Volume 1Issue 1
Dec. 2008
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ZHANG Ji-ying, JIANG Da-yong, JU Zhen-gang, SHEN De-zhen, YAO Bin, FAN Xi-wu. MgxZn1-xO thin film and UV detector for solar blind wavelength[J]. Chinese Optics, 2008, 1(1): 80-84.
Citation: ZHANG Ji-ying, JIANG Da-yong, JU Zhen-gang, SHEN De-zhen, YAO Bin, FAN Xi-wu. MgxZn1-xO thin film and UV detector for solar blind wavelength[J].Chinese Optics, 2008, 1(1): 80-84.

MgxZn1-xO thin film and UV detector for solar blind wavelength

  • Received Date:11 Aug 2008
  • Rev Recd Date:15 Sep 2008
  • Publish Date:01 Dec 2008
  • MgxZn1-xO is a promising material for developing solarblind ultraviolet(UV) photodetectors. However, the control of the MgZnO quality and the phase separation with increase of Mg in MgxZn1-xOO alloy is still a difficult problem. Up to now, no reports that the cutoff wavelength is at 273 nm have been found for the photodetectors based on MgZnO films. In this paper, cubic MgxZn1-xOO thin films are grown on quartz and sapphire substrates by Radio Frequency(RF) magnetron sputtering and Metal Organic Chemical Vapour Deposition(MOCVD). The MetalSemiconductorMetal(MSM) structured MgZnO photodetectors are fabricated based on the films. Results from spectral analysis shows that the photodetector exhibits a peak response wavelength at 225 nm with a cutoff wavelength of 230 nm, and the cubic phase MgZnO alloy with 255 nm absorption edge is finished by LPMOCVD and the MSM devices exhibit the peak energy at 250 nm with cutoff wavelength of 273 nm, which lies in the solarblind spectrum range(220~280 nm).

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      沈阳化工大学材料科学与工程学院 沈阳 110142

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