等离子体13.5 nm极紫外光刻光源进展 -

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等离子体13.5 nm极紫外光刻光源进展

doi:10.3788/CO.20201301.0028

宗楠^{1, 2, †,,},
胡蔚敏^{1, 3, †,},
王志敏¹,
王小军¹,
张申金²,
薄勇¹,
彭钦军^{1, 2,,},
许祖彦^{1, 2}

1.
中国科学院固体重点实验室, 中国科学院理化技术研究所, 北京 100190
2.
中国科学院功能晶体与技术重点实验室, 中国科学院理化技术研究所, 北京 100190
3.
中国科学院大学, 北京 100049

基金项目:

国家重点研发项目No.2016YFB0402103

中科院关键技术团队项目No.GJJSTD20180004

国家重大科研装备研制项目No.ZDYZ2012-2

国家重大科学仪器设备开发专项No.2012YQ120048

国家自然科学重点基金项目No.61535013

中科院理化所所长基金No.Y8A9021H11

详细信息

作者简介:
宗楠(1982—)，女，辽宁阜新人，博士， 2010年于中国科学院物理研究所获得光学博士学位，现为中国科学院理化技术研究所副研究员，硕士生导师，主要从事高功率固体及非线性频率变换技术研究。 E-mail:zongnan@mail.ipc.ac.cn
胡蔚敏(1996—)，男，河南濮阳人，硕士研究生，2018年于中国地质大学(武汉)获得学士学位，现为中国科学院理化技术研究所光学硕士研究生，主要从事与物质的相互作用方面的研究。E-mail:huweimin18@mails.ucas.ac.cn
彭钦军(1976-)，男，四川南充人，博士，2006年于中国科学院物理研究所获得光学博士学位，现为中国科学院理化技术研究所研究员，博士生导师，主要从事物理与技术研究。 E-mail:pengqinjun@163.com

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出版历程
- 收稿日期:2019-04-11
- 修回日期:2019-05-14
- 刊出日期:2020-02-01

Research progress on laser-produced plasma light source for 13.5 nm extreme ultraviolet lithography

ZONG Nan^{1, 2, †,,},
HU Wei-min^{1, 3, †,},
WANG Zhi-min¹,
WANG Xiao-jun¹,
ZHANG Shen-jin²,
BO Yong¹,
PENG Qin-Jun^{1, 2,,},
XU Zu-yan^{1, 2}

1.
Key Lab of Solid State Lasers, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
2.
Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
3.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds:

Supported by National Key Research and Development Project of ChinaNo.2016YFB0402103

Key Technology Team Project of Chinese Academy of SciencesNo.GJJSTD20180004

National Major Research and Development Project of ChinaNo.ZDYZ2012-2

National Major Scientific Instruments and Equipment Development Project of ChinaNo.2012YQ120048

National Natural Science Foundation of ChinaNo.61535013

Fund of Technical Institute of Physics and Chemistry, Chinese Academy of SciencesNo.Y8A9021H11

More Information

Corresponding author:ZONG Nan E-mail:zongnan@mail.ipc.ac.cn;PENG Qin-JunE-mail:pengqinjun@163.com

摘要

摘要:半导体产业是高科技、信息化时代的支柱。光刻技术，作为半导体产业的核心技术之一，已成为世界各国科研人员的重点研究对象。本文综述了等离子体13.5 nm极紫外光刻的原理和国内外研究发展概况，重点介绍了其源、辐射靶材和多层膜反射镜等关键系统组成部分。同时，指出了在提高等离子体13.5 nm极紫外光源输出功率的研究进程中所存在的主要问题，包括提高转换效率和减少光源碎屑。特别分析了目前已实现百瓦级输出的日本Gigaphoton公司和荷兰的ASML公司的极紫外光源装置。最后对该项技术的发展前景进行了总结与展望。
- 13.5 nm极紫外光刻技术/
- 等离子体/
- 极紫外光源/
- 转换效率/
- 光源碎屑/
- 预脉冲
Abstract:The semiconductor industry is the backbone of the high-tech and information age. Lithography technology, one of the core technology of the semiconductor industry, has become a key research subject all around the world. This article mainly discusses the light source of 13.5 nm Extreme Ultraviolet Lithography (EUVL) by using Laser-Produced Plasma (LPP). It makes a brief introduction to the principles behind this technology and the development history of this field at home and abroad. The introductions include the materials used in the multilayer mirror, and rationale for the selection of materials, the shape and design of the target and the type of laser. At the same time, this article points out that the main problems for the EUVL are light debris reduction and the conversion efficiency improvement of EUV light.This paper also gives special analysis of the light source output devices of 13.5 nm EUVL machines produced by international famous companies——Gigaphoton of Japan and ASML of the Netherlands, which can generate more than 100 W level EUV power. Finally, this article summarizes and forecasts future research related to this technology.
- 13.5 nm Extreme Ultraviolet Lithography (13.5 nm-EUVL)/
- Laser-Produced Plasma (LPP)/
- extreme ultraviolet source/
- Conversion Efficiency (CE)/
- light debris/
- pre-pulse laser
注释:

1) †共同贡献作者

HTML全文

图 1LPP-EUV光源示意图

Figure 1.Schematic of laser-produced plasma for EUV light source

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图 2DPP-EUV光源示意图

Figure 2.Schematic of discharge-produced plasma for EUV light source

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图 3Nd：YAG (a)与CO₂ (b)等离子体能量吸收区域和极紫外辐射区域

Figure 3.Laser energy absorption regions and extreme ultraviolet radiation regions from different laser-produced plasma.(a) Nd:YAG laser and (b) CO₂laser

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图 4ASML-EUVL-NXE系列产品

Figure 4.ASML-EUVL-NXE series of products

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图 5大功率短脉冲CO₂ 器的系统示意图

Figure 5.System configuration of high power short pulsed CO₂laser

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图 6液滴发生装置示意图

Figure 6.Schematic view of the droplet generator

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表 1Gigaphoton公司EUV光源产品参数

Table 1.Specifications of Gigaphoton EUV system

		Proto#1 Proof of Concept	Proto#2 Key Technology	Pilot#1 HVM Ready
Target Performance	EUV power	25 W	>100 W	250 W
	CE	3%	4.0%	5.0%
	Pulse Rate	100 kHz	100 kHz	100 kHz
	Output Angle	Horizontal	62°upper	62°upper
	Availability	~1 week	~1 week	>75%
Technology	Droplet Generator	20~25 μm	< 20 μm	< 20 μm
	CO₂Laser	5 kW	20 kW	27 kW
	Pre-pulse Laser	Picosecond	picosecond	picosecond
	Collector Mirror Lifetime	Test platform	10 days	>3 months

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