面发射分布反馈半导体器及光栅耦合半导体器 -

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面发射分布反馈半导体器及光栅耦合半导体器

戚晓东^1,2,
叶淑娟^1,2,
张楠^1,2,
秦莉¹,
王立军¹

1.
中国科学院长春光学精密机械与物理研究所,吉林长春 130033;
2.
中国科学院研究生院,北京 100039

基金项目:

国家自然科学基金重点资助项目(No.60636020);国家自然科学基金资助项目(No.60676034,10974012);吉林省科技发展项目(No.20080335);中国科学院知识创新工程领域前沿项目和国家自然科学基金重点支持项目(No.90923037)

详细信息

作者简介:
戚晓东(1985—),男,山东临沂人,硕士研究生,主要从事新型半导体器、纳米电子学和纳米光子学方面的研究。E-mail:qi.xiaodong@queensu.ca
王立军(1946—),男,吉林舒兰人,研究员,博士生导师,主要从事大功率半导体器方面的研究。 E-mail:wanglj@ciomp.ac.cn
戚晓东(1985—),男,山东临沂人,硕士研究生,主要从事新型半导体器、纳米电子学和纳米光子学方面的研究。E-mail:qi.xiaodong@queensu.ca
王立军(1946—),男,吉林舒兰人,研究员,博士生导师,主要从事大功率半导体器方面的研究。 E-mail:wanglj@ciomp.ac.cn

中图分类号:TN248.4
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出版历程
- 收稿日期:2010-05-11
- 修回日期:2010-07-13
- 刊出日期:2010-10-25

Surface-emitting distributed-feedback semiconductor lasers and grating-coupled laser diodes

1.
Changchun Institute of Optics,Fine Machines and Physics,Chinese Academy of Sciences,Changchun 130033,China;
2.
Graduate University of Chinese Academy of Sciences,Beijing 100049,China

摘要

摘要:阐述了以曲线光栅面发射分布反馈半导体器(SEDFB)为代表的SE-DFB器件的原理和结构,讨论了它们的性能和特点并与其他类型的半导体器进行了比较。指出依靠曲线光栅特殊的衍射特性,可实现对模式的控制和二维漏模耦合阵列化出光,得到窄线宽(典型值0.08 nm)、小发散角(典型值0.5 mrad)、高亮度(单管近衍射极限3 W(CW))和大功率(单管最高73 W,列阵为kW级)的。综述了SE-DFB的发展历程、现状及未来的发展趋势,强调由于曲线光栅耦合SE-DFB 器兼具边发射和面发射器件的优势和诸多其他优秀性能,将其应用于不同材料体系,不同结构的半导体器及其阵列,制作不同波段的高功率、高光束质量的SEDFB器件会有很好的研究意义和应用前景。
- 面发射分布反馈半导体器/
- 高功率高亮度器/
- 列阵/
- 光栅耦合器件/
- 金属光栅
Abstract:The principles and structures of Surface-emitting Distributed-feedback Bragg(SE-DFB) semiconductor lasers, especially curved-grating coupled SE-DFB lasers, are described, then, their characteristics are discussed and compared with that of other semiconductors. It points out that the SE-DFB lasers based on special diffractive characteristics of curved grating can achieve the mode control and two-dimensional leaky-mode coupling of laser arrays, and can obtain the laser with narrow line width(typically 0.08 nm), small divergence angle(typically 0.5 mrad), high brightness(3 W(CW) near-diffraction limit emitting from a single device) and high power(73 W maximum in a single device and kW level in arrays). After reviewing the development, present status and new opportunities in future of the SE-DFB devices, it emphasizes that as the curved-grating coupled SE-DFB has both strengths from side emitting and surface emitting devices, it will have great research significance and wide application prospect by introducing into semiconductor lasers and arrays with different material systems and structures.
- Surface-emitting Distributed-feedback-Bragg(SE-DFB) semiconductor laser/
- high-power & high-brightness laser/
- laser array/
- grating-coupled device/
- metal grating

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参考文献 (1)

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