹结构)的锥形半导体器出发，对国内外近十年具有代表性研究成果进行综述，介绍其理论研究和实验进展，并对锥形半导体器的未来发展进行展望。
- 锥形半导体器/
- 传统结构/
- DBR结构/
- 侧向光栅条纹结构
Abstract:Tapered semiconductor lasers are characterized by high power and high beam quality. As a result, they have attracted much attention and have become a widely researched topic. This review focuses on the three main structures of tapered semiconductor diode lasers:the traditional structure, the distributed Bragg reflector(DBR) structure and the lateral grating structure. This paper summarizes the results of domestical and international representative research from the past ten years, introduces its theoretical research and experimental progress, and predicts the future development of tapered semiconductor lasers.
- tapered diode laser/
- traditional structure/
- DBR structure/
- lateral grating structure

HTML全文

图 1锥形半导体器样貌图^[10]

Figure 1.Schematic of the tapered lasers^[10]

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图 2器件的阈值电流密度随温度的变化^[12]

Figure 2.Plot of the threshold current density versus temperature^[12]

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图 3980 nm锥形器在不同输出功率时和不同驱动方式时的光束质量因子^[13]

Figure 3.Dependence of the beam propagation ratioM²on the output power for common separate contacting^[13]

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图 4不同外延设计的输出功率和光束质量因子M²的关系^[18]

Figure 4.Beam propagation factorM²with the outputpower for different epitaxial designs and experimental value for the symmetric structure^[18]

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图 5PCB层结构的锥形半导体器结构示意图^[21]

Figure 5.Schematic of the tapered lasers based on longitudinal PBC structure^[21]

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图 6折射率分布和横向模式强度分布^[21]

Figure 6.Refractive index distribution and calculated mode profiles^[21]

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图 74种不同锥角大小结构的P-I-V曲线图^[23]

Figure 7.Data for four different waveguide structures of the devices in a CW mode at room temperature^[23]

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图 80°、3°、5°、8°Thz锥形半导体器电镜图^[24]

Figure 8.SEM image of the tapered THz QCL with tapered angles equal to 0°, 3°, 5° and 8°^[24]

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图 93A锥形区电流条件下，不同主振荡器电流条件(0、150、300 mA)的传统锥形器和DBR锥形器的近场强度、远场强度分布^[26]

Figure 9.Near-and far-fields intensity for different RW(0、150、300 mA) currents at a taper current of 3 A^[26]

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图 101 060 nm锥形半导体器结构示意图^[28]

Figure 10.Cross-sectional schematic of the 1 060 nm DBR tapered laser^[28]

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图 111 030 nm锥形半导体器结构示图^[30]

Figure 11.Lateral layout of the presented 1 030 nm DBR tapered diode laser^[30]

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图 123种不同DBR锥形半导体器设计^[32]

Figure 12.Illustrations of the lateral layouts for DBR tapered diode lasers^[32]

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图 13DBR光栅加热电极^[33]

Figure 13.Heater contact pads for DBR grating^[33]

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图 14913 nm双锥形半导体器结构示意图^[35]

Figure 14.Schematical picture of the device. The scanning electron microscope map(inset) shows the ridge waveguide and the HOSGs on both sides of it^[35]

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图 15主振荡器侧向条纹锥形半导体器结构示意图^[36]

Figure 15.Schematic diagram of a tapered THz QCL with lateral gratings^[36]

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图 16带有侧向Cr金属光栅的DFB锥形半导体器结构示意图^[37]

Figure 16.Schematic diagram of laterally tapered ridge waveguide InGaAsP-InGaAsP MQW DFB lasers with Cr surface gratings^[37]

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图 1725 ℃和55 ℃条件下，器件光谱图^[38]

Figure 17.Spectral characteristic of the device at 25 ℃ and 55 ℃ heatsink temperature^[38]

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表 13种锥形半导体器性能

Table 1.Properties of three kinds tapered laser diode structures

器件结构	出光功率	M²因子	最大亮度	加工工艺
传统^[14-16]	W级	较大, 较不稳定	460 MW·cm^-2sr^-1	较简单
DBR^[27-28]	10W级	较小, 稳定	700 MW·cm^-2sr^-	较复杂
侧向光栅条纹^[23]	mW级	较小	偏小	较简单

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