悬空氧化铟纳米线晶体管制备与光电性能表征

姜亦杨; 陈艳; 王旭东; 赵东洋; 林铁; 沈宏; 孟祥建; 汪琳; 王建禄

doi:10.37188/CO.2020-0062

Volume 14 Issue 1

Jan. 2021

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Article Contents

Chinese Optics > 2021 > 14(1): 196-205.

JIANG Yi-yang, CHEN Yan, WANG Xu-dong, ZHAO Dong-yang, LIN Tie, SHEN Hong, MENG Xiang-jian, WANG Lin, WANG Jian-lu. Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors[J]. Chinese Optics, 2021, 14(1): 196-205. doi: 10.37188/CO.2020-0062

Citation:

JIANG Yi-yang, CHEN Yan, WANG Xu-dong, ZHAO Dong-yang, LIN Tie, SHEN Hong, MENG Xiang-jian, WANG Lin, WANG Jian-lu. Fabrication and optoelectronic characterization of suspended In₂O₃ nanowire transistors[J]. Chinese Optics, 2021, 14(1): 196-205. doi: 10.37188/CO.2020-0062

Citation:

JIANG Yi-yang, CHEN Yan, WANG Xu-dong, ZHAO Dong-yang, LIN Tie, SHEN Hong, MENG Xiang-jian, WANG Lin, WANG Jian-lu. Fabrication and optoelectronic characterization of suspended In₂O₃ nanowire transistors[J]. Chinese Optics, 2021, 14(1): 196-205. doi: 10.37188/CO.2020-0062

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Fabrication and optoelectronic characterization of suspended In₂O₃ nanowire transistors

doi: 10.37188/CO.2020-0062

1.
School of Materials Science & Engineering, Shanghai University, Shanghai 200444, China
2.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Funds: Supported by National Natural Science Foundation of China (No. 61521001, No. 61574151); Program on Key Basic Research Project (No. 2016YFA0203900, No. 2016YFB0400801); Program of the Chinese Academy of Science (No. QYZDB-SSW-JCS016, No. QYZDY-SSW-JSC042)

More Information

Author Bio:
JIANG Yi-yang (1995—), Master, School of Materials Science & Engineering, Shanghai University. His place of birth is Yangzhou, Jiangsu. His research interests are on nanowire-based photodetectors. E-mail: Jiangyiyang95@163.com

CHEN Yan (1991—), Dr, Shanghai Institute of Technical Physics, Microelectronics and Solid-state Electronics, Chinese Academy of Sciences. Place of birth is Nantong, Jiangsu. Her research interests are on optoelectronics based on low-dimensional materials and their heterostructures. E-mail: cherry16@mail.sitp.ac.cn

WANG Jian-lu (1981—), Dr, Professor, Shanghai Institute of Technical Physics, Microelectronics and Solid-state Electronics, Chinese Academy of Sciences. His place of birth is Pingyao, Shanxi. His research interests currently focus on ferroelectrics, 2D materials and their related electronic and optoelectronic devices. E-mail: jlwang@sitp.ac.cn
Corresponding author: cherry16@mail.sitp.ac.cn; jlwang@sitp.ac.cn
Received Date: 14 Apr 2020
Rev Recd Date: 03 May 2020

Available Online: 29 Dec 2020

Publish Date: 25 Jan 2021

Abstract

Abstract

One-dimensional (1D) semiconductor nanowires have shown outstanding performance in nano-electronics and nano-photonics. However, the electrical properties of the nanowire transistors are very sensitive to interactions between the nanowires and substrates. Optimizing the device structure can improve the electrical and photodetection performance of nanowire transistors. We report a suspended In₂O₃ nanowire transistor fabricated by one-step lithography, showing a high mobility of 54.6 cm²V⁻¹s⁻¹ and a low subthreshold swing of 241.5 mVdec⁻¹. As an ultraviolet photodetector, the phototransistor shows an extremely low dark current (~10⁻¹³ A) and a high responsivity of 1.6×10⁵ A•W⁻¹. This simple and effective method of suspending the channel material of a transistor can be widely used in manufacturing high-performance micro-nano devices.
- nanowire,
- In₂O₃,
- suspension device,
- UV photodetector

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References(31)

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