Volume 6Issue 1
Feb. 2013
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DOU Yin-ping, SUN Chang-kai, LIN Jing-quan. Laser-produced plasma light source for extreme ultraviolet lithography[J]. Chinese Optics, 2013, 6(1): 20-33. doi: 10.3788/CO.20130601.0020
Citation: DOU Yin-ping, SUN Chang-kai, LIN Jing-quan. Laser-produced plasma light source for extreme ultraviolet lithography[J].Chinese Optics, 2013, 6(1): 20-33.doi:10.3788/CO.20130601.0020

Laser-produced plasma light source for extreme ultraviolet lithography

doi:10.3788/CO.20130601.0020
  • Received Date:11 Oct 2012
  • Rev Recd Date:13 Dec 2012
  • Publish Date:10 Feb 2013
  • Laser-produced Plasma(LPP) Extreme Ultraviolet Lithography(EUVL) light source, one of the core technologies of next generation lithography, is discussed. A brief review to the development situation of lithography technology in Europe, America and Japan is given. Being a newly arisen research direction, the status of next generation 13.5 nm EUVL source is analyzed, and especially the research on EUVL source based upon LPP at home and abroad is described and analyzed in detail. It points out that the main problems for the EUVL are how to improve the conversion efficiency of EUV light and how to reduce the light debris. Furthermore, the latest research status on the EUVL source at 6.7 nm is also presented. Finally, it introduces the research work of the author's group on EUVL light sources and the detection of mask defect for EUVL.

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