Jan. 2021

Article Contents

Chinese Optics> 2021> 14(1): 206-212.

TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J]. Chinese Optics, 2021, 14(1): 206-212. doi: 10.37188/CO.2020-0153

Citation:

TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J].Chinese Optics, 2021, 14(1): 206-212.doi:10.37188/CO.2020-0153

Citation:

TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J].Chinese Optics, 2021, 14(1): 206-212.doi:10.37188/CO.2020-0153

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Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed

doi:10.37188/CO.2020-0153

TIAN Hui-jun^{1, 2,},
LIU Qiao-li²,
YUE Heng²,
HU An-qi^2,,,
GUO Xia^2,,

1.
Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
2.
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds:Supported by the National Key Research and Development Program of China (No. 2017YFF0104801); National Natural Science Foundation of China (No. 61804012)

More Information

Author Bio:
TIAN Hui-jun (1984—), PhD student, Institute of Laser Engineering, Beijing University of Technology, China. His research interests focus on graphene-based photodetectors. E-mail:tianhj@emails.bjut.edu.cn
GUO Xia (1974—), Professor, School of Electronic Engineering, Beijing University of Posts and Telecommunications, China. Her research interests are on high-response PIN diodes, high speed VCSELs and ultrahigh-sensitive photodetectors in Graphene. E-mail:guox@bupt.edu.cn
Corresponding author:anqihu@bupt.edu.cn;guox@bupt.edu.cn
Received Date:01 Sep 2020
Rev Recd Date:14 Sep 2020

Available Online:07 Dec 2020

Publish Date:25 Jan 2021

Abstract

Abstract

Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity ( D ^*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/ fnoise. In this paper, D ^*of ~1.82×10 ¹¹Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D ^*was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed.
- graphene,
- photodiode,
- specific detectivity,
- response speed

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References (24)

References

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