Feb. 2013

Article Contents

Chinese Optics> 2013> 6(1): 96-102.

WANG Ming, WANG Ting-feng, SHAO Jun-feng. Analysis of femtosecond laser induced damage to array CCD camera[J]. Chinese Optics, 2013, 6(1): 96-102. doi: 10.3788/CO.20130601.0096

Citation:

WANG Ming, WANG Ting-feng, SHAO Jun-feng. Analysis of femtosecond laser induced damage to array CCD camera[J].Chinese Optics, 2013, 6(1): 96-102.doi:10.3788/CO.20130601.0096

WANG Ming, WANG Ting-feng, SHAO Jun-feng. Analysis of femtosecond laser induced damage to array CCD camera[J]. Chinese Optics, 2013, 6(1): 96-102. doi: 10.3788/CO.20130601.0096

Citation:

WANG Ming, WANG Ting-feng, SHAO Jun-feng. Analysis of femtosecond laser induced damage to array CCD camera[J].Chinese Optics, 2013, 6(1): 96-102.doi:10.3788/CO.20130601.0096

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Analysis of femtosecond laser induced damage to array CCD camera

doi:10.3788/CO.20130601.0096

1.
State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Received Date:15 Sep 2012
Rev Recd Date:13 Nov 2012
Publish Date:10 Feb 2013

Abstract

Abstract

The disturbing and damage effects of a femtosecond laser on the CCD camera were researched. A laser pulse with a wavelength of 800 nm, pulse width of 100 fs and a single pulse energy of 500 J was used to radiate an interline CCD solid-state image sensor and the damage threshold was measured in the experiment. The phenomenon of the point damage, line damage and the whole target surface damage were observed while increasing the energy of reaching CCD target surface, and the corresponding damage thresholds were 151.2 mJ/cm2, 508.2 mJ/cm2 and 5.91 J/cm2, respectively. In the different damage situations of the CCD, the resistance values between the clock signal lines, and between the clock signal line and the ground were measured. By contrasting the resistance values of the CCD before and after the damage, it was found that the resistance values between the vertical transfer clock signal lines decreased significantly, and the same results were achieved between the vertical transfer clock signal line and the ground. At last, the damage position and the damage mechanism were discussed.
- femtosecond pulse laser,
- laser damage,
- damage threshold,
- CCD camera,
- damaging mechanism

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References

[1] ZHANG C Z,BLARRE L D,WALSER R M, et al.. Mechanism for laser-induced functional damage to silicon charge-coupled imaging sensors[J]. Appl. Opt.,1993,32(27):5201-5210. [2] 钟海荣,陆启生,文铁峰,等. 辐射CCD的破坏机理分析[J]. 强与粒子束,1988,10(4):537-542. ZHONG H R,LU Q SH,WEN T F, et al.. Review on the laser-induced damagemechanism of CCD detector[J]. High Power Laser and Particle Beams,1988,10(4):537-542.(in Chinese) [3] 倪晓武,陆建,贺安之. 对CCD器件破坏时几种阈值的测量[J]. 技术,1994,18(3):153-156. NI X W,LU J,HE A ZH. Measurement of laser damaging thresholds of CCD devices[J]. Laser Technology,1994,18(3):153-156.(in Chinese) [4] 钟海荣,刘天华,陆启生. 对光电探测器的破坏机理研究综述[J]. 强与粒子束,2000,12(4):423-428. ZHONG H R,LIU T H,LU Q SH. Review on the laser-include damage mechanism study of photoelectric detector[J]. High Power Laser and Particle Beams,2000,12(4):423-428.(in Chinese) [5] 江继军,罗福,陈建国. CCD在fs 辐照下的损伤研究[J]. 强与粒子束,2005,17(4):515-517. JIANG J J,LUO F,CHEN J G. Research on femtosecond laser induced damage to CCD[J]. High Power Laser and Particle Beams,2005,17(4):515-517.(in Chinese) [6] 郭少锋,程湘爱,傅喜泉,等. 高重复频率飞秒对面阵CCD的干扰和破坏[J]. 强与粒子束,2007,19(11):1783-1786. GUO SH F,CHENG X A,FU X Q, et al.. Failure of array CCD irradiated by high-repetitive femto-second laser[J]. High Power Laser and Particle Beams,2007,19(11):1783-1786.(in Chinese) [7] 黄绍艳,张永生,唐本奇,等. 500 fs超短脉冲对CCD探测器的破坏效应[J]. 强与粒子束,2005,17(10):1145-1148. HUANG SH Y,ZHANG Y SH,TANG B Q, et al.. Damage effect on CCD detector irradiated by 500 fs laser pulse[J]. High Power Laser and Particle Beams,2005,17(10):1145-1148.(in Chinese) [8] 姜楠,张雏,牛燕雄,等. 脉冲辐照CCD探测器的硬破坏效应数值模拟研究[J]. 与红外,2008,38(10):1004-1007. JIANG N,ZHANG CH,NIU Y X, et al.. Numerical simulation of pulsed laser induced damage on CCD arrays[J]. Laser Infrared,2008,38(10):1004-1007.(in Chinese) [9] TIEN A C. Ultrafast electron dynamics in femtosecond laser dielectric breakdown[D].Ann Arbor:University of Michigan,1999. [10] 蔡跃,叶锡生,马志亮,等. 170 ps 脉冲辐照可见光面阵Si-CCD的实验[J]. 光学精密工程,2011,19(2):457-462. CAI Y,YE X SH,MA ZH L, et al.. Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD[J]. Opt. Precision Eng.,2011,19(2):457-462.(in Chinese) [11] 李文煜,王金宝,程湘爱,等. 对面阵CCD器件破坏的一种新机理[J]. 强与粒子束,2005,17(10):1457-1460. LI W Y,WANG J B,CHENG X A, et al.. New analysis on laser-induced damage mechanism of array CCD device[J]. High Power Laser and Particle Beams,2005,17(10):1457-1460.(in Chinese) [12] 沈红斌,沈学举,周冰,等. 532 nm脉冲辐照CCD实验研究[J]. 强与粒子束,2009,21(10):1449-1454. SHEN H B,SHEN X J,ZHOU B, et al.. Experimental study of 532 nm pulsed laser irradiating CCD[J]. High Power Laser and Particle Beams,2009,21(10):1449-1454.(in Chinese)

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